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The SI Focus Ring (TE Modify, Rev.1, 4t) is a high-purity silicon focus ring used in Tokyo Electron (TEL) plasma etch chambers. It surrounds the wafer at the edge of the electrode, extending the plasma sheath beyond the wafer perimeter so that etch conditions at the outermost die match those at the centre. The “4t” designation indicates the nominal 4 mm ring thickness, and “TE Modify Rev.1” denotes a modified revision of the base focus-ring geometry.
As a consumable, the focus ring is continuously exposed to ion bombardment and reactive plasma and erodes over its service life. Because it shapes the electric field and plasma sheath at the wafer edge, its dimensions and surface condition have a direct effect on edge etch-rate uniformity, critical-dimension control and particle performance.
This item is supplied as a 2nd-source new part, manufactured from high-purity silicon to match the form, fit and function of OEM P/N 3D10-201448-11(U2).
The focus ring works with the electrode and edge hardware to control conditions at the wafer perimeter, providing:
High-purity silicon limits contamination and controls particle generation as the ring erodes:
Accurate ring geometry preserves the field profile at the wafer edge, supporting:
Sitting in a yield-sensitive region, a degraded focus ring may contribute to:
Continuous ion bombardment thins the ring over time, producing edge etch-rate drift as it approaches end-of-life thickness limits.
Surface degradation as erosion advances can release particles, raising defect counts and shortening the usable interval.
Thermal cycling, mishandling or over-torque can crack silicon, causing arcing, contamination and immediate process excursions.
Replacement should follow TEL-approved chamber, ESD and cleanroom procedures:
Recurring consumable demand and OEM lead times make a reliable secondary source useful for TEL etch tools. ESCT Fab Support provides:
It is a high-purity silicon focus ring for Tokyo Electron etch chambers. It extends and shapes the plasma sheath at the wafer edge to maintain etch-rate uniformity on outer die, and is a consumable replaced on a defined maintenance interval.
It is supplied as a 2nd-source new part, manufactured from high-purity silicon to match the form, fit and function of OEM P/N 3D10-201448-11(U2). It is a compatible alternative and is not an original OEM-branded item.
It denotes a modified revision (Rev.1) of the base focus-ring geometry with a nominal 4 mm thickness (“4t”), matched to the referenced TEL part configuration.
It can cause edge CD non-uniformity, particle excursions, arcing and reduced chamber matching, affecting edge yield before a tool alarm occurs.
Yes. Parts undergo dimensional and visual inspection against the OEM consumable specification, with cleanroom-appropriate handling and packaging prior to dispatch.
Lead time depends on current inventory; an indicative 4–5 weeks applies, with a focus on consistent availability for planned etch maintenance.
The SI Focus Ring (TE Modify Rev.1, 4t; OEM P/N 3D10-201448-11(U2)) is a high-purity silicon focus ring for Tokyo Electron etch chambers that maintains the electric-field and plasma boundary at the wafer edge. By preserving controlled erosion and edge etch-rate uniformity, it directly supports edge yield, particle performance and chamber matching. Sourcing through ESCT Fab Support provides inspected, OEM-matched consumables with controlled cost and lead time.
Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 3D10-201448-11(U2). It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.
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