SI TOP RING

PART DETAILS

0200-03559K
SI TOP RING

OEM P/N: 

0200-03559K

ESCT P/N: 

ES1099-002

PART TYPE:

2nd Source NEW

OEM: 

AMAT
MORE INFO

Silicon top ring (OEM P/N 0200-03559K), upper electrode confinement ring for AMAT 300 mm plasma etch systems

ESCT P/N ES1099-002, 2nd source NEW silicon upper ring for plasma-etch chamber service

The Silicon Top Ring is a high-purity silicon consumable that mounts at the upper region of a 300 mm plasma etch process chamber, encircling the gas-distribution face or upper electrode and framing the top boundary of the plasma volume. Manufactured from electronic-grade silicon, it is one of the family of silicon parts (alongside cathodes, electrodes and edge rings) that line the active etch zone and are deliberately exposed to the plasma so that the silicon itself participates in the chemistry rather than allowing the chamber metal to be attacked. As a top-side component it works together with the lower focus and edge rings to enclose the discharge and shape the field that the wafer ultimately sees.

In service this ring is subjected to continuous ion bombardment, fluorine- and chlorine-bearing radical fluxes, ultraviolet emission and repeated thermal cycling. Because it sits above the wafer plane, it influences how the plasma is confined near the chamber lid, how RF current returns through the upper assembly, and how process by-products are managed before they can redeposit on the substrate. Its condition therefore has a direct bearing on etch rate stability, sidewall control and the particle performance of the whole tool.

The ESCT Fab Support equivalent, part number ES1099-002, is supplied as a new second-source ring built to the same form, fit and function as AMAT OEM P/N 0200-03559K. It is intended as a cost-effective replacement consumable for fabs and refurbishers maintaining 300 mm etch chambers, with a typical lead time of 4-5 weeks.

Functional role of the silicon top ring in AMAT 300 mm etch platforms

The Silicon Top Ring is a multi-purpose part: it is simultaneously a structural frame for the upper electrode region, a sacrificial silicon surface that buffers the plasma chemistry, and an electrical element in the RF return path. Its principal functions include the following.

  • Confining the upper boundary of the plasma so that the discharge stays centred over the wafer rather than wandering toward chamber walls.
  • Presenting a clean silicon surface that scavenges reactive fluorine and other radicals, helping to keep the etch chemistry stable and protecting metal surfaces from attack.
  • Providing a controlled RF return and ground reference around the upper electrode so that field symmetry is maintained from wafer to wafer.
  • Helping to set the gas-flow and pumping geometry at the top of the chamber, which influences how by-products are swept away from the active zone.
  • Acting as a sacrificial barrier that takes the brunt of ion bombardment so that more expensive, harder-to-replace assemblies are shielded.
  • Maintaining a repeatable upper-chamber surface condition that supports consistent edge-to-edge etch uniformity across the 300 mm substrate.

Material and process performance

Silicon purity and plasma chemistry

The ring is fabricated from high-resistivity, electronic-grade silicon selected for low metallic and mobile-ion contamination. Purity matters because anything liberated from the ring surface under ion bombardment can land on the wafer; trace metals translate directly into defectivity and device leakage. The silicon also has to behave predictably as it is consumed, since its etch-product budget is part of the overall chamber chemistry.

  • High-resistivity electronic-grade silicon to minimise mobile-ion and metallic contamination of the wafer.
  • Controlled bulk resistivity so the ring presents a consistent electrical load to the RF system.
  • Predictable fluorine scavenging behaviour that keeps the radical-to-ion balance stable through a chamber’s wet-clean interval.
  • Compatibility with the fluorine- and chlorine-based chemistries used in dielectric and conductor etch.

Surface finish and dimensional control

Surface finish and machined dimensions govern both particle performance and how cleanly the ring seats against its mating surfaces. A controlled finish reduces micro-fracturing and slows the rate at which silicon is liberated as particulate, while tight flatness and concentricity tolerances keep the plasma boundary symmetrical and the RF contact uniform around the full circumference.

  • Tightly controlled flatness and concentricity for symmetric plasma confinement and even contact loading.
  • Specified surface finish to limit particle generation and micro-cracking under ion impact.
  • Clean, burr-free edges that reduce localised arcing and field concentration.
  • Dimensional repeatability that allows a fresh ring to drop into a known seasoned-chamber recipe with minimal re-qualification.

Impact on tool performance and yield

Because the Silicon Top Ring frames the upper plasma boundary and shares in the chamber chemistry, its state of wear feeds directly into the metrics fabs care about. A worn, eroded or cracked ring rarely fails abruptly; instead it drifts process performance until results fall outside specification.

  • Etch-rate and uniformity drift as the silicon erodes and the chamber chemistry shifts.
  • Loss of within-wafer and wafer-to-wafer repeatability, widening critical-dimension distributions.
  • Rising particle counts and added defectivity as silicon flakes or micro-cracks shed material.
  • Increased risk of arcing and field asymmetry if RF contact around the ring degrades.
  • Shortened intervals between wet cleans and more frequent chamber re-qualification, eroding tool availability.

