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The Focus Ring N is a plasma-facing consumable that encircles the 300 mm wafer inside a Tokyo Electron (TEL) plasma etch process chamber. Seated on the lower electrode (cathode) assembly directly outboard of the electrostatic chuck, it extends the conductive and dielectric environment of the wafer surface beyond the wafer edge so that the plasma sheath does not collapse or distort at the substrate perimeter. In doing so, the ring transforms what would otherwise be a sharp electrical and geometric discontinuity at the wafer edge into a smooth, controlled transition that the etch front can cross without losing uniformity.
The “N” designation and the MTBWC250 reference identify this as a specific ring variant within the TEL focus ring family, distinguished by its profile, inner and outer diameters, step geometry and material grade so that it matches a particular chamber configuration and process recipe set. Because it sits at the highest-flux, highest-bias region of the chamber, the Focus Ring N is a scheduled wear item: it is consumed gradually by ion bombardment over thousands of RF hours and is replaced on a defined preventive-maintenance interval rather than run to failure.
As supplied by ESCT Fab Support under part number ES7099-170, this Focus Ring N is a 2nd-source, new component manufactured to the form, fit and function of the TEL original (OEM P/N 1D10-350680-11), giving fabs a dimensionally and materially equivalent replacement without the cost and lead-time penalty of sole-source OEM procurement.
In a TEL 300 mm etch chamber the focus ring performs several interlocking electrical, geometric and thermal functions that together govern how the etch behaves at the outermost few millimetres of the wafer, the region that disproportionately determines edge-die yield. Its core responsibilities include:
Focus rings of this class are produced from process-matched materials (typically high-purity silicon, silicon carbide or, in some recipes, quartz) chosen so that the ring erodes predictably and contributes only species already present in the chemistry. A silicon-based ring, for example, is electrically similar to the wafer and consumes itself into the same fluorine or chlorine chemistries without introducing foreign metals.
The ring’s value lies almost entirely in its geometry. Inner diameter, step height relative to the wafer surface, outer diameter and flatness must reproduce the OEM profile closely, because even small deviations shift the sheath at the wafer edge and change edge CD and tilt. ES7099-170 is manufactured to the original MTBWC250 / 1D10-350680-11 dimensional envelope.
Because the focus ring governs the electrical and thermal environment of the wafer edge, its condition is one of the strongest single drivers of edge-die yield on a TEL etcher. As the ring erodes, the sheath geometry it once held in place gradually changes, and the etch result drifts in ways that are felt first at the wafer perimeter:
The dominant wear mode is steady erosion from ion bombardment, which thins the ring and lowers its top surface over time. As the step height falls below specification the wafer-edge sheath sags, edge etch rate and CD shift, and the ring reaches the end of its useful life, the point at which it must be replaced to restore baseline edge performance.
Brittle silicon and ceramic rings are vulnerable to cracking from thermal cycling, mechanical handling shock, or uneven seating on the cathode. A cracked ring can shed particles onto the wafer, disturb RF coupling and, in severe cases, fragment within the chamber, forcing an unplanned wet-clean and re-qualification.
Process by-products and polymer deposit on and around the ring during etch. As these layers thicken and the ring surface roughens late in its life, adhesion fails and flakes are released as particles, driving up edge defectivity well before the ring is fully eroded.
Focus ring replacement is a routine preventive-maintenance task, but because the part is brittle, contamination-sensitive and geometry-critical, it must be handled with care and to the tool owner’s documented procedure. The general sequence is:
Focus rings are high-frequency consumables, so their availability and consistency directly affect tool uptime and cost of ownership. Sourcing ES7099-170 from ESCT Fab Support gives fabs a dependable second-source channel for this TEL ring variant:
It surrounds the 300 mm wafer on the lower electrode and extends the electrical and geometric surface beyond the wafer edge, keeping the plasma sheath flat at the perimeter. This controls ion-incidence angle, edge CD and uniformity, and protects the chuck, making it central to edge-die yield.
No. ES7099-170 is a new, second-source component supplied as an OEM-compatible equivalent, built to match the form, fit and function of TEL OEM P/N 1D10-350680-11. It is not an original OEM part and is not sold as one; it is a compatible replacement for the same application.
Rings are normally replaced on an RF-hour-based PM interval before performance drifts. Signs that the limit has been reached include rising edge CD non-uniformity, feature tilt at the wafer rim, increasing particle counts and visible erosion or height loss measured during inspection.
Focus rings of this type are made from process-matched materials such as high-purity silicon, silicon carbide or quartz, selected so the ring erodes predictably and adds no foreign contamination. ES7099-170 is produced to the material grade and properties appropriate to this TEL variant.
Yes. As with any plasma-facing consumable, a freshly installed ring should be conditioned with a season or burn-in recipe and verified with chamber-matching and qualification wafers to confirm edge CD and uniformity before the chamber returns to production.
The planned lead time is 4–5 weeks. Because focus rings are consumed on a regular cycle, we recommend forecasting usage against PM intervals and holding buffer stock so that a worn or cracked ring never becomes an unplanned tool-down event.
The Focus Ring N (OEM P/N 1D10-350680-11, MTBWC250) is a geometry- and material-critical consumable that shapes the plasma sheath at the wafer edge in TEL 300 mm plasma etch chambers, directly governing edge CD, profile control, particle performance and edge-die yield. It is a scheduled wear item that erodes predictably and is replaced on a defined PM interval. ESCT Fab Support supplies it as ES7099-170, a new second-source equivalent manufactured to OEM form, fit and function, with a 4–5 week lead time, giving fabs a cost-effective and reliable alternative for this high-turnover ring.
Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 1D10-350680-11. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.
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