FOCUS RING,360-T3.4-FLAT

PART DETAILS

2L10-251877-11
FOCUS RING,360-T3.4-FLAT

OEM P/N: 

2L10-251877-11

ESCT P/N: 

ES7099-190

PART TYPE:

2nd Source NEW

OEM: 

TEL
MORE INFO

TEL focus ring 360 mm T3.4 flat profile (OEM P/N 2L10-251877-11), edge confinement consumable for TEL 300 mm plasma etch systems

ESCT Fab Support P/N ES7099-190, 2nd source, new, form-fit-function equivalent to Tokyo Electron 2L10-251877-11

The TEL focus ring designated “360-T3.4-FLAT” is a circular plasma-process consumable that sits concentrically around the 300 mm wafer inside a Tokyo Electron etch chamber. The name decodes into the three attributes that matter most to a process engineer: a nominal 360 mm class outer footprint that frames the wafer pocket on the lower electrode, a T3.4 designation indicating a defined ring thickness or step geometry in the 3.4 mm class, and a FLAT top-surface profile rather than a stepped or recessed contour. Together these define how the ring extends the electrostatic chuck surface beyond the wafer edge and how it shapes the plasma sheath above the outermost die.

In a TEL 300 mm capacitively coupled etch chamber, the focus ring is mounted on the cathode assembly, surrounding the wafer and resting on the dielectric and grounding hardware that complete the lower-electrode stack. Because it is a sacrificial part directly exposed to the same fluorocarbon, oxygen and inert-gas plasmas that etch the wafer, it erodes continuously throughout production. As it thins, the local sheath geometry and ion trajectories at the wafer edge change, so the focus ring is one of the highest-turnover consumables in the chamber and a routine line item in preventive maintenance kits.

A flat-profile ring of this thickness class is typically specified where the process recipe needs a predictable, uniform extension of the plasma boundary right up to the wafer perimeter, without the deliberate ion-steering bias that a stepped profile introduces. Maintaining the correct flat top surface and thickness is therefore central to keeping edge etch rate, profile angle and critical-dimension control inside specification across the full 300 mm field.

Functional role of the focus ring in TEL 300 mm etch platforms

The focus ring is not a passive spacer; it is an active participant in the electrical and physical environment at the wafer edge. By presenting a controlled dielectric and conductive boundary just outside the wafer, it determines how the plasma sheath bends as it reaches the perimeter, and that bending dictates whether the outermost die etch with the same profile as die at the wafer centre. Its principal functions include the following.

  • Extending the effective electrode and sheath beyond the wafer so that edge die see plasma conditions comparable to the wafer centre.
  • Confining and shaping the plasma above the wafer perimeter to keep ion-incidence angles near vertical and prevent profile tilting at the edge.
  • Providing a defined RF return and impedance environment at the edge, stabilising the sheath voltage that drives edge etch rate.
  • Protecting the underlying electrode, chuck periphery and grounding hardware from direct ion and radical attack.
  • Acting as a deliberate sacrificial surface, absorbing erosion so that more costly chamber hardware is preserved.
  • Establishing the flat reference plane around the wafer pocket that supports consistent edge clamping and thermal contact.

Material and process performance

Material construction and plasma resistance

Focus rings for TEL etch chambers are manufactured from high-purity process-compatible materials selected for predictable erosion behaviour and low particle generation. Depending on the recipe family, rings in this class are produced from high-purity silicon, silicon carbide or quartz, with tightly controlled bulk purity and surface finish so that the material does not introduce metallic or particulate contamination into the wafer environment as it wears.

  • High bulk purity to avoid back-sputtering metallic contaminants onto the wafer edge.
  • Controlled, predictable erosion rate in fluorine, oxygen and inert plasmas so that ring life is repeatable lot to lot.
  • Consistent dielectric or resistive properties matched to the original part, preserving sheath and RF behaviour.
  • Low surface roughness and clean edges to minimise particle shedding during handling and processing.

Dimensional and geometric accuracy

For a flat-profile ring the dimensional tolerances are unforgiving, because the flat top surface and the T3.4-class thickness directly set the sheath geometry at the wafer edge. Small deviations in thickness, flatness or inner-diameter concentricity translate into measurable shifts in edge etch rate and profile.

  • Thickness held to the T3.4 specification so the starting sheath height at the edge matches the qualified process.
  • Flatness and parallelism of the top surface controlled so ion-incidence angles stay uniform around the wafer.
  • Inner diameter and concentricity matched to the wafer pocket for correct, repeatable seating.
  • Outer-diameter footprint in the 360 mm class so the ring registers correctly against the surrounding chamber hardware.

Impact on tool performance and yield

Because the focus ring governs conditions at the very edge of the wafer, its condition feeds directly into yield, particularly for the high-value outer ring of die on a 300 mm substrate. A worn or out-of-specification ring degrades results in ways that are often first detected as edge-of-wafer failures.

  • Edge critical-dimension drift and profile tilting as the ring thins and the sheath collapses inward.
  • Loss of within-wafer etch-rate uniformity, with the edge ring of die diverging from the centre.
  • Higher particle counts and edge defects as erosion roughens or fractures the ring surface.
  • Shifts in RF impedance and plasma stability that can move the whole process window.
  • Increased scrap, rework and chamber requalification cost when edge yield falls below limits.

