FOCUS RING,PM 380-303 T4

PART DETAILS

3D10-251187-V1
FOCUS RING,PM 380-303 T4

OEM P/N: 

3D10-251187-V1

ESCT P/N: 

ES7099-147

PART TYPE:

2nd Source NEW

OEM: 

TEL
MORE INFO

Focus ring, PM 380-303 T4 (OEM P/N 3D10-251187-V1), edge plasma confinement ring for TEL 300 mm etch systems

ESCT P/N ES7099-147 · Tokyo Electron (TEL) compatible chamber consumable

The Focus Ring, PM 380-303 T4 (OEM P/N 3D10-251187-V1) is a plasma-facing edge consumable used in Tokyo Electron (TEL) 300 mm plasma etch process modules. As the name indicates, this component is a focus ring, the annular part that surrounds the production wafer on the electrostatic chuck and extends the plasma sheath outward beyond the wafer’s physical edge. The “PM 380-303 T4” designation reflects the part’s position within a specific process-module configuration, and the “T4” suffix typically denotes a revision or thickness/profile variant within that family.

Within the etch chamber, the focus ring sits concentrically around the wafer at the same plane as the chuck surface, bridging the gap between the electrostatically clamped wafer edge and the surrounding chamber hardware. It is one of the most directly consumed parts in the reactor because it is continuously exposed to ion bombardment, reactive radicals and the intense electric fields concentrated at the wafer periphery. Its condition has an outsized influence on how cleanly and uniformly the outermost few millimetres of every wafer are etched.

Because edge die now represent a substantial fraction of usable area on a 300 mm wafer, the focus ring is treated as a critical scheduled-replacement consumable rather than a passive bracket. A worn or out-of-spec focus ring degrades edge etch rate, tilts the etch profile near the wafer boundary and increases edge particle counts, all of which translate directly into yield loss on the highest-value perimeter of the wafer.

Functional role of the focus ring in TEL etch platforms

The focus ring is an active part of the plasma sheath geometry, not merely mechanical trim around the wafer. By presenting a continuation of the wafer surface to the discharge, it conditions the way ions arrive at the wafer edge and stabilises the local electrical environment. Its principal functions in a TEL etch module include the following:

  • Extending the plasma sheath beyond the wafer periphery so the sheath boundary is straight and the ion trajectories at the edge remain vertical rather than bending inward.
  • Maintaining edge-to-centre etch uniformity by shifting the etch-rate roll-off and ion-flux gradient out into the sacrificial ring rather than onto the outermost product die.
  • Confining and shaping the discharge over the wafer edge, helping define where the reactive plasma terminates relative to the wafer boundary.
  • Providing a controlled, replaceable sacrificial surface that absorbs ion bombardment and erosion in place of the chuck and surrounding chamber hardware.
  • Supporting the local RF field distribution and capacitive coupling at the wafer edge, contributing to a consistent self-bias profile across the full wafer diameter.
  • Shielding the edge of the electrostatic chuck and the underlying ceramic from direct plasma attack, protecting far more expensive long-life hardware.

Material and process performance

Focus rings of this class are manufactured from high-purity materials selected to survive aggressive fluorine- and chlorine-based etch chemistries while contributing as little contamination as possible. The material set and its dimensional stability are what separate a focus ring that holds process for a full preventive-maintenance interval from one that drifts early.

Material composition and plasma resistance

Etch focus rings are typically produced from high-purity silicon, silicon carbide or, in some recipes, quartz, depending on the chemistry and whether the ring is intended to be silicon-consuming or erosion-resistant. Purity has to be high so that any material sputtered from the ring is benign to the process and does not introduce metallic or particulate contamination onto the wafer edge.

  • Resistance to physical sputtering and chemical etching by reactive ion species at high RF bias.
  • Controlled, predictable erosion behaviour so that wear is gradual and compensable rather than sudden.
  • Low trace-metal and particulate content to protect edge-die defectivity budgets.

Dimensional and electrical stability

Beyond raw plasma resistance, the ring must hold tight tolerances on inner diameter, height, flatness and the step that registers against the chuck. These dimensions set the gap to the wafer edge and the relative height of the ring surface, both of which directly steer the sheath shape and the edge etch result.

  • Precise inner diameter and seating step for repeatable wafer-to-ring gap and concentric placement.
  • Tight flatness and parallelism to maintain even contact and consistent thermal coupling to the chuck.
  • Stable bulk resistivity and dielectric behaviour to keep edge RF coupling uniform wafer to wafer.

Impact on tool performance and yield

Because it governs the electrical and physical boundary conditions at the wafer edge, the state of the focus ring shows up immediately in edge metrology and defect data. A ring that has eroded past its usable window produces effects that propagate from the perimeter inward:

  • Edge etch-rate drift and a widening centre-to-edge uniformity signature as the ring height drops.
  • Tilted or bowed etch profiles on outer die caused by a distorted sheath bending ions inward.
  • Rising edge particle counts and defectivity as the eroded ring sheds material onto the wafer perimeter.
  • Loss of usable edge die and reduced effective yield per wafer on the highest-area region.
  • Process-window narrowing that forces tighter recipe limits and more frequent qualification runs.
  • Shorter intervals between wet cleans or chamber requalification if erosion debris accumulates.

