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The RING, F-8SO-SI-260-3.4A (325-22.5), carrying Tokyo Electron (TEL) OEM part number 1D10-350647-M3, is a silicon focus ring used in TEL 300 mm plasma etch process chambers. As its designation indicates, this is a machined silicon (SI) annular consumable that sits at the perimeter of the electrostatic chuck, surrounding the production wafer. The numeric fields in the name describe its physical geometry: a nominal outer diameter in the 260 mm class, a thickness on the order of 3.4 mm in the active zone, and a finished diameter envelope in the 325 mm range, all consistent with an edge ring designed to ring a 300 mm wafer.
In a capacitively coupled or inductively coupled plasma etch chamber, the focus ring is one of the most influential consumables for edge yield. It is consumed continuously during processing, and its erosion profile directly maps onto wafer edge etch results. Because it sits in the most aggressive part of the plasma sheath and conducts RF return current, the material grade, dimensional accuracy and surface finish of this ring are not cosmetic details, they are process-critical parameters.
ESCT Fab Support supplies this ring under part number ES7099-195 as a 2nd Source NEW component. It is manufactured to be dimensionally and functionally compatible with the TEL original, offering fabs a qualified alternative to single-source OEM procurement while maintaining the silicon grade and tolerances the application demands.
The focus ring extends the wafer surface electrically and topographically. Without it, the plasma sheath would bend sharply at the wafer edge, distorting the trajectory of incoming ions and ruining etch uniformity in the outermost dies. By presenting a continuous silicon surface beyond the wafer perimeter, this ring keeps the sheath flat and the ion flux vertical across the full 300 mm field. Its specific functions include the following:
The “SI” identifier in the part name denotes a machined silicon ring rather than a quartz, silicon carbide or ceramic variant. Etch-grade silicon is chosen because it erodes in a predictable, chemically benign way and because it does not introduce metallic or foreign-species contamination into the process. Key material characteristics for this ring include:
Because the ring sits within a fraction of a millimetre of the wafer edge, its machined tolerances and flatness govern how cleanly the sheath transitions from wafer to ring. A precise inner diameter, a controlled step height relative to the wafer surface and a consistent thickness in the ~3.4 mm active band both matter. Important geometric and finish factors include:
A focus ring in good condition is effectively invisible to the process engineer because edge results stay within specification. As it wears, however, its influence becomes one of the leading causes of edge-die loss and recipe drift. The condition of this ring affects:
The dominant wear mechanism is steady plasma and ion erosion that thins the ring over its service life. As the active band loses height, the sheath above the ring drops relative to the wafer, ion trajectories at the edge begin to tilt inward, and edge-die critical dimensions drift out of specification. This is a gradual, predictable process, which is why fabs track RF hours or wafer counts and replace the ring proactively before edge yield degrades.
Silicon is hard but brittle, so thermal cycling, RF stress and mechanical handling can initiate micro-cracks that propagate into full fractures. A cracked ring not only changes the local electric field but can also shed large particles onto the wafer, causing immediate defect excursions. Mishandling during installation, over-torquing fasteners, point loading, or dropping the part, is a frequent root cause and is entirely avoidable with careful technique.
Over time the exposed surface roughens as preferential etching and polymer build-up develop. Roughened or flaking surfaces become particle sources and can disturb the local plasma. When in-line particle monitors or wafer defect maps show a rising edge signature, the focus ring is one of the first consumables to inspect and replace as part of preventive maintenance.
Focus ring replacement is a routine but precision-sensitive preventive-maintenance task. Always follow the equipment maker’s documented procedure and your fab’s safety protocols; the steps below are a general framework for a TEL etch chamber ring change:
Because the focus ring is a high-frequency consumable, maintaining the right stock buffer prevents unplanned downtime and protects edge yield. With a 4–5 week lead time on this part, so plan ahead. A sound strategy includes:
It is a silicon focus ring that surrounds the 300 mm wafer, extending the plasma sheath beyond the wafer edge to keep ion incidence vertical. This preserves edge etch uniformity, helps confine the plasma, provides an RF return path and protects the electrostatic chuck from erosion.
No. This is a 2nd Source NEW, OEM-compatible component supplied under ESCT part number ES7099-195. It is built to be dimensionally and functionally equivalent to TEL OEM P/N 1D10-350647-M3, but it is not an original Tokyo Electron part and is not sold as one. Tokyo Electron and TEL references are used only to identify compatibility.
It is machined from high-purity etch-grade silicon, as indicated by the “SI” field in the part name. Silicon is selected for predictable erosion, low contamination and compatibility with the fluorine- and chlorine-based chemistries used in plasma etch processing.
Replacement is typically driven by accumulated RF hours or wafer count, by erosion-related thickness loss that pushes edge critical dimensions out of specification, or by a rising edge particle or defect signature. Visible cracking, chipping or heavy surface roughening calls for immediate replacement.
Yes. The condition of the focus ring is one of the strongest influences on edge-die etch uniformity and on particle counts at the wafer perimeter. Fitting a correctly dimensioned, defect-free ring and re-qualifying edge uniformity after installation are key to maintaining yield.
The current lead time for ES7099-195 is 4–5 weeks. Because the focus ring is a recurring consumable, we recommend ordering against this lead time and holding appropriate safety stock so that scheduled maintenance is never delayed.
The RING, F-8SO-SI-260-3.4A (325-22.5) (TEL OEM P/N 1D10-350647-M3, ESCT P/N ES7099-195) is a high-purity silicon focus ring for TEL 300 mm plasma etch chambers. It governs edge etch uniformity, plasma confinement, RF return paths and particle performance, and is a regularly consumed sacrificial part subject to erosion, cracking and surface roughening. Supplied by ESCT Fab Support as a 2nd Source NEW, OEM-compatible component with a 4–5 week lead time, it gives fabs a qualified alternative to single-source procurement while protecting edge yield and tool availability.
Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 1D10-350647-M3. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.
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