2L10-255881-21
SI GND RING RK5

SI GND RING RK5 (OEM P/N 2L10-255881-21), silicon ground ring for Tokyo Electron etch systems

High-purity silicon ground ring for TEL plasma etch chambers, ESCT P/N ES7099-232

The SI GND RING RK5 is a high-purity silicon ground ring used in Tokyo Electron (TEL) plasma etch process chambers, where it sits concentrically around the wafer and lower electrode to define the electrical and plasma boundary at the wafer edge. As a consumable process component, the ground ring provides a controlled RF return path, supports plasma confinement, and helps maintain etch-rate uniformity across the outermost die, the region most sensitive to edge effects, electric-field distortion, and process drift.

In high-volume etch production, the condition of the silicon ground ring has a direct influence on edge yield. Because it is exposed to continuous ion bombardment and reactive plasma chemistry, the ring erodes over time and is replaced on a defined preventive-maintenance interval. A worn, cracked, or contaminated ground ring can shift the edge etch rate, raise particle counts, and degrade wafer-to-wafer repeatability long before a hard tool fault is triggered.

This item is offered as a 2nd-source new part, manufactured from high-purity silicon to match the form, fit, and function of the original TEL consumable, providing a cost-controlled alternative for fabs managing recurring etch-chamber maintenance.

Functional role of the silicon ground ring in TEL etch chambers

Within a TEL capacitively coupled etch chamber, the silicon ground ring works alongside the electrode, focus ring, and edge hardware to shape conditions at the wafer perimeter. Its primary functions include:

• Providing a stable, low-impedance RF ground return at the wafer edge
• Confining and shaping the plasma sheath over the outer wafer region
• Promoting uniform ion flux and etch rate across edge die
• Shielding underlying chamber hardware from direct plasma erosion
• Maintaining a repeatable electrical boundary as the consumable set ages

Because it is a sacrificial part, the ground ring is engineered to erode predictably while protecting more expensive, longer-life chamber components and preserving process stability between scheduled wet cleans and parts changes.

Material and process performance of the RK5 ground ring

Material purity and particle control

High-purity silicon construction minimises metallic contamination and limits the generation of process-killing particles as the ring erodes. Key benefits include:

• Low trace-metal content to protect device integrity
• Stable bulk resistivity for a consistent RF return path
• Controlled erosion behaviour with reduced flaking and particulate shedding
• Surface finish matched to the OEM consumable specification

Edge etch-rate uniformity

A dimensionally accurate ground ring preserves the electric-field geometry at the wafer edge, supporting:

• Consistent edge-to-centre etch-rate ratios
• Reduced edge tilt and critical-dimension variation on outer die
• Stable process performance across the consumable lifetime

Impact on tool performance and yield

The ground ring sits in one of the most yield-sensitive regions of the etch chamber. A degraded ring may contribute to:

• Edge etch-rate drift and CD non-uniformity on outer die
• Elevated particle counts and defect excursions
• Plasma instability or RF return-path variation
• Shortened intervals between chamber cleans
• Inconsistent wafer-to-wafer and chamber-to-chamber matching

Replacing a worn ground ring with a correctly specified, high-purity silicon part restores edge uniformity, particle performance, and process repeatability.

Common wear and failure modes

Erosion and end-of-life wear

Continuous ion bombardment gradually thins the ring. Symptoms include edge etch-rate drift, changes in process readings, and approaching end-of-life thickness limits defined by the maintenance procedure.

Particle generation and flaking

As erosion advances, surface degradation can release particles, driving defect counts up and shortening the usable interval between cleans.

Cracking or mechanical damage

Thermal cycling, mishandling, or over-torque during installation can crack silicon. A cracked ring can cause arcing, contamination, and immediate process excursions.

Installation and replacement guidance

Replacement should follow TEL-approved chamber maintenance, ESD, and cleanroom handling procedures:

• Power down and lock out the chamber before opening
• Use clean, ESD-safe handling and powder-free gloves throughout
• Inspect seating surfaces and adjacent edge hardware for wear or residue
• Seat the ring evenly and observe specified torque and alignment
• Run the prescribed seasoning/conditioning recipe before production
• Verify edge uniformity and particle performance prior to release

Spare parts strategy for TEL etch consumables

Recurring consumable demand, OEM lead times, and cost pressure make a reliable secondary source useful for fabs running TEL etch tools. ESCT Fab Support provides:

• High-purity silicon parts matched to OEM form, fit, and function
• Inspection and dimensional verification before dispatch
• Cleanroom-appropriate handling and packaging
• Reduced lead time and controlled consumable cost
• Technical support for TEL etch chamber maintenance planning

Frequently asked questions

1. What is the SI GND RING RK5 used for?

It is a silicon ground ring for Tokyo Electron plasma etch chambers. It provides an RF ground return at the wafer edge, confines the plasma, and helps maintain etch-rate uniformity on outer die. It is a consumable part replaced on a defined maintenance interval.

2. Is this an original OEM part?

It is supplied as a 2nd-source new part, manufactured from high-purity silicon to match the form, fit, and function of OEM P/N 2L10-255881-21. It is intended as a cost-effective, fully compatible alternative and is not an original OEM-branded item.

3. How often does a silicon ground ring need replacing?

Replacement intervals depend on chamber, recipe, and run time and are defined by the tool maintenance procedure. As the ring erodes, edge etch-rate drift and rising particle counts indicate it is approaching end of life.

4. What happens if a worn ground ring is left in service?

A worn or cracked ring can cause edge CD non-uniformity, particle excursions, arcing, and reduced chamber matching, which can affect edge yield well before a tool alarm occurs.

5. Can ESCT verify the part before shipment?

Yes. Parts undergo dimensional and visual inspection against the OEM consumable specification, with cleanroom-appropriate handling and packaging prior to dispatch.

6. How quickly can ESCT supply this consumable?

Lead time depends on current inventory. ESCT focuses on short lead times and consistent availability for recurring etch consumables to support planned maintenance.

Summary

The SI GND RING RK5 (OEM P/N 2L10-255881-21) is a high-purity silicon ground ring for Tokyo Electron etch chambers that maintains the electrical and plasma boundary at the wafer edge. By preserving a stable RF return path, controlled erosion, and edge etch-rate uniformity, it directly supports edge yield, particle performance, and chamber matching. Sourcing through ESCT Fab Support provides inspected, OEM-matched consumables with controlled cost and lead time for TEL etch maintenance.

Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 2L10-255881-21. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.

Related parts

• 3D10-253182-11 RING, SI GND FBI
• 2L10-516313-21, SI GND RING MODIFY
• 2L10-250701-11 RING(L), SI GND STEP V2
• 2L10-252701-11 RING, GND(L) SI STEP V2
• 3D87-052882-12, SI RING, PROTECTION(TE GND FLAT)
• 3D87-052882-12, SI RING, PROTECTION(TE GND FLAT)