RING,FOCUS N(LLD)

PART DETAILS

1D10-350674-11
RING,FOCUS N(LLD)

OEM P/N: 

1D10-350674-11

ESCT P/N: 

ES7099-171

PART TYPE:

2nd Source NEW

OEM: 

TEL
MORE INFO

Focus ring N (LLD) (OEM P/N 1D10-350674-11), plasma-confinement edge ring for TEL 300 mm etch systems

ESCT P/N ES7099-171, 2nd source NEW replacement focus ring for Tokyo Electron (TEL) plasma etch process chambers

The Focus Ring N (LLD), carrying TEL OEM part number 1D10-350674-11, is a consumable edge ring that sits in the wafer-edge region of a Tokyo Electron 300 mm plasma etch chamber. It encircles the wafer on the electrostatic chuck and forms the immediate boundary between the active plasma above the wafer and the surrounding chamber hardware. In TEL nomenclature the “N” designation distinguishes a particular ring variant within a process kit, and the “LLD” qualifier relates to the lower-electrode / lower-load-dependent zone where this ring is fitted, the part of the cathode assembly that shapes the sheath at the outermost few millimetres of the wafer.

Although it carries no electrical connectors and no moving parts, the focus ring is one of the most performance-critical consumables in the chamber. The few millimetres of material at the wafer periphery determine whether the last ring of dies on a 300 mm wafer etches with the same critical dimension, profile angle and depth as the centre. As a sacrificial component exposed continuously to energetic ions, reactive radicals and RF fields, it erodes predictably over the course of a maintenance cycle and must be replaced on a defined schedule to keep edge yield within specification.

This listing covers a 2nd source, brand-new focus ring manufactured to match the form, fit and function of the original TEL component. It is intended for engineers and fab maintenance teams who need a reliable, cost-effective alternative to the OEM consumable without compromising on edge etch uniformity or particle performance.

Functional role of the focus ring in TEL 300 mm etch platforms

The focus ring extends the wafer plane outward so that the plasma sheath does not collapse or bend at the wafer edge. By presenting a continuation of the dielectric or semiconducting surface beyond the wafer, it keeps the electric field lines vertical across the outermost dies, which is exactly what is needed to hold critical dimensions and profile verticality at the periphery. Its principal functions include:

  • Extending the effective process surface beyond the wafer edge so the plasma sheath remains uniform across the last dies.
  • Shaping the sheath bending angle to control ion incidence at the periphery and minimise edge tilt or striation.
  • Confining the plasma over the wafer and protecting the electrostatic chuck and underlying cathode hardware from direct ion bombardment.
  • Participating in the RF return path so that impedance at the wafer edge stays consistent as the ring wears.
  • Acting as a sacrificial barrier that absorbs erosion that would otherwise attack more expensive chuck and electrode components.
  • Maintaining a defined gap and concentricity with the wafer so process gases and by-products flow evenly around the wafer perimeter.

Material and process performance

Focus rings for 300 mm etch chambers are produced from high-purity materials selected to match the plasma chemistry and to erode in a clean, predictable manner. Depending on the process step, edge rings of this class are typically silicon, silicon carbide, quartz or a comparable high-purity ceramic. The choice governs both erosion rate and contamination behaviour, and a 2nd source ring must replicate the original specification closely to deliver the same lifetime and particle performance.

Purity and erosion behaviour

Material purity matters because anything sputtered from the ring lands on the wafer. A ring matched to the OEM grade erodes uniformly rather than pitting, keeps trace-metal contamination low and avoids introducing foreign species into the etch chemistry. Consistent density and grain structure let the surface recede evenly so that the sheath shape changes slowly and predictably across the consumable’s life.

  • High-purity base material to minimise trace-metal and particle contamination of the wafer edge.
  • Uniform microstructure for an even, predictable erosion front rather than localised pitting.
  • Resistance to fluorine, chlorine and bromine-based etch chemistries used in dielectric and conductor etch.

Dimensional and surface accuracy

The ring’s inner diameter, height, step geometry and flatness define the gap between ring and wafer and the local field shape. Tight machining tolerances and a controlled surface finish are needed so the new ring drops into the process kit, seats flat on the chuck and reproduces the sheath profile the recipe was tuned around.

  • Precise inner diameter and step profile to set the correct wafer-to-ring gap.
  • Tight flatness and parallelism for even seating and consistent thermal contact with the chuck.
  • Controlled surface finish to support stable RF coupling and clean erosion.

Impact on tool performance and yield

Because the focus ring governs conditions at the wafer edge, its condition translates directly into edge-die yield and process repeatability. As the ring thins through normal use, the sheath at the periphery shifts and edge etch results drift. A correctly specified, fresh ring restores the baseline the chamber was qualified to, while a worn or mismatched ring shows up as a measurable edge signature in metrology. Key consequences include:

  • Edge-to-centre critical dimension uniformity and the number of usable dies in the outer ring.
  • Profile angle and tilt control at the wafer periphery.
  • Etch depth and rate consistency across the full 300 mm wafer.
  • Particle counts at the wafer edge as the ring surface degrades.
  • Chamber-to-chamber matching and the stability of the maintenance interval between part changes.

