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The TEL Cathode Electrode (OEM P/N 3D10-250316-11(S)) is a powered electrode assembly used in Tokyo Electron (TEL) 300 mm plasma etch process chambers. Within the chamber stack it forms part of the lower electrode architecture, where it couples radio-frequency (RF) power into the discharge and helps establish the plasma sheath that drives directional ion etching of the wafer edge and surface. As a cathode, it is one of the most electrically active surfaces in the chamber, and its condition has a direct bearing on plasma density, sheath voltage and the uniformity of the etch result across a full 300 mm wafer.
Cathode electrodes of this type sit in the high-flux region of the discharge, directly exposed to ion bombardment and reactive radicals. They are typically fabricated from high-purity silicon or silicon-based material so that any sputtered or eroded product is process-compatible rather than a metallic contaminant. The electrode works in concert with focus rings, edge rings and the surrounding insulator hardware to confine the plasma, shape the electric field at the wafer edge and provide a controlled RF return path back to chamber ground.
Because it carries RF current and defines a critical plasma-facing boundary, the cathode electrode is a scheduled consumable. As it erodes, the gap geometry, capacitive coupling and edge field all drift, which is why fabs track it as a preventive-maintenance item and replace it on a defined interval. The ESCT P/N ES7099-016 is offered as a form-, fit- and function-matched replacement so that this maintenance can be carried out without waiting on extended OEM lead times.
The cathode electrode is far more than a passive plate. It is an active component of the RF delivery network and a primary plasma-facing boundary that defines how energy reaches the wafer. Its main functions in a TEL 300 mm etch chamber include:
Cathode electrodes for TEL 300 mm etch chambers are manufactured from high-purity silicon-based material selected for both its electrical behaviour and its compatibility with fluorine- and chlorine-bearing etch chemistries. Material specification matters because the electrode is consumed during normal operation, and what it sputters becomes part of the chamber environment.
In service the electrode endures continuous ion bombardment, thermal cycling and chemical attack. Its ability to wear predictably (rather than crack, pit or delaminate) is what allows fabs to schedule replacement with confidence and keep process drift within tolerance between maintenance events.
Because the cathode electrode sits at the heart of the RF and plasma-shaping system, its condition propagates directly into wafer-level results. A worn, contaminated or out-of-spec electrode does not fail silently, it shows up as measurable process drift and yield loss:
The dominant wear mechanism is gradual sputter erosion from ion bombardment. As the electrode thins, the electrode gap and capacitive coupling shift, slowly moving etch rate and uniformity away from the qualified baseline until the part reaches its replacement limit.
Repeated thermal cycling combined with the brittleness of silicon-based material can lead to micro-cracking, edge chipping or fracture, particularly if the part is mishandled during installation. Cracks compromise both electrical performance and mechanical integrity and are a frequent source of particles.
Reactive etch by-products can deposit on the electrode surface as polymer or residue films. These deposits alter local impedance and surface chemistry, can flake off as defects, and degrade the consistency of RF coupling if the electrode is run beyond its intended service window.
Replacement should be performed by trained technicians following TEL maintenance procedures for the specific chamber. The silicon electrode is brittle and an RF-critical surface, so keep it clean and handle it carefully. A typical sequence is:
Cathode electrodes are recurring consumables, so a dependable second-source supply is central to keeping etch tools available and process windows stable. ESCT Fab Support supplies the ES7099-016 cathode electrode as a cost-effective alternative to sole-source procurement, with benefits including:
It is the powered (cathode) electrode that couples RF energy into the plasma and helps set the sheath voltage that drives directional ion etching. It also acts as a process-compatible plasma-facing surface and part of the RF return system, so its condition strongly influences etch rate, uniformity and plasma stability.
No. ESCT P/N ES7099-016 is supplied as a new, OEM-compatible cathode electrode that is verified to the form, fit and function of OEM P/N 3D10-250316-11(S). It is not an original Tokyo Electron part and is not sold as one; it is offered as a second-source alternative for fabs seeking supply flexibility.
It is manufactured from high-purity silicon-based material chosen for controlled resistivity, compatibility with fluorine- and chlorine-based etch chemistries, and process-compatible erosion so that wear products do not introduce metallic contamination onto the wafer.
Replacement is usually driven by a preventive-maintenance interval based on accumulated RF hours or wafer count, supported by inspection. Drifting etch rate or uniformity, rising reflected power, increased particle counts, or visible thinning, cracking or contamination are all signs the electrode has reached the end of its useful service window.
The current lead time is 4-5 weeks. Because cathode electrodes are recurring consumables, we recommend aligning orders with your preventive-maintenance plan and holding appropriate safety stock so a tool is never held up waiting on a spare.
Any plasma-facing RF component should be qualified after installation. As with an OEM replacement, the recommended practice is to run RF match verification and process qualification wafers, confirming etch rate, uniformity and particle performance before returning the tool to production.
The TEL Cathode Electrode (OEM P/N 3D10-250316-11(S)), supplied by ESCT Fab Support as P/N ES7099-016, is a high-purity silicon RF cathode for Tokyo Electron 300 mm plasma etch chambers. It couples RF power into the discharge, shapes the plasma sheath and serves as a process-compatible plasma-facing surface, making it central to etch rate, uniformity and particle performance. As a scheduled consumable subject to sputter erosion, thermal cracking and surface contamination, it benefits from a reliable second-source supply. Offered in 2nd Source NEW condition with a 4-5 week lead time and a clear OEM cross-reference, ES7099-016 helps fabs sustain etch-tool uptime and stable process windows without sole-source dependency.
Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 3D10-250316-11(S). It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.
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