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The DPS Cathode is the lower-electrode assembly that supports the wafer and couples radio-frequency bias power into the plasma within Applied Materials Decoupled Plasma Source (DPS) etch chambers configured for 200 mm wafers. In the DPS architecture, plasma density is generated by an inductive source coil mounted above a dielectric dome, while ion energy at the wafer surface is controlled independently by RF power applied through this cathode. That decoupling of density from energy is the defining feature of the platform, and the cathode is the component through which the energy half of that control is delivered.
This particular cathode is the metal-type variant, intended for the metal-etch process modules within the DPS family rather than the dielectric or poly configurations. It comprises the conductive electrode body, the wafer-seating surface and the integrated path that carries bias RF up to the chuck region, and it interfaces with the chamber clamping, cooling and grounding hardware that surrounds it. Because it sits directly beneath the wafer, its condition has an immediate and measurable effect on etch uniformity, bias coupling and particle performance.
As a high-duty consumable-adjacent assembly exposed to aggressive halogen chemistries, sputtered metal by-products and continuous thermal and RF stress, the DPS cathode is a part that fabs replace on a planned basis. Sourcing a verified, form-fit-and-function replacement such as ESCT P/N ES1011-003 allows engineering teams to keep 200 mm DPS chambers in qualified production without the cost and lead-time exposure of a single-source OEM order.
Within the DPS chamber the cathode performs several roles simultaneously, acting as the mechanical wafer support, the RF bias electrode and part of the thermal and electrostatic control system that defines the process environment at the wafer surface.
The cathode body is a conductive metal-type electrode finished to tight flatness and surface specifications so that it presents a consistent, low-defect plane to the wafer and to the plasma sheath above it. The metallurgy and surface treatment are chosen to withstand prolonged exposure to chlorine- and fluorine-bearing metal-etch chemistries while maintaining stable RF coupling characteristics.
Because the cathode sits in the bias RF path and conducts the wafer thermal load, its bulk and interfaces are engineered for stable electrical and thermal performance over thousands of process cycles. Consistent contact resistance and heat transfer are what keep etch rate, profile and uniformity inside their qualified windows.
Because the cathode directly determines how bias energy and heat reach the wafer, its condition propagates straight into device-level results. A worn, eroded or poorly seated cathode is a frequent root cause of drift that is difficult to diagnose from process data alone.
Continuous ion bombardment and exposure to reactive halogen chemistry gradually erode the electrode surface, while sputtered metal by-products redeposit around the wafer edge and seating area. Over time this changes surface flatness and electrical character, shifting etch uniformity and generating particles when redeposited films delaminate.
As the RF feed and ground interfaces age, contact resistance can rise or become unstable, producing localised heating, arcing or inconsistent bias coupling. Symptoms include impedance-match drift, intermittent RF reflected-power alarms and etch-rate variation that does not respond to normal process tuning.
Wear or contamination at the wafer-seating plane and helium back-side sealing surfaces leads to poor thermal contact and back-side cooling leaks. The result is wafer temperature excursions, helium-flow or pressure faults and a loss of profile control that flags the chamber for service.
Cathode replacement should be carried out by trained personnel following the relevant Applied Materials service documentation for the specific DPS metal-etch configuration. The outline below summarises the typical sequence and is not a substitute for the OEM procedure.
Cathodes are scheduled wear items, so holding a qualified spare is central to keeping 200 mm DPS chambers productive. ESCT supplies ES1011-003 as a verified alternative to single-source OEM procurement, giving fabs more control over cost and availability.
It is the 200 mm metal-type cathode for Applied Materials Decoupled Plasma Source (DPS) etch chambers, cross-referenced to OEM P/N 0010-30134. Because the DPS family includes several process configurations, we recommend confirming your exact chamber and process module with our team before ordering.
No. This is supplied as a new, OEM-compatible replacement part. It is not an original Applied Materials part and is not sold as one; it is verified to match the original to form, fit and function for the 200 mm DPS metal-type application.
It indicates the cathode variant intended for metal-etch process modules within the DPS family, as opposed to dielectric or poly configurations. The metallurgy and surface condition suit the chlorine- and fluorine-based chemistries used in metal etch.
Typical indicators are drifting within-wafer uniformity or etch rate, rising particle counts, RF reflected-power or match instability, and wafer-temperature or helium back-side faults. Visible surface erosion or redeposition during preventive maintenance is also a clear trigger for replacement.
The current quoted lead time is approximately 8 weeks. We recommend planning cathode replacement into your scheduled maintenance and holding a spare so a single failure does not interrupt qualified production.
Yes. Provide your tool family, chamber configuration and the OEM part number you are matching, and our technical team will confirm that ES1011-003 is the correct cathode for your application before you commit to an order.
The DPS Cathode Assembly (OEM P/N 0010-30134, ESCT P/N ES1011-003) is the 200 mm metal-type lower electrode that supports the wafer and delivers bias RF energy in Applied Materials DPS etch chambers. As a part directly responsible for ion energy, thermal contact and sheath uniformity, its condition governs etch uniformity, profile control, particle performance and ultimately yield. Because it is a scheduled wear item exposed to aggressive metal-etch chemistry, RF stress and thermal cycling, a verified replacement held as a spare underpins chamber availability. ESCT supplies this cathode as a cost-managed, form-fit-and-function-verified alternative with technical support and a defined lead time.
Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Applied Materials part number 0010-30134. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Applied Materials, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.
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