Common wear and failure modes

The focus ring is a sacrificial part, so the question is rarely whether it will wear but when it crosses the threshold that affects yield. Recognising the dominant failure modes helps teams set the right replacement interval.

Erosion and thinning

Continuous ion bombardment gradually erodes the ring’s upper surface and inner step. As height is lost the sheath at the wafer edge bends differently, edge tilt increases and critical dimensions drift outward. This is the normal end-of-life mechanism and is the basis for scheduled replacement once a defined erosion budget is reached.

Cracking and chipping

Thermal cycling, mechanical handling during maintenance and stress on a thinned ring can cause cracks or edge chips. Liberated fragments become particle sources that contaminate the wafer and can damage the chuck surface, making cracked rings an immediate-replacement condition rather than a wait-and-see one.

Surface build-up and contamination

Polymer and etch by-product deposition on the ring, or back-side particles that prevent flat seating, disturb both the local field and thermal contact with the chuck. The result is uneven erosion, arcing risk and an edge process that no longer matches the qualified recipe even before the ring is fully worn.

Installation and replacement guidance

Replacement should follow TEL maintenance procedures for the specific chamber and be carried out by trained personnel under appropriate cleanliness controls. The following sequence outlines a typical edge-ring change:

  • Vent the chamber and follow lock-out / tag-out and RF-safe procedures before opening the lid.
  • Remove the worn focus ring carefully, noting its orientation and avoiding contact with the electrostatic chuck surface.
  • Inspect and clean the chuck seating area and surrounding process-kit parts, removing any deposits or loose particles.
  • Unpack the new ring with clean, gloved hands or vacuum tooling and verify it is free of cracks, chips and packaging debris.
  • Seat the ring squarely in its location, confirming correct orientation, concentricity with the wafer position and full flat contact.
  • Close the chamber, pump down, leak-check and run the required season or conditioning recipe to stabilise surfaces.
  • Qualify with a monitor wafer and edge metrology before returning the chamber to production, and log the change for consumable-life tracking.

Spare parts strategy for TEL etch consumables

Focus rings are scheduled consumables, so a dependable supply at a sensible cost has a direct effect on cost-of-ownership and tool availability. Sourcing ES7099-171 through ESCT Fab Support offers several advantages:

  • A 2nd source, brand-new part verified to the form, fit and function of TEL P/N 1D10-350674-11.
  • A cost-effective alternative to the OEM consumable for a high-turnover, scheduled-replacement item.
  • Support for stocking and forecasting against a planned maintenance interval, with a typical lead time of 4-5 weeks.
  • Clear cross-referencing to both the ESCT and OEM part numbers to simplify ordering and inventory control.
  • Knowledgeable support for TEL 300 mm etch process-kit consumables across the fab.

Frequently asked questions

What does the focus ring N (LLD) actually do in the chamber?

It sits around the wafer on the lower electrode and extends the process surface beyond the wafer edge, keeping the plasma sheath uniform so the outermost dies etch with the same critical dimension and profile as the centre. It also confines the plasma and protects the chuck from direct ion bombardment.

Is this an original TEL OEM part?

No. This is a 2nd source, brand-new component supplied as a new OEM-compatible part. It is manufactured and verified to match the form, fit and function of TEL P/N 1D10-350674-11, but it is not an original OEM part and is not sold as one.

How often should the focus ring be replaced?

Replacement is driven by an erosion budget rather than a fixed time. Most fabs track ring life by RF hours or wafer count and change the ring once edge metrology begins to drift or the ring reaches its qualified erosion limit. A cracked or chipped ring should be replaced immediately.

What happens if a worn ring is left in service?

As the ring thins, the sheath at the wafer edge changes shape, producing edge tilt, critical-dimension drift and reduced edge-die yield. Severe wear, cracking or surface build-up can also raise particle counts and create arcing risk, so running past end-of-life trades a small consumable saving for a far larger yield loss.

Does replacing the ring require requalification?

Yes. After fitting a new ring the chamber should be pumped down, leak-checked and run through the relevant season or conditioning recipe, then qualified with a monitor wafer and edge metrology before returning to production. This confirms the edge process matches the chamber baseline.

What is the lead time for this part?

The typical lead time for ES7099-171 is 4-5 weeks. Because the focus ring is a scheduled consumable, we recommend forecasting demand against your planned maintenance interval and holding appropriate safety stock to avoid unplanned tool downtime.

Summary

The Focus Ring N (LLD), TEL P/N 1D10-350674-11 and ESCT P/N ES7099-171, is a sacrificial edge ring at the heart of edge etch performance in TEL 300 mm plasma etch chambers. By extending the process surface beyond the wafer and shaping the plasma sheath at the periphery, it controls edge critical dimensions, profile, particle performance and RF return at the wafer edge. Supplied here as a 2nd source, brand-new part with a 4-5 week lead time, it gives fab maintenance teams a cost-effective, dependable way to keep edge yield and chamber matching within specification.

Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 1D10-350674-11. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.

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