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ESCT P/N:
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OEM:
The 1D10-350647-21 (RING, F-8SO-SI-260-3.4A (325-22.5)) is a high-precision silicon focus ring used within Tokyo Electron plasma etch systems, designed to control plasma distribution at the wafer edge and maintain uniform processing conditions across the substrate.
Installed around the wafer on the electrostatic chuck (ESC), this focus ring shapes the electric field and plasma sheath at the wafer perimeter. Its geometry, thickness (3.4A profile), and silicon material composition are optimised for specific process conditions, enabling consistent etch or deposition performance while protecting surrounding chamber components from plasma exposure.
The 1D10-350647-21 focus ring functions as a critical plasma-facing consumable.
Core functions include:
It operates alongside ESCs, electrodes, insert rings, and chamber hardware assemblies.
The focus ring is central to wafer edge performance.
Key characteristics include:
Dimensional accuracy is critical for process tuning.
Performance features include:
The ring is exposed to aggressive plasma conditions.
Durability features include:
The 1D10-350647-21 focus ring directly affects process consistency and yield.
Potential impacts of wear or degradation include:
Replacing a worn focus ring restores plasma uniformity and process control.
Continuous plasma exposure alters ring dimensions.
Indicators include:
Material wear introduces contamination.
Symptoms include:
Worn rings affect wafer edge conditions.
Indicators include:
For best performance:
The 1D10-350647-21 (F-8SO-SI-260-3.4A (325-22.5)) is a Tokyo Electron OEM focus ring.
Key considerations:
It defines the ring type (focus ring), silicon material, geometry class, thickness profile (3.4A), and additional dimensional parameters used for process tuning and plasma control.
It shapes the electric field at the wafer edge, controlling plasma density and holding processing uniform across the wafer.
Thickness directly affects plasma sheath formation. Small deviations can markedly impact edge uniformity and process results.
Edge non-uniformity, increased particle counts, visible erosion, and process drift.
Yes, but it reduces process stability and increases risk of yield loss.
It introduces edge defects, reduces usable wafer area, and increases process variability.
Yes. ESCT verifies high-purity material, dimensional accuracy, and compatibility aligned with OEM requirements.
Incorrect geometry alters plasma distribution, leading to non-uniform processing and potential yield loss.
Based on process conditions, plasma intensity, and PM schedules. Monitoring performance trends is key.
Yes. It acts as a sacrificial barrier, reducing wear on more expensive chamber components.
The 1D10-350647-21 silicon focus ring (F-8SO-SI-260-3.4A (325-22.5)) is a mission-critical plasma-facing consumable within Tokyo Electron systems, controlling wafer edge plasma behaviour and holding process uniformity. Its geometry and material properties directly impact yield, process stability, and tool uptime.
Sourcing through ESCT Fab Support gives you verified material quality, precise dimensional accuracy, and faster availability, helping maintain consistent process control and high-performance semiconductor manufacturing.
Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 1D10-350647-21. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.
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