HYNIX TEL Focus Ring 360-302-T4 TAP

PART DETAILS

3D10-250369-11
HYNIX TEL Focus Ring 360-302-T4 TAP

OEM P/N: 

3D10-250369-11

ESCT P/N: 

ES7099-031

PART TYPE:

2nd Source NEW

OEM: 

TEL
MORE INFO

TEL focus ring 360-302-T4 (OEM P/N 3D10-250369-11), edge-confinement consumable for TEL 300 mm plasma etch systems

ESCT P/N ES7099-031, 2nd source, new, form-fit-function equivalent focus ring for Tokyo Electron etch chambers

The TEL Focus Ring 360-302-T4 is a circular plasma-confinement consumable that sits in the immediate periphery of the 300 mm wafer inside a Tokyo Electron capacitively coupled plasma etch chamber. It is one of a family of edge-zone parts (focus rings, cover rings, insulator rings and the silicon cathode beneath them) that together define the electrical and physical boundary of the active wafer area. The “TAP” reference in the part name and the discrete 360-302-T4 trim designation identify a specific dimensional and tapping variant within that ring set, typically associated with a defined chamber generation and the fab fleet (here annotated for a HYNIX-configured tool) that the ring was qualified against.

In service, the focus ring encircles the wafer edge and extends the plasma sheath outward so that the electric field lines, and therefore the ion trajectories, remain vertical right out to the last few millimetres of usable silicon. Without that extension, the sheath would curve inward at the wafer perimeter, ions would arrive at an angle, and the etch profile at the edge would tilt and lose critical-dimension control. The ring is therefore not a passive spacer: it is an active part of the RF circuit and the etch-rate budget for every device die near the wafer boundary.

Because the focus ring is sacrificial, it is etched and sputtered alongside the wafer, it is among the most frequently replaced parts in a TEL etch chamber. Its dimensions, resistivity and surface condition drift continuously with plasma exposure, so a known-good, correctly profiled replacement ring is fundamental to holding edge yield and to predictable preventive-maintenance scheduling.

Functional role of the focus ring in TEL etch platforms

Within a TEL 300 mm plasma etch chamber, the 360-302-T4 focus ring performs several overlapping electrical, physical and thermal duties that all converge on one outcome, a uniform, vertical etch from wafer centre to extreme edge.

  • Extends the plasma sheath beyond the physical wafer edge so ion trajectories stay perpendicular across the outermost dies.
  • Shapes and confines the electric field at the wafer perimeter, suppressing the sheath curvature that causes edge tilt and CD roll-off.
  • Provides a controlled RF return and impedance path at the edge, contributing to the chamber’s overall RF coupling and matching behaviour.
  • Acts as a sacrificial surface that absorbs ion bombardment and erosion in place of the chamber hardware around the wafer.
  • Sets the thermal and physical boundary at the wafer edge, influencing edge temperature and local by-product residence.
  • Maintains a repeatable geometric datum so that edge etch behaviour is consistent from one ring change to the next.

Material and process performance

Focus rings of this class are produced from plasma-grade consumable materials, most commonly high-purity silicon, but also silicon carbide or quartz depending on chemistry and ring position, chosen so that any material that is sputtered from the ring is compatible with the process and does not contaminate the wafer. The 360-302-T4 is supplied as a 2nd source, new component manufactured to match the OEM ring’s material grade, resistivity band and machined profile.

Material purity and plasma resistance

The bulk material and surface finish govern how the ring erodes under fluorine, chlorine or bromine-based chemistries and how cleanly it does so. Tight control of purity and grain structure keeps erosion even, minimises particle shedding and leaves the ring contributing no unwanted metallic or organic contamination to the wafer edge.

  • Plasma-grade purity to avoid trace-metal transfer to the wafer edge.
  • Controlled resistivity so RF coupling matches the original ring’s electrical behaviour.
  • Uniform microstructure for predictable, even erosion across the ring circumference.
  • Low particle-generation tendency under sustained ion bombardment.

Dimensional and profile accuracy

The ring’s inner diameter, step height, taper and seating face are machined to the OEM profile so the gap to the wafer edge and the sheath geometry are reproduced exactly. The tapping and trim features denoted by the 360-302-T4 / “TAP” designation must match the chamber’s mounting and grounding arrangement for the ring to sit flat and ground correctly.

  • Inner-diameter and step geometry held to the OEM gap specification at the wafer edge.
  • Flat, burr-free seating face for repeatable contact and grounding.
  • Taper and top-surface profile matched to preserve sheath shaping.
  • Concentricity and thickness control to maintain azimuthal etch uniformity.

Impact on tool performance and yield

Because the focus ring governs the etch environment for the outermost ring of dies, its condition translates directly into edge yield, fleet matching and chamber availability. A worn, mismatched or contaminating ring shows up quickly in metrology and in scrapped product at the wafer perimeter.

  • Edge critical-dimension and profile control, directly affecting yield on perimeter dies.
  • Centre-to-edge etch-rate uniformity across the full 300 mm wafer.
  • Chamber-to-chamber and tool-to-tool matching across the etch fleet.
  • Particle performance and defect counts at the wafer edge.
  • Preventive-maintenance interval length and overall chamber uptime.
  • Stability of RF matching and reflected-power behaviour as the ring ages.

