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The F-8S0-SI-260-4A is a silicon focus ring used in Tokyo Electron (TEL) 300 mm plasma etch process chambers. The “SI” designation in the part name identifies the body material as high-purity silicon, and the “260” dimension code reflects the ring geometry sized to surround a 300 mm wafer at the wafer edge. As a focus ring, it encircles the wafer on the lower electrode (electrostatic chuck) assembly and forms the immediate plasma-facing boundary at the outer perimeter of the wafer, where edge etch behaviour is most difficult to control.
In a capacitively coupled etch chamber, the focus ring is one of the most consequential consumables in the entire process kit. It sits in the high-flux region directly exposed to reactive plasma species and energetic ion bombardment, and it works as both an electrical and a physical extension of the wafer. Because silicon shares the dielectric and conductive characteristics of the wafer itself, a silicon focus ring extends the RF field and plasma sheath outward past the silicon edge, so the last few millimetres of die land area see an etch environment close to that experienced at the wafer centre.
The F-8S0-SI-260-4A matters because edge die are real, revenue-bearing product. A worn, eroded or mismatched focus ring is one of the most common root causes of edge-of-wafer critical dimension drift, tilted etch profiles in the outer zone, and edge particle excursions. Maintaining this ring as a controlled, scheduled consumable is fundamental to holding wafer-to-wafer and ring-life repeatability on TEL etch platforms.
The focus ring performs several simultaneous functions at the wafer edge, electrical, plasma-physical and mechanical, all of which influence edge process results on TEL etch chambers:
The F-8S0-SI-260-4A is manufactured from high-purity silicon to match the etch and sputter response of the product wafer. High-purity silicon erodes predictably under fluorine- and oxygen-bearing plasmas and does not introduce metallic or unwanted dielectric contamination into the chamber. Because the ring shares the wafer’s material behaviour, the plasma sheath transitions smoothly from wafer to ring, which is the property that protects edge-die etch uniformity.
Focus-ring performance depends as much on geometry as on material. Inner diameter, ring height relative to the wafer plane, step profile and flatness all govern how the sheath bends at the edge. The F-8S0-SI-260-4A is produced to the form, fit and dimensional envelope of the OEM ring so that sheath shaping, the wafer-to-ring gap and seating against the chuck reproduce the original edge process window.
Because the focus ring directly conditions the edge plasma, its state propagates straight into wafer-level results and fab economics:
The dominant wear mechanism is steady consumption of the silicon surface by ion bombardment and chemical etch. As the ring thins, its top surface drops below the wafer plane, the edge sheath bends inward and ion trajectories tilt, degrading edge profile control. Height loss is the primary parameter against which focus-ring life is qualified and replacement is scheduled.
Repeated RF on/off cycling and thermal gradients stress the silicon, which is hard but brittle. Over many cycles, micro-cracks can initiate at the inner edge or at seating contact points and propagate, potentially leading to chipping or fracture. A cracked ring is an immediate particle and arcing risk and must be removed from service rather than run to a height limit.
Toward end of life the silicon surface roughens and may accumulate redeposited polymer and etch by-products. These films can flake and shed particles onto the wafer edge, and a rough or contaminated surface alters local chemistry and RF return behaviour. Roughening and deposition are leading drivers of edge defectivity excursions and trigger preventive replacement and wet-clean intervals.
Focus-ring replacement is a routine but contamination-sensitive preventive maintenance task. Follow the TEL chamber service procedure and your fab’s PM specification; the sequence below summarises good practice:
Silicon focus rings are scheduled consumables, so the supply strategy should treat them as a planned, recurring spend rather than an emergency purchase. ESCT Fab Support supplies the F-8S0-SI-260-4A (ESCT P/N ES7099-172) as a qualified second-source alternative to keep TEL etch chambers running with predictable cost and availability:
It is a high-purity silicon focus ring for TEL 300 mm plasma etch chambers. It encircles the wafer on the lower electrode and shapes the edge plasma sheath so that the outermost die are etched with the same vertical ion behaviour and uniformity as the wafer centre, protecting edge critical dimensions and profile.
No. This is not an original Tokyo Electron part. It is supplied as a second-source, brand-new OEM-compatible silicon focus ring that is verified to the form, fit and function of OEM P/N 1D10-350650-11 and cross-referenced under ESCT P/N ES7099-172.
Replacement is normally scheduled against accumulated RF hours and measured height loss, with replacement triggered when the ring reaches its qualified erosion limit or when edge metrology drifts. Any visible cracking, chipping, heavy roughening or flaking warrants immediate removal regardless of remaining height.
As the ring erodes and drops below the wafer plane, the edge sheath bends inward and ion trajectories tilt, causing edge profile tilt and critical-dimension drift on the outer die. A degraded surface also raises particle defectivity, so worn rings directly reduce edge-die yield.
Indicative lead time is 4-5 weeks. Because the focus ring is a recurring consumable, it is best managed with buffer stock sized to your PM frequency and chamber count so that scheduled replacements are never delayed by procurement lead time.
The ring is produced to the OEM dimensional envelope and high-purity silicon specification so that sheath shaping, wafer-to-ring gap and seating reproduce the original edge process window. As with any consumable change, qualify the first installation with your standard monitor wafers and chamber-match recipes before full release.
The F-8S0-SI-260-4A is a high-purity silicon focus ring for Tokyo Electron 300 mm plasma etch chambers, sitting at the wafer edge on the lower electrode where it shapes the plasma sheath, protects edge etch uniformity and acts as a sacrificial, same-material boundary. As a scheduled consumable subject to erosion, cracking and surface degradation, it should be tracked against RF hours and replaced on a planned basis to hold edge-die yield and chamber matching. Supplied by ESCT Fab Support as a second-source NEW part under ESCT P/N ES7099-172, verified to OEM P/N 1D10-350650-11, with an indicative 4-5 week lead time, it gives fabs a cost-effective, reliably available alternative for one of the most performance-critical consumables in the etch chamber.
Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 1D10-350650-11. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.
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