Common wear and failure modes

The focus ring is a sacrificial part by design, so “failure” is usually erosion reaching an end-of-life threshold rather than catastrophic breakage. The dominant mechanisms are described below.

Erosion and height loss

Continuous ion bombardment gradually thins the ring, lowering its top surface relative to the wafer. As the ring recedes, the sheath above the wafer edge deforms, the edge etch rate shifts and profiles begin to tilt. This is the normal end-of-life mechanism and is the primary reason the ring is on a defined replacement schedule.

Surface roughening and particle generation

Prolonged exposure roughens and pits the plasma-facing surface, and redeposited films can flake. Both effects raise the risk of particles landing on the wafer edge, driving defectivity excursions well before the ring is fully eroded if it is left in service too long.

Cracking and thermal stress

Repeated thermal cycling, mishandling during installation or an uneven seat can crack a brittle ceramic or silicon ring. A cracked or chipped ring disturbs the local field, can arc, and may shed large particles, so any sign of fracture is cause for immediate replacement.

Installation and replacement guidance

Focus ring replacement is a routine preventive-maintenance activity but demands cleanroom discipline because the ring sits directly on the electrostatic chuck. Always follow the TEL maintenance procedure for the specific process module; the sequence below is a general guide.

  • Place the chamber in maintenance mode, vent to atmosphere per procedure and confirm RF and gas isolation before opening.
  • Don clean, particle-free gloves and use approved vacuum or handling tooling; never touch the plasma-facing surfaces with bare hands.
  • Lift out the worn focus ring carefully, noting its orientation, and inspect the chuck seat and edge for residue, debris or damage.
  • Clean the seating surface to the specified standard so the new ring beds flat with full, even contact and correct thermal coupling.
  • Seat the new ES7099-147 ring in the correct orientation, confirming it is fully home, concentric and flush with no rocking or gap.
  • Reassemble the module, pump down, leak-check and run the prescribed season or burn-in recipe to condition the new surface.
  • Requalify with edge uniformity, particle and profile checks, and reset the part’s RF-hours or wafer-count life counter.

Spare parts strategy for TEL etch consumables

Focus rings are high-frequency consumables, so their availability and consistency directly affect tool uptime and cost of ownership. Sourcing them through ESCT Fab Support gives fabs and refurbishers a dependable, cost-effective alternative to single-source OEM procurement:

  • Second-source, new parts verified to the form, fit and function of OEM P/N 3D10-251187-V1.
  • Clear cross-referencing under ESCT P/N ES7099-147 for simple, repeatable reordering.
  • Competitive pricing that lowers the per-wafer cost of a frequently replaced consumable.
  • A typical lead time of 4–5 weeks, supporting planned PM scheduling and buffer-stock strategies.
  • Reduced reliance on a single supply channel, improving resilience for high-runner etch chambers.
  • Knowledgeable support to confirm applicability against your specific TEL process-module configuration.

Frequently asked questions

What does this focus ring actually do in the chamber?

It surrounds the wafer on the chuck and extends the plasma sheath beyond the wafer edge, keeping ion trajectories vertical at the perimeter. This preserves edge-to-centre etch uniformity and protects the chuck, so the outermost die etch correctly and consistently.

Is this an original OEM part?

No. This is a second-source, new part supplied as an OEM-compatible alternative to TEL OEM P/N 3D10-251187-V1. It is not manufactured or branded by Tokyo Electron, but it is verified to match the original in form, fit and function.

How often should the focus ring be replaced?

Replacement is driven by erosion, typically tracked by RF hours or wafer count and tied to your preventive-maintenance schedule. The correct interval depends on your chemistry, power levels and edge metrology limits, so follow your established TEL PM data and end-of-life criteria.

What materials are these focus rings made from?

Etch focus rings are made from high-purity materials such as silicon, silicon carbide or quartz, chosen for plasma resistance and low contamination. The appropriate material depends on the process recipe and whether the ring is intended to be erosion-resistant or sacrificially consuming.

How do I confirm this part fits my tool?

Match the TEL OEM P/N 3D10-251187-V1 and the ESCT P/N ES7099-147 against your chamber’s bill of materials and process-module configuration. If you are unsure, contact ESCT Fab Support with your tool and module details and we will confirm applicability before you order.

What is the lead time for this focus ring?

The typical lead time is 4–5 weeks. Because focus rings are frequently replaced consumables, we recommend planning orders around your PM cadence and holding appropriate buffer stock to avoid unplanned tool downtime.

Summary

The Focus Ring, PM 380-303 T4 (OEM P/N 3D10-251187-V1, ESCT P/N ES7099-147) is a plasma-facing edge consumable for Tokyo Electron 300 mm etch modules that shapes the plasma sheath at the wafer perimeter, sustains edge-to-centre etch uniformity and protects the electrostatic chuck. As a sacrificial part that erodes over normal operation, it is a scheduled-replacement item whose condition strongly influences edge yield, profile control and particle performance. Supplied by ESCT Fab Support as a second-source new part with clear cross-referencing and a 4–5 week lead time, it offers a reliable, cost-effective route to keeping high-runner TEL etch chambers in spec.

Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 3D10-251187-V1. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.

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