Common wear and failure modes

Erosion and step-height loss

The dominant wear mode is gradual erosion of the top surface and inner step by ion bombardment. As the step height drops, the sheath profile at the wafer edge changes, edge etch rate and tilt drift, and the ring eventually falls outside the process window, defining its replacement life.

Particle generation and flaking

Late in life, accumulated polymer deposits, micro-cracking or uneven erosion can cause the ring surface to shed particles. These land on the wafer edge as defects, so rising edge particle counts are a classic signal that the ring is due for change.

Cracking, arcing and seating faults

Thermal-mechanical stress, mishandling or a poor seat can crack the ring or open its grounding contact. A compromised ground or a gap under the ring can provoke localised arcing, which damages the ring, disturbs the plasma and risks the wafer and adjacent hardware.

Installation and replacement guidance

Focus-ring replacement is a routine but precision PM task. Follow the chamber’s documented procedure and observe contamination controls throughout; the steps below summarise good practice for a TEL etch chamber.

  • Vent the chamber, confirm RF and gas are isolated and the cathode has cooled to a safe handling temperature.
  • Wear clean-room gloves and use clean tools; handle the ring only by its edges to avoid contaminating the active surfaces.
  • Remove any cover or insulator ring as required, then lift out the worn focus ring and inspect the seating area.
  • Clean the seat and grounding surfaces; confirm they are flat, undamaged and free of polymer build-up and particles.
  • Verify the new 360-302-T4 ring against the existing part for diameter, step, taper and tapping/orientation before fitting.
  • Seat the new ring flat and concentric, with full contact at the grounding face and no rock or gap.
  • Reassemble, pump down, leak-check, then run season/conditioning and a CD/uniformity qualification before returning to production.

Spare parts strategy for TEL etch consumables

Focus rings are high-turnover consumables, so a dependable, qualified second-source supply protects both your edge-yield budget and your maintenance schedule. ESCT Fab Support stocks and sources TEL etch-chamber consumables as form-fit-function equivalents, giving fabs a practical alternative to single-source OEM procurement.

  • Second-source, new parts manufactured to match OEM material grade, profile and electrical behaviour.
  • Verified to form, fit and function so they drop into existing TEL chambers without process surprises.
  • A cost-effective alternative to sole-source OEM pricing on a frequently replaced consumable.
  • Cross-referenced by OEM and ESCT part numbers to simplify ordering and stock control.
  • Supports consignment and planned-buy approaches to keep critical rings on the shelf.
  • Technical support to confirm the correct ring variant for your chamber configuration.

Frequently asked questions

What does this focus ring actually do in the chamber?

It encircles the 300 mm wafer and extends the plasma sheath past the wafer edge, keeping ion trajectories vertical so the etch profile and critical dimensions stay under control on the outermost dies. It also forms part of the RF return path and acts as a sacrificial surface that erodes in place of the surrounding hardware.

Is this an original TEL OEM part?

No. This is a 2nd source, new part supplied as an OEM-compatible equivalent to TEL OEM P/N 3D10-250369-11. It is manufactured and verified to match the original ring’s form, fit and function, but it is not an original TEL-branded component.

How often does a focus ring need replacing?

It depends on chemistry, power and recipe time, but focus rings are among the shortest-lived consumables in an etch chamber. Replacement is driven by accumulated RF hours, measured step-height loss or a drift in edge CD, uniformity or particle counts, whichever reaches its limit first.

What happens if I run a worn ring too long?

Edge etch rate and profile drift as the step erodes, costing yield on perimeter dies. Worn rings also shed particles and can develop grounding faults that lead to arcing, which can damage the wafer and other chamber parts. Replacing at the qualified end-of-life avoids these risks.

What is the lead time for ES7099-031?

Typical lead time is 4-5 weeks. We recommend holding a buffer stock of focus rings given their high replacement frequency, and we can support planned-buy or consignment arrangements to keep them available for scheduled PM.

Will this ring match my specific TEL chamber configuration?

The 360-302-T4 / “TAP” designation identifies a specific dimensional and tapping variant. To be certain it matches your chamber, confirm the OEM part number and the physical profile (diameter, step, taper and tapping) against your existing ring, and our team can help verify the correct variant before you order.

Summary

The TEL Focus Ring 360-302-T4 (OEM P/N 3D10-250369-11, ESCT P/N ES7099-031) is a sacrificial edge-confinement consumable for Tokyo Electron 300 mm plasma etch chambers. By extending the plasma sheath and shaping the field at the wafer perimeter, it holds edge critical dimensions, etch uniformity, RF coupling and particle performance steady, tying a correctly profiled, plasma-grade replacement to edge yield and predictable maintenance. Supplied as a 2nd source, new, form-fit-function equivalent with a 4-5 week lead time, it gives fabs a cost-effective, qualified alternative to single-source OEM supply.

Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 3D10-250369-11. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.

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