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The Talon Inner Electrode is the central, wafer-facing electrode segment that sits at the heart of a LAM Talon-platform plasma etch chamber. Designated by OEM part number 716-069688-005 and supplied by ESCT Fab Support as part number ES2099-024, this component functions as the inner cathode, the powered or grounded electrode surface directly beneath and around the production wafer. Its job is to shape the electric field, conduct RF energy into the plasma, and define the boundary conditions that govern how reactive ions arrive at the silicon surface during high-aspect-ratio and critical-dimension etch steps.
In a dual-electrode etch architecture, the chamber is divided into an inner region that addresses the bulk of the wafer area and an outer region that manages the wafer edge and exclusion zone. The inner electrode occupies the inner region and is one of the most thermally and chemically stressed consumables in the tool. Manufactured from high-purity silicon, it is consumed gradually by ion bombardment and fluorine- or chlorine-based chemistries, which is precisely why it is treated as a scheduled replacement item rather than a permanent fixture.
Because the inner electrode sits directly in the plasma sheath, even small changes in its surface condition, flatness or electrical contact translate into measurable shifts in etch rate, uniformity and defect counts. Maintaining a qualified, dimensionally accurate inner electrode is therefore central to keeping a Talon chamber inside its process window and protecting wafer yield.
The inner electrode performs several simultaneous roles that combine electrical, thermal and chemical functions into a single consumable. It is not a passive spacer; it is an active part of the RF circuit and the gas-delivery and confinement scheme of the chamber.
As a silicon plasma-facing consumable, the inner electrode is judged on two related axes: the intrinsic quality of the silicon and the geometric and surface finish that determine how it behaves once installed. Both must be controlled to deliver repeatable etch results across the life of the part.
The electrode is produced from high-purity, low-metallics silicon so that material sputtered from its surface does not introduce metal contamination onto the wafer. High purity also gives predictable etch-by-product behaviour and consistent fluorine consumption, which keeps the plasma chemistry stable as the part erodes over thousands of wafers.
Flatness, thickness and the finish of the plasma-facing surface directly affect electrical contact and field uniformity. A part machined and finished to the original specification seats correctly against the electrode body, maintains the designed gap geometry and avoids localised hot spots or arcing.
Because the inner electrode governs the largest portion of the wafer’s plasma exposure, its condition is felt across nearly every etch metric the fab tracks. A degraded or out-of-spec part rarely fails outright; instead it slowly pushes the process toward the edge of its window.
The inner electrode is a wear part, and recognising how it degrades helps engineers schedule replacement before yield is affected rather than after.
Continuous ion bombardment thins the silicon over time. As the electrode loses material, the plasma gap and RF coupling drift, etch rate trends downward and uniformity degrades. Beyond a threshold thickness the part can no longer hold process and must be replaced.
Non-uniform erosion roughens the plasma-facing surface and can create pits or micro-cracks. These features become sites where deposited film flakes loose, raising on-wafer particle counts and triggering defect excursions long before the part is fully consumed.
Thermal cycling and mechanical stress can crack silicon, while a poor or contaminated contact interface to the electrode body raises local impedance. Both lead to arcing, hot spots and erratic RF behaviour that damage the part and surrounding hardware and can scrap wafers in process.
Replacement should follow the documented LAM maintenance procedure for the specific Talon chamber configuration. The sequence below is a general guide; always defer to the OEM service documentation and your site’s safety protocols.
Because the inner electrode is a recurring consumable, fabs benefit from a reliable second-source supply that holds form, fit and function without the cost and lead-time pressure of single-source procurement. ESCT Fab Support stocks and supplies ES2099-024 as a qualified alternative for this LAM part.
It is the central, wafer-facing cathode that couples RF power into the inner plasma region, defines the inner confinement boundary and provides a high-purity silicon surface that stabilises the etch chemistry. It governs the majority of the wafer’s plasma exposure and therefore strongly influences etch rate, uniformity and particle performance.
No. ES2099-024 is supplied as a new, OEM-compatible second-source part. It is manufactured to match the form, fit and function of LAM OEM P/N 716-069688-005, but it is not an original OEM-branded item and is offered as an independent alternative.
It is made from high-purity, low-metallics silicon. This material choice minimises the risk of metal contamination from sputtered surface material and delivers predictable fluorine scavenging and erosion behaviour across the life of the part.
Watch for drifting etch rate, degrading centre-to-edge uniformity, rising particle or defect counts, or unstable RF match behaviour. Visible thinning, surface roughening, pitting or cracking during preventive maintenance are clear indicators that the electrode has reached the end of its useful life.
The typical lead time for ES2099-024 is 4–5 weeks. We recommend ordering ahead of scheduled preventive maintenance so a qualified electrode is on hand when the chamber is opened, avoiding unplanned downtime.
A correctly installed, in-spec inner electrode should allow the chamber to be re-qualified using your standard post-maintenance recipe. As with any plasma-facing consumable change, the chamber should be seasoned and re-qualified for RF match, particles and uniformity before returning to production.
The Talon Inner Electrode (LAM OEM P/N 716-069688-005, ESCT P/N ES2099-024) is the central silicon cathode that drives plasma behaviour across most of the wafer in a Talon-platform etch chamber. Its purity, dimensional accuracy and surface condition directly determine etch uniformity, defect performance and RF stability, and as a wear part it benefits from a dependable, well-qualified second source. ESCT Fab Support supplies this electrode verified to OEM form, fit and function with a typical 4–5 week lead time, helping fabs maintain process performance while controlling spare-parts cost.
Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Lam Research part number 716-069688-005. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Lam Research, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.
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