Common wear and failure modes

Erosion and thickness loss

The dominant wear mode is steady erosion of the flat top surface by ion bombardment and chemical attack. As the T3.4 thickness reduces over thousands of RF hours, the sheath at the wafer edge drops and ion trajectories tilt, gradually pushing edge profile and critical dimension out of specification until the ring is replaced at its end-of-life threshold.

Cracking and thermal fatigue

Repeated heating and cooling, combined with the brittleness of silicon, silicon carbide or quartz, can drive micro-cracking or outright fracture, especially around thin sections or where the ring is clamped. A cracked ring sheds particles, distorts the local field and can fail catastrophically during a cycle, forcing an unscheduled chamber-open.

Deposition build-up and contamination

Polymer and by-product films deposit on the ring during processing. If this build-up flakes, it becomes a particle source; if it accumulates unevenly, it perturbs the edge field. Handling residue, fingerprints or improper cleaning can also leave contamination that out-gasses or sputters onto the wafer, so rings must be installed clean and handled only with proper precautions.

Installation and replacement guidance

Focus-ring replacement is a routine but precision preventive-maintenance task. Always follow the applicable TEL maintenance procedure and your fab’s safety and contamination-control protocols; the sequence below is a general guide.

  • Place the chamber in maintenance mode, vent to atmosphere and confirm RF power and gas supplies are isolated and the electrode is at a safe temperature.
  • Open the chamber following the TEL procedure and inspect the worn focus ring, surrounding rings and electrode surfaces, noting erosion and deposition patterns.
  • Remove the spent ring carefully to avoid dislodging particles, and clean the seating area and underlying hardware to specification.
  • Unpack the new ES7099-190 ring in a clean environment using gloves or vacuum tooling, and inspect it for chips, cracks or contamination before fitting.
  • Seat the ring concentrically in the wafer pocket, confirming the flat top surface is level and the ring registers fully without rocking.
  • Close the chamber, pump down and run leak-check, season and any required conditioning recipes before production.
  • Reset the ring-life counter and verify edge uniformity, etch rate and particle performance against qualification limits.

Spare parts strategy for TEL etch consumables

Focus rings are consumed continuously, so a reliable, well-priced second source is central to keeping TEL etch chambers running without inflating cost of ownership. ESCT Fab Support supplies ES7099-190 as a new, form-fit-function alternative to TEL 2L10-251877-11, giving fabs flexibility alongside their OEM channel.

  • New, second-source part verified to the form, fit and function of the original TEL focus ring.
  • Material, dimensions and flat-profile geometry matched to preserve the qualified edge process window.
  • Competitive pricing that lowers cost of ownership on a high-turnover consumable.
  • Typical lead time of 4-5 weeks, supporting planned PM scheduling and buffer-stock strategies.
  • A second supply channel that reduces single-source risk and protects against OEM shortages.

Frequently asked questions

What does the “360-T3.4-FLAT” designation tell me about this ring?

It describes the ring’s key physical attributes: a 360 mm class footprint that frames the 300 mm wafer pocket, a T3.4-class thickness or step dimension, and a flat top-surface profile rather than a stepped one. These set how the ring extends the electrode and shapes the plasma sheath at the wafer edge.

Is this an original TEL part?

No. ES7099-190 is a new, second-source part supplied as an OEM-compatible equivalent to TEL 2L10-251877-11. It is verified to match the original in form, fit and function, but it is not an original Tokyo Electron OEM part and is not sold as one.

How often does a focus ring like this need replacing?

Life depends on the recipe, RF power and duty cycle, so it is best tracked by accumulated RF hours and edge-performance metrics rather than a fixed calendar. The ring is replaced once erosion drops it below its thickness threshold or once edge uniformity and particle data move out of specification.

What happens to my process if the ring wears out?

As the flat surface erodes and the ring thins, the edge sheath drops and ion angles tilt, causing edge critical-dimension drift, profile tilting and loss of within-wafer uniformity. Worn rings also raise particle counts, so edge-of-wafer die are usually the first to fail.

What material is the ring made from?

Rings in this class are produced from high-purity process-compatible materials such as silicon, silicon carbide or quartz, chosen for predictable erosion and low contamination. The ES7099-190 material set is matched to the original part so that erosion behaviour and electrical properties stay consistent with the qualified process.

What is the lead time and how should I stock it?

Typical lead time is 4-5 weeks. Because focus rings are consumed on a predictable cycle, most fabs hold buffer stock sized to their PM interval and replenish against this lead time so a chamber is never held waiting for an edge ring.

Summary

The TEL focus ring 360-T3.4-FLAT (OEM P/N 2L10-251877-11), supplied by ESCT Fab Support as ES7099-190, is a flat-profile, 360 mm class, T3.4 thickness consumable that surrounds the 300 mm wafer on the lower electrode of a TEL plasma etch chamber. It extends the electrode, confines and shapes the edge plasma, provides a controlled RF return and acts as a sacrificial barrier protecting costly chamber hardware. Because it erodes continuously and directly controls edge etch uniformity, profile and particle performance, it is a high-turnover part where dimensional accuracy, material quality and dependable supply all matter. As a new, second-source, form-fit-function equivalent with a 4-5 week lead time, ES7099-190 helps fabs sustain edge yield while managing cost of ownership and single-source risk.

Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 2L10-251877-11. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.

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