SILICON FOCUS RING TE-MODIFY REV.1

PART DETAILS

3D10-201448-11
SILICON FOCUS RING TE-MODIFY REV.1

OEM P/N: 

3D10-201448-11

ESCT P/N: 

ES7099-004

PART TYPE:

2nd Source NEW

OEM: 

TEL
MORE INFO

TEL silicon focus ring TE-Modify Rev.1 (OEM P/N 3D10-201448-11), edge-plasma focus ring for Tokyo Electron 300 mm etch systems

ESCT P/N ES7099-004, silicon focus ring for TEL 300 mm plasma etch process chambers

The TEL Silicon Focus Ring TE-Modify Rev.1, carrying OEM part number 3D10-201448-11 and ESCT part number ES7099-004, is a high-purity silicon consumable that surrounds the wafer at the outermost edge of a Tokyo Electron 300 mm plasma etch process chamber. The “TE-Modify Rev.1” designation indicates a revision-controlled variant of the standard focus ring geometry, profiled to a specific edge-tuning configuration rather than the baseline part. In service, the ring sits concentrically around the electrostatic chuck and the 300 mm wafer, presenting a silicon surface that is co-planar (or deliberately stepped) with the wafer edge so that the plasma sheath continues smoothly past the substrate perimeter.

Few consumables have as direct an effect on edge yield as the focus ring. Because it shares the wafer’s material, silicon, it presents a near-identical impedance and chemistry to the plasma, allowing the sheath to extend over the wafer edge instead of collapsing or bending inward. This keeps the ion trajectories at the outer few millimetres vertical and uniform, which is exactly the region where critical dimension (CD) control, etch depth and profile angle are hardest to maintain. As the ring erodes, this carefully tuned geometry drifts, and the edge exclusion zone widens, so the focus ring is treated as a scheduled-replacement item rather than a permanent component.

This part is supplied by ESCT Fab Support as a second-source, brand-new component manufactured to match the form, fit and function of the original TEL focus ring. It is intended for engineers maintaining TEL 300 mm etch platforms who need a dimensionally faithful, plasma-compatible replacement without committing to OEM lead times and pricing.

Functional role of the focus ring in TEL 300 mm etch platforms

Inside a TEL plasma etch chamber, the focus ring performs several interlocking jobs at once. It is not merely a spacer; it is an active part of the plasma boundary condition that the process recipe was developed around. Its principal functions include the following:

  • Extending the plasma sheath beyond the wafer edge so that ion incidence remains vertical across the full 300 mm diameter, including the critical edge exclusion band.
  • Presenting a silicon surface chemically and electrically matched to the wafer, preventing impedance discontinuities that would otherwise distort etch rate and profile at the perimeter.
  • Confining and shaping the plasma over the active wafer area, contributing to overall uniformity and stability of the discharge.
  • Protecting the electrostatic chuck, edge hardware and chamber surfaces beneath and around it from direct ion bombardment and etchant attack.
  • Acting as a sacrificial consumable that erodes in place of more costly chamber components, localising wear to an easily replaced part.
  • Maintaining a consistent RF and electrical environment at the wafer edge so that the process window established during qualification is preserved between maintenance cycles.

Material and process performance

Silicon purity and plasma compatibility

The ring is fabricated from high-purity silicon, the same base material class as the production wafer. This is a deliberate choice: a silicon focus ring erodes by reacting with the same fluorine- or chlorine-based chemistries used to etch the wafer, releasing volatile by-products rather than shedding metallic or particulate contamination. High purity matters because trace metals at the wafer edge can diffuse into devices and degrade yield, so the silicon grade and surface finish are tightly controlled.

  • Wafer-matched silicon chemistry that keeps edge etch behaviour predictable and recipe-compatible.
  • Low metallic contamination, minimising the risk of edge-die yield loss from sputtered or liberated impurities.
  • Controlled surface finish and flatness so the sheath transition across the wafer-to-ring gap stays smooth.

Profile geometry and the TE-Modify revision

The TE-Modify Rev.1 profile reflects a specific edge-tuning step height, inner-diameter taper and ring thickness optimised for a particular process. These dimensions are what couple the ring into the plasma the way the recipe expects, so even a modest profile change at the inner edge shifts edge CD and tilt. The Rev.1 designation is part of the revision control: matching it means the replacement behaves identically to the part the chamber was qualified with.

  • Revision-specific inner-edge step and taper that set the sheath shape at the wafer perimeter.
  • Controlled overall height and seating diameter for repeatable fit against the chuck and edge assembly.
  • Dimensional fidelity to OEM 3D10-201448-11 so that edge tuning carries over without re-qualification.

Impact on tool performance and yield

Because the focus ring governs the outermost millimetres of every wafer, its condition translates directly into measurable process and yield metrics. A correctly profiled, fresh ring keeps the edge in spec; a worn or mismatched ring quietly erodes edge-die yield long before any hard fault appears. The practical consequences include:

  • Edge critical-dimension uniformity and centre-to-edge etch-rate matching across the wafer.
  • Etch profile angle and sidewall verticality in the edge exclusion region.
  • Effective usable wafer area, since a worn ring forces a wider edge exclusion and fewer good die.
  • Particle and defect performance, which degrades as the eroded silicon surface roughens and flakes.
  • Chamber-to-chamber matching and recipe stability, which depend on every chamber running an identical ring revision.
  • Predictable preventive-maintenance intervals, since erosion rate sets how long a ring holds the edge in specification.

