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The DPS Cathode with integrated Cathode Electrostatic Chuck (CESC) is the wafer-bearing pedestal that forms the powered base of an Applied Materials Decoupled Plasma Source (DPS) etch chamber. In the DPS architecture, plasma density is generated by an inductively coupled source coil at the top of the chamber, while ion energy at the wafer is controlled independently by RF bias applied through this cathode. The assembly therefore performs two roles at once: it clamps and thermally manages the 200 mm wafer through an electrostatic chuck, and it delivers the bias power that sets the directionality and energy of ions arriving at the wafer surface.
This particular variant is configured for the DPS Poly (polysilicon gate) etch process, where precise control of profile, selectivity to the underlying gate oxide and across-wafer uniformity is critical. The cathode integrates the chucking electrode, the RF feed, helium backside-cooling channels and the temperature-control interface into a single serviceable assembly that seats into the lower chamber body.
Because the cathode sits directly in the plasma and carries both high-voltage chucking potential and RF bias, it is one of the most heavily duty-cycled assemblies in the chamber. Its condition has a direct and measurable effect on clamping reliability, wafer temperature stability and ultimately etch result, which is why fabs running legacy 200 mm DPS Poly tools treat a known-good spare cathode as a standing line item.
Within the DPS Poly chamber, the cathode is the structural and electrical foundation on which the wafer rests. It must hold the wafer flat and stationary, conduct RF bias into the plasma sheath, and remove process heat, all while presenting a chemically resistant surface to an aggressive halogen plasma. Its core functions include:
The CESC electrode generates the electrostatic force that pins the wafer to the chuck surface. Reliable performance depends on the integrity of the dielectric layer, the chucking electrode and the high-voltage feed, together with a clean, low-impedance RF path so that bias power couples efficiently into the wafer rather than being lost as stray coupling or heating elsewhere in the assembly.
Helium delivered to the wafer backside bridges the small physical gap between wafer and chuck, dramatically improving heat transfer to the temperature-controlled cathode body. Effective sealing of the wafer to the chuck and unobstructed helium channels keep wafer temperature within process window throughout the etch.
Because the cathode controls both how the wafer is held and how bias energy is delivered, its condition propagates directly into device results. A degraded cathode rarely fails cleanly, it more often drifts, producing subtle excursions that are difficult to diagnose and costly in scrapped wafers:
Continuous plasma exposure and repeated high-voltage cycling erode the chucking surface over time. Surface erosion, cracking or pinhole formation in the dielectric leads to weak clamping, localised arcing and eventual loss of the electrostatic hold, which is the most common reason a cathode is retired from service.
A worn chuck surface or a compromised wafer seal allows backside helium to leak into the chamber. The result is a rising helium leak-up rate, loss of thermal coupling and wafer temperature excursions, often flagged by the tool as a backside-pressure or leak fault during clamp.
Loosened or oxidised RF and ground connections raise impedance in the bias path, causing unstable or non-repeatable etch behaviour. Charge trapped in a degraded dielectric can also cause residual clamping, where the wafer fails to release cleanly at end of process and risks misplacement or breakage during handoff.
Replacement of the DPS cathode is a vented-chamber procedure that should be carried out by trained service personnel following the relevant AMAT maintenance documentation for your tool. The general sequence is as follows:
As 200 mm DPS Poly tools age, a cathode failure can idle an entire etch chamber while a replacement is sourced. Holding a verified spare turns an unplanned multi-day outage into a scheduled swap. ESCT Fab Support helps fabs keep these legacy platforms productive by offering:
It is the powered pedestal that holds the 200 mm wafer by electrostatic chucking, delivers RF bias to control ion energy at the wafer, and manages wafer temperature through backside helium cooling during the DPS polysilicon etch process.
No. This is supplied as a new, OEM-compatible part that is verified to match the original to form, fit and function. It is not an original Applied Materials OEM part, but it cross-references to OEM P/N 0010-17221 for use in the DPS Poly chamber.
It is configured for 200 mm wafers in the DPS Poly (polysilicon) etch application, where precise profile control and selectivity to the underlying gate oxide are required.
There are 2 units currently in stock, so the part is available for prompt dispatch rather than carrying an extended manufacturing lead time. Contact ESCT Fab Support to confirm current availability for your order.
Common indicators include wafer-dechuck or helium-leak faults, rising backside helium leak-up rate, drifting wafer temperature, arcing events, and across-wafer non-uniformity in critical dimension or etch rate that cannot be resolved by recipe adjustment.
Yes. As a plasma-facing, RF-coupled component, the cathode should be installed during a vented-chamber service, leak-checked, and the chamber qualified on monitor wafers to confirm clamping, temperature control and etch performance before returning to production.
The DPS Cathode with CESC electrostatic chuck (OEM P/N 0010-17221, ESCT P/N ES1011-004) is the wafer-holding, RF-biased pedestal at the heart of the AMAT DPS Poly etch chamber. It clamps the 200 mm wafer, sets ion energy through RF bias and stabilises wafer temperature with backside helium cooling, making its condition decisive for clamp reliability, etch uniformity and yield. With form, fit and function verified compatibility and 2 units in stock, it offers fabs running legacy 200 mm DPS tools a practical, immediately available route to keeping an etch chamber in production.
Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Applied Materials part number 0010-17221. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Applied Materials, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.
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