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The Silicon Ground Ring, Lower Step V2 (TEL OEM part number 2L10-250701-11, ESCT part number ES7099-062) is a high-purity silicon consumable that sits in the lower assembly of a Tokyo Electron 300 mm plasma etch chamber, where it forms part of the grounded boundary surrounding the electrostatic chuck and the wafer it carries. The designation “GND” identifies its primary purpose: it is a radio-frequency (RF) ground reference ring, and the “step” geometry in its name describes the machined profile that allows it to nest beneath an outer focus or cover ring while presenting a defined grounded surface to the plasma. The “V2” suffix marks a revised version of the original ring profile, typically introduced by the OEM to refine plasma confinement, contact area or wear life.
In a capacitively coupled etch reactor, the wafer edge is one of the most difficult regions to control. The transition from the powered chuck to the surrounding grounded hardware sets up local electric-field gradients that influence ion trajectory, sheath shape and etch rate within the outermost few millimetres of every wafer. The silicon ground step ring is one of the parts that defines that transition. By providing a clean, conductive, plasma-compatible reference at a precise height, it helps anchor the RF return path and shapes the edge of the plasma so that the process behaves predictably out to the wafer perimeter.
Because it is fabricated from silicon rather than quartz or a ceramic, this ring is intended to be both electrically active and chemically sacrificial. It conducts at process temperature, participates in the plasma’s silicon balance, and is consumed gradually by ion bombardment and fluorine- or chlorine-based chemistries. That dual electrical and consumable role is exactly why it is treated as a scheduled-replacement item rather than a permanent structural component.
Within a TEL 300 mm etch chamber, the lower step ground ring performs several overlapping electrical and process functions at the same time. It is rarely a single-purpose part; instead it ties together grounding, confinement and edge uniformity in one machined silicon component.
As a silicon consumable in a grounding role, this ring must satisfy two distinct sets of requirements simultaneously: it must behave correctly as an electrical conductor at process conditions, and it must endure the chemical and physical attack of the plasma without shedding particles or distorting. Material selection, doping and surface finish are therefore as important as the machined dimensions.
The ring is produced from high-purity, controlled-resistivity silicon so that it grounds reliably and contributes only the intended silicon to the discharge. Trace metallic contamination is tightly limited, because any metal liberated at the wafer edge can diffuse into devices and cause yield loss. Consistent resistivity keeps the RF return path from drifting between rings, keeping edge etch behaviour stable across consumable changes.
The stepped surfaces, seating face and inner and outer diameters are machined to tight tolerances so the ring beds correctly against the chuck assembly and the ring above it. A smooth, defect-free surface limits localised erosion and reduces the number of sites where particles can nucleate. Flatness and step height are critical, because even small deviations change the gap geometry that sets the edge sheath and therefore alter edge etch rate and uniformity.
Although it is a relatively small ring, the condition of the silicon ground step has a direct and measurable influence on process results, particularly for the dies closest to the wafer edge. As the ring erodes or its grounding contact degrades, the symptoms show up first as edge non-uniformity and then as wider chamber instability.
Like all silicon edge consumables, the ground step ring has a finite, recipe-dependent life. Understanding how it fails helps engineering teams set sensible replacement intervals and avoid surprise excursions.
Continuous ion bombardment and chemical etching slowly remove silicon from the exposed surfaces. Over time the step recedes and the sharp machined edges round off, changing the gap geometry that controls the edge sheath. This is the dominant, expected wear mechanism and is the usual reason for scheduled replacement before edge uniformity drifts out of specification.
The ring relies on clean, consistent contact with the chuck assembly to maintain its RF ground. By-product films, oxidation or particulate trapped at the seating face can raise contact resistance, leading to an unstable return path, higher reflected power and erratic edge behaviour. This failure mode is often mistaken for a chemistry problem until the seating interface is inspected.
Silicon is brittle, so mishandling during installation, thermal stress or an over-eroded thin section can produce cracks or chips. Once the surface is compromised, the ring becomes a particle source and can fail catastrophically, contaminating the wafer and forcing an unplanned chamber clean. Any visible crack or chip is grounds for immediate replacement.
Replacement should follow the equipment owner’s approved procedure and be performed by trained personnel under proper contamination controls. The sequence below describes the typical steps for exchanging a silicon ground step ring during preventive maintenance.
Silicon edge consumables are used continuously and replaced on a fixed schedule, so a dependable supply protects tool uptime. ESCT Fab Support helps fabs manage this with sourcing focused specifically on TEL plasma etch hardware.
It provides a precise, grounded silicon surface around the electrostatic chuck that completes the RF return path and shapes the plasma at the wafer edge. Its stepped profile sets the vertical relationship between the powered and grounded surfaces, which directly influences edge sheath shape, etch uniformity and plasma confinement.
No. This is a second-source, new part supplied by ESCT Fab Support. It is manufactured to match the form, fit and function of the original TEL ring (OEM P/N 2L10-250701-11) but it is not an original OEM-branded component. It is intended as a compatible replacement for the equivalent OEM consumable.
Silicon is chosen because the ring must be electrically conductive to serve as an RF ground and must participate in the plasma’s silicon and fluorine balance at the wafer edge. Quartz or alumina would be insulating and would change both the grounding behaviour and the edge chemistry, so silicon is the correct material for this grounding and confinement role.
Replacement is usually driven by accumulated RF hours or wafer count defined in your preventive-maintenance plan, and confirmed by inspection. Visible step recession, rounded edges, roughened surfaces, any cracking or chipping, or a drift in edge etch uniformity and rising particle counts all indicate the ring has reached the end of its useful life.
V2 denotes a revised version of the original ring design. OEM revisions of edge consumables typically adjust profile, step height, contact area or material handling to improve plasma confinement, edge uniformity or wear life. This part corresponds to the V2 configuration of OEM P/N 2L10-250701-11 and should be matched to chambers specified for that revision.
The typical lead time is 4-5 weeks. Because this ring is a scheduled consumable, we recommend forecasting usage from your maintenance intervals and maintaining a buffer stock so that replacements are always on hand ahead of planned chamber work, avoiding unplanned downtime.
The Silicon Ground Ring, Lower Step V2 (TEL OEM P/N 2L10-250701-11, ESCT P/N ES7099-062) is a high-purity silicon consumable that grounds, confines and stabilises the plasma at the wafer edge in TEL 300 mm etch chambers. Its electrical role as an RF ground and its sacrificial role as a silicon edge part make it a critical, scheduled-replacement item for edge uniformity, particle control and yield. Supplied by ESCT Fab Support as a second-source new part with a 4-5 week lead time, it offers fabs a cost-effective, reliably sourced alternative for keeping etch chambers in stable, qualified production.
Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 2L10-250701-11. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.
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