Common wear and failure modes

Erosion and thickness loss

The dominant wear mechanism is steady plasma erosion. Ion bombardment and reactive chemistry consume silicon from the upper surface and inner edge, thinning the ring and rounding the step that shapes the sheath. As thickness drops, the sheath height at the wafer edge falls, ion angles begin to tilt, and edge CD drifts out of specification, the cue for scheduled replacement.

Cracking and thermal fracture

Silicon is hard but brittle. Repeated thermal cycling, mechanical stress during handling, or an uneven seating surface can initiate cracks, which then propagate under cyclic RF and thermal load. A cracked ring can shift position, generate particles, or fragment, and must be removed immediately to protect the wafer and surrounding hardware.

Particle generation and surface roughening

Late in life the eroded silicon surface roughens and can develop loosely bonded material that flakes into the chamber. This drives up on-wafer particle counts and defect density, often appearing as an edge-biased defect signature on inspection. Roughening typically precedes the formal end-of-life threshold and is a useful early indicator that the ring is approaching replacement.

Installation and replacement guidance

Focus ring replacement is a routine but precision-sensitive preventive-maintenance task. Because the ring’s position and seating directly affect edge plasma behaviour, cleanliness and correct fit matter as much as the part itself. A typical sequence is:

  • Vent the chamber and follow TEL lockout, RF-isolation and safe-access procedures before opening the process module.
  • Carefully lift out the worn focus ring, noting its orientation, and inspect the chuck and edge seating surface for residue, particles or damage.
  • Clean the seating area per the approved chamber-clean procedure so the new ring sits flat with full, even contact.
  • Handle the new silicon ring only with clean, lint-free gloves or approved tooling, avoiding edge impacts that could initiate cracks.
  • Seat the ring concentrically in its correct orientation, confirming it is fully home with no rocking, gap or tilt.
  • Reassemble the chamber, pump down, and run leak-check, season and conditioning steps as required by the process.
  • Verify edge performance with a qualification or monitor run, and reset the ring’s RF-hours or wafer-count life counter.

Spare parts strategy for TEL 300 mm etch fleets

Focus rings are high-turnover consumables, so reliable supply and consistent quality drive both cost-of-ownership and yield stability. Sourcing through ESCT Fab Support gives maintenance and procurement teams a dependable alternative to single-source OEM dependency:

  • Brand-new, second-source silicon rings verified to the form, fit and function of OEM 3D10-201448-11.
  • Revision-aware supply, matched to the TE-Modify Rev.1 profile so chamber matching is preserved.
  • Cost savings against OEM list pricing on a frequently replaced consumable, improving cost-per-wafer.
  • Quoted lead time of 4-5 weeks, supporting planned PM scheduling and buffer-stock strategies.
  • Cross-reference support against both the OEM and ESCT part numbers to simplify ordering and stores management.
  • A single point of supply for related TEL etch consumables, easing kitting for scheduled maintenance.

Frequently asked questions

What does this focus ring actually do in the chamber?

It surrounds the 300 mm wafer at the outer edge and extends the plasma sheath past the wafer perimeter. By presenting a wafer-matched silicon surface, it keeps ion trajectories vertical and the etch uniform in the critical edge region, where profile and CD control are otherwise most difficult.

Is this an original TEL OEM part?

No. This is a brand-new, second-source component supplied by ESCT Fab Support and manufactured to match the original TEL part. It is verified to the form, fit and function of OEM P/N 3D10-201448-11 but is not an original OEM-branded item, which is reflected in both its pricing and availability.

What does “TE-Modify Rev.1” mean?

It identifies a specific revision-controlled variant of the focus ring geometry, an edge-tuned profile rather than the baseline ring. Matching the revision matters because the ring’s step, taper and thickness set the edge plasma behaviour, so a like-for-like revision preserves the qualified process and chamber-to-chamber matching.

How do I know when the ring needs replacing?

Most fabs replace focus rings on an RF-hours or wafer-count schedule derived from measured erosion rate. Practical indicators include edge CD or profile drifting toward the specification limit, rising edge-biased particle or defect counts, and visible thinning or surface roughening at the inner edge during PM inspection.

Will fitting this ring require re-qualifying the chamber?

Because it is dimensionally matched to the OEM part and the correct revision, it is intended to drop in without process changes. Standard practice after any focus ring change is still to run the chamber’s seasoning, conditioning and monitor or qualification steps to confirm edge performance before returning to production.

What is the lead time and how should I plan stock?

The quoted lead time is 4-5 weeks. As focus rings are consumed on a predictable PM cadence, we recommend holding buffer stock sized to your replacement interval and reordering against that cadence so you are never waiting on a fresh ring at the point of a scheduled maintenance window.

Summary

The TEL Silicon Focus Ring TE-Modify Rev.1 (OEM P/N 3D10-201448-11, ESCT P/N ES7099-004) is a high-purity silicon edge consumable for Tokyo Electron 300 mm plasma etch chambers. It shapes the plasma sheath at the wafer perimeter to hold edge CD, profile and uniformity within specification, eroding sacrificially as a scheduled-replacement part. Supplied brand-new and second-source, matched to the OEM geometry and the specific TE-Modify Rev.1 revision, it offers a cost-effective, dependable way to keep TEL etch chambers in tune and edge yield protected without OEM single-sourcing constraints.

Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 3D10-201448-11. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.

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