RING,F-8SO-SI-260-3.4A(325-22.5)

PART DETAILS

1D10-350647-21
RING,F-8SO-SI-260-3.4A(325-22.5)

OEM P/N: 

1D10-350647-21

ESCT P/N: 

ES7099-218

PART TYPE:

2nd Source NEW

OEM: 

TEL
MORE INFO

1D10-350647-21 Silicon focus ring for Tokyo Electron systems

Precision silicon focus ring for plasma edge control and uniformity, Tokyo Electron platforms, 1D10-350647-21

The 1D10-350647-21 (RING, F-8SO-SI-260-3.4A (325-22.5)) is a high-precision silicon focus ring used within Tokyo Electron plasma etch systems, designed to control plasma distribution at the wafer edge and maintain uniform processing conditions across the substrate.

Installed around the wafer on the electrostatic chuck (ESC), this focus ring shapes the electric field and plasma sheath at the wafer perimeter. Its geometry, thickness (3.4A profile), and silicon material composition are optimised for specific process conditions, enabling consistent etch or deposition performance while protecting surrounding chamber components from plasma exposure.

Functional role within Tokyo Electron systems

The 1D10-350647-21 focus ring functions as a critical plasma-facing consumable.

Core functions include:

  • Controlling plasma density and electric field at the wafer edge
  • Holding etch or deposition uniform across the wafer surface
  • Minimising edge exclusion and process non-uniformity
  • Acting as a sacrificial component to protect chamber hardware
  • Supporting stable and repeatable process conditions

It operates alongside ESCs, electrodes, insert rings, and chamber hardware assemblies.

Design and performance characteristics

Edge plasma control and uniformity

The focus ring is central to wafer edge performance.

Key characteristics include:

  • Optimised geometry for consistent plasma distribution
  • Reduced edge effects and improved uniformity
  • Stable plasma behaviour across process cycles
  • Tighter control for advanced process nodes

Geometry and profile specification (F-8SO-SI-260-3.4A (325-22.5))

Dimensional accuracy is critical for process tuning.

Performance features include:

  • Silicon-based focus ring (SI) for process compatibility
  • 260-class geometry for defined wafer/chamber configurations
  • 3.4A thickness profile controlling plasma sheath behaviour
  • Additional geometry parameters (325-22.5) influencing edge field shaping
  • Tight tolerances that give repeatable performance

Material compatibility and plasma resistance

The ring is exposed to aggressive plasma conditions.

Durability features include:

  • High-purity silicon for minimal contamination risk
  • Controlled erosion characteristics under plasma exposure
  • Compatibility with reactive etch chemistries
  • Low particle generation performance

Impact on process performance, yield, and tool uptime

The 1D10-350647-21 focus ring directly affects process consistency and yield.

Potential impacts of wear or degradation include:

  • Edge non-uniformity in etch or deposition
  • Increased wafer edge defects
  • Reduced usable wafer area
  • Process drift and variability
  • Increased particle generation
  • Reduced process window margins
  • Increased maintenance frequency

Replacing a worn focus ring restores plasma uniformity and process control.

Common failure modes and diagnostic indicators

Plasma erosion and geometry change

Continuous plasma exposure alters ring dimensions.

Indicators include:

  • Surface erosion or rounding
  • Reduction in thickness (profile drift)
  • Changes in plasma behaviour
  • Increased edge process variability

Particle generation and surface degradation

Material wear introduces contamination.

Symptoms include:

  • Increased particle counts
  • Surface roughening or flaking
  • Yield-impacting defects
  • Chamber contamination

Edge process degradation

Worn rings affect wafer edge conditions.

Indicators include:

  • Increased edge exclusion
  • Non-uniform processing near wafer perimeter
  • Increased wafer-to-wafer variability

Installation and maintenance best practices

For best performance:

  • Handle using strict cleanroom protocols
  • Inspect for erosion, cracks, or contamination before installation
  • Replace based on wear thresholds or PM schedules
  • Check seating and alignment on ESC
  • Perform chamber seasoning and qualification after replacement
  • Monitor edge uniformity and particle trends

OEM part number and compatibility

The 1D10-350647-21 (F-8SO-SI-260-3.4A (325-22.5)) is a Tokyo Electron OEM focus ring.

Key considerations:

  • Must match chamber geometry and process requirements
  • Thickness and profile are critical for plasma behaviour
  • Compatibility depends on tool type and process recipe
  • Always verify OEM specifications before replacement

Why source from ESCT Fab Support

ESCT advantages

  • OEM-aligned material purity and dimensional verification
  • Cleanroom-compliant handling and packaging
  • Verified compatibility with Tokyo Electron systems
  • Faster availability vs OEM lead times
  • Reduced Mean Time To Repair (MTTR)
  • Expertise in plasma-facing consumables

Frequently asked questions

1. What does “F-8SO-SI-260-3.4A (325-22.5)” mean?

It defines the ring type (focus ring), silicon material, geometry class, thickness profile (3.4A), and additional dimensional parameters used for process tuning and plasma control.

2. How does this focus ring affect plasma behaviour?

It shapes the electric field at the wafer edge, controlling plasma density and holding processing uniform across the wafer.

3. Why is thickness (3.4A) critical?

Thickness directly affects plasma sheath formation. Small deviations can markedly impact edge uniformity and process results.

4. What are early signs of focus ring wear?

Edge non-uniformity, increased particle counts, visible erosion, and process drift.

5. Can a worn focus ring still be used temporarily?

Yes, but it reduces process stability and increases risk of yield loss.

6. How does focus ring wear impact yield?

It introduces edge defects, reduces usable wafer area, and increases process variability.

7. Can ESCT match OEM silicon specifications?

Yes. ESCT verifies high-purity material, dimensional accuracy, and compatibility aligned with OEM requirements.

8. What happens if the wrong ring profile is used?

Incorrect geometry alters plasma distribution, leading to non-uniform processing and potential yield loss.

9. How often should focus rings be replaced?

Based on process conditions, plasma intensity, and PM schedules. Monitoring performance trends is key.

10. Does this component protect other chamber parts?

Yes. It acts as a sacrificial barrier, reducing wear on more expensive chamber components.

Summary

The 1D10-350647-21 silicon focus ring (F-8SO-SI-260-3.4A (325-22.5)) is a mission-critical plasma-facing consumable within Tokyo Electron systems, controlling wafer edge plasma behaviour and holding process uniformity. Its geometry and material properties directly impact yield, process stability, and tool uptime.

Sourcing through ESCT Fab Support gives you verified material quality, precise dimensional accuracy, and faster availability, helping maintain consistent process control and high-performance semiconductor manufacturing.

Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 1D10-350647-21. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.

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