Common wear and failure modes

Plasma erosion and thinning

The dominant wear mechanism is gradual erosion of the silicon surface by ion bombardment and chemical etch. Over many RF hours the ring thins, its profile rounds off, and its electrical and confinement behaviour drifts. This is expected consumption rather than a defect, but once thinning passes the point where confinement or RF contact is affected the ring must be replaced.

Cracking and chipping

Silicon is brittle, so thermal cycling, mechanical clamping stress and rough handling during preventive maintenance can all initiate cracks or chips. A cracked top ring is a serious particle source and a potential arcing site; in severe cases fragments can detach into the chamber. Any visible crack, chip or fracture is grounds for immediate replacement.

Deposition build-up and contamination

Etch by-products and polymer can accumulate on the ring surface between cleans. As films thicken they flake, change the local surface chemistry and contribute to drift and particle excursions. Heavy or stubborn deposition, discolouration that will not clean off, or signs of contamination indicate the ring has reached the end of its useful service life.

Installation and replacement guidance

Replacement is normally carried out during scheduled preventive maintenance with the chamber vented and isolated. Because the part is brittle, contamination-sensitive silicon, handling discipline is as important as mechanical fit. The following sequence is typical; always follow the tool owner’s qualified PM procedure and safety rules.

  • Vent the chamber, confirm RF and gas isolation, and allow the upper assembly to reach a safe handling temperature.
  • Remove the upper electrode or lid hardware as required to expose the existing top ring, noting its orientation and any indexing features.
  • Lift out the worn ring and inspect the mating surfaces and RF contact areas for residue, erosion or damage.
  • Handle the new ring with clean, powder-free gloves only, keeping it free of skin oils, particles and tooling marks.
  • Seat the replacement ring squarely on its register, verifying even seating and concentricity with no rocking or gaps.
  • Reassemble the upper hardware to the specified fastener torque, then pump down, leak-check and run the seasoning and qualification recipes before returning the tool to production.

Spare parts strategy for AMAT 300 mm etch consumables

Silicon rings are recurring consumables, so a sound stocking strategy protects tool availability and keeps cost-of-ownership predictable. Sourcing through ESCT Fab Support gives engineering and procurement teams a dependable second source without compromising on the dimensional and material standards the chamber demands.

  • New second-source silicon built to match the OEM ring’s form, fit and function.
  • Cross-referenced to AMAT OEM P/N 0200-03559K under ESCT P/N ES1099-002 for straightforward ordering.
  • A competitive alternative to OEM pricing that lowers per-wafer consumable cost.
  • Predictable 4-5 week lead time to support planned PM scheduling and buffer stock.
  • Supports multi-chamber fleets where ring consumption is high and continuity of supply matters.

Frequently asked questions

What does the silicon top ring actually do in the chamber?

It mounts at the upper region of the etch chamber and frames the top boundary of the plasma. The high-purity silicon confines the discharge, participates in the etch chemistry by scavenging reactive radicals, and provides a clean RF return path, all of which help keep etch uniformity and particle performance stable.

Is this an original AMAT OEM part?

No. This is a new second-source ring supplied by ESCT Fab Support under P/N ES1099-002 and built to match AMAT OEM P/N 0200-03559K in form, fit and function. It is not an original OEM part and is offered as an OEM-compatible replacement consumable.

What material is the ring made from?

It is manufactured from high-resistivity, electronic-grade silicon chosen for low metallic and mobile-ion contamination, controlled bulk resistivity and predictable behaviour under the fluorine- and chlorine-based chemistries used in 300 mm plasma etch.

How do I know when it needs replacing?

Replace the ring when it has thinned or eroded past its wear limit, when etch rate or uniformity drifts out of specification, when particle counts rise, or whenever inspection reveals cracks, chips or contamination that will not clean off. Many fabs also replace it on a fixed RF-hour or PM interval.

What is the lead time for ES1099-002?

The typical lead time is 4-5 weeks. Because the ring is a recurring consumable, many fabs hold buffer stock and align orders with their preventive-maintenance schedule to avoid unplanned downtime.

Will fitting it require chamber re-qualification?

As with any consumable that contacts the plasma, the chamber should be seasoned and the qualification recipes run after replacement to confirm etch rate, uniformity and particle performance before the tool returns to production. Tight dimensional control on the ring keeps this re-qualification straightforward.

Summary

The Silicon Top Ring (AMAT OEM P/N 0200-03559K; ESCT P/N ES1099-002) is a high-purity silicon consumable that frames the upper plasma boundary in 300 mm etch chambers, confining the discharge, buffering the etch chemistry and carrying the RF return. As a sacrificial part it erodes, cracks or accumulates deposition over time, gradually shifting etch uniformity and particle performance until replacement is due. Supplied new by ESCT Fab Support to OEM form, fit and function with a 4-5 week lead time, it offers a dependable, cost-effective second source for fabs and refurbishers maintaining their etch fleet.

Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Applied Materials part number 0200-03559K. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Applied Materials, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.

REQUEST A QUOTE

Fill out the form below to request a quote for the part/s you require, making sure to include the OEM part number.

If the part you are looking for is not listed, get in touch and we will try to source it for you through our wide network of partners and suppliers.