OEM P/N:
ESCT P/N:
PART TYPE:
OEM:
The Silicon Ground Ring (Lower), Stepped V2 is a high-purity silicon consumable that sits within the wafer-edge assembly of Tokyo Electron (TEL) 300 mm plasma etch process chambers. Designated by TEL part number 2L10-252701-12 and supplied by ESCT Fab Support under part number ES7099-221, this component provides a grounded silicon surface at the periphery of the electrostatic chuck region, where it forms part of the radio-frequency (RF) return path and helps shape the plasma sheath above the outer edge of the wafer.
As the “lower” ground ring in a stepped configuration, this part nests beneath or radially outboard of the focus ring and cover-ring stack, presenting a controlled, conductive silicon boundary to the plasma. The stepped (V2) profile is a revised geometry that defines a precise step height between the wafer plane, the focus ring and the surrounding grounded silicon, tuning how plasma is confined at the edge and how ion flux terminates as it approaches the chamber periphery. In a typical TEL etch consumable set this ring works alongside the focus ring, edge ring, cover ring and the silicon cathode or upper electrode to deliver uniform etch behaviour right out to the wafer bevel.
Because it is fabricated from silicon rather than a dielectric ceramic, the ground ring matters electrically as well as physically. It offers the plasma a sacrificial silicon surface at ground potential, stabilising the local sheath, providing a low-impedance RF return and acting as a consumable that erodes in place of more costly chamber hardware. Its condition has a direct bearing on edge etch rate, edge critical-dimension (CD) uniformity and particle performance, making it one of the consumables that fab engineers schedule for routine inspection and replacement.
Within a TEL 300 mm capacitively coupled etch chamber, the lower silicon ground ring performs several interlocking jobs that together keep the plasma sheath stable and the edge of the wafer behaving like its centre. Its key functions include:
The performance of any silicon edge consumable rests on two pillars: the intrinsic quality of the silicon itself, and the precision of the machined stepped geometry that interfaces with the rest of the consumable stack. This part is engineered to address both.
High-purity silicon is selected for ground rings because it erodes predictably under fluorine- and chlorine-based etch chemistries while contributing minimal metallic contamination to the wafer. A controlled resistivity and low trace-metal content help keep the RF return consistent over the life of the part and avoid introducing defects into edge die. Consistent bulk density and freedom from micro-voids reduce the risk of localised hot-spot erosion and premature particle generation.
The defining feature of this revision is its stepped profile. The step height and the flatness of the seating face determine how the ring registers against the focus ring and chuck assembly, and therefore how the plasma sheath bends at the wafer edge. Tight tolerances on inner and outer diameters, step height and parallelism let the part seat flush, make proper grounding contact and reproduces the intended edge process window.
Because the ground ring sits at the boundary between the wafer edge and chamber ground, its condition ripples directly into process results and fab economics. A worn, contaminated or incorrectly seated ring can produce a range of consequences:
As a plasma-facing silicon consumable, the lower ground ring degrades through a small number of well-characterised mechanisms. Recognising them helps engineers set sensible replacement intervals.
Continuous ion bombardment and chemical attack gradually consume the silicon, recessing the stepped surface and rounding its edges. As the step height changes, the sheath shape at the wafer edge shifts, slowly moving edge CD and etch rate out of specification. This is the dominant, expected wear mode and the primary driver of scheduled replacement.
Silicon is brittle, so thermal cycling, mechanical handling and uneven seating can initiate micro-cracks that propagate into chips or fractures. A cracked ring not only generates particles but can also compromise the grounding contact and, in severe cases, shed debris onto the chuck. Careful handling and correct torque during installation reduce this risk.
Etch by-products and polymer can deposit on the ring’s surface, altering its electrical behaviour and acting as a reservoir for particles. Build-up across the seating interface can also raise contact resistance, disturbing the RF return path. Periodic inspection for discolouration, deposits and flaking is part of routine preventive maintenance.
Replacement should always follow TEL’s documented procedure for the specific chamber and consumable kit. The general sequence below is provided as orientation only and assumes appropriately trained personnel working in a cleanroom environment:
Edge consumables such as the silicon ground ring are replaced on a regular cadence, so securing a reliable, cost-effective supply is central to keeping etch chambers productive. Sourcing ES7099-221 through ESCT Fab Support offers several advantages:
It provides a grounded, sacrificial silicon surface at the wafer edge inside a TEL plasma etch chamber. Through its stepped profile it shapes the plasma sheath at the periphery and completes the RF return path, helping to keep edge etch rate and critical dimensions uniform while protecting more costly hardware behind it.
No. This is supplied as a new, second-source, OEM-compatible component manufactured to match the form, fit and function of TEL P/N 2L10-252701-12. It is not an original Tokyo Electron part and is not sold as one; it is an equivalent replacement intended to perform the same role in the chamber.
The name reflects its primary electrical role: it sits at ground potential and forms part of the RF return path from the plasma. A focus ring is principally about steering ion trajectories at the wafer edge, whereas this lower silicon ring grounds the plasma boundary and confines it, even though both contribute to edge uniformity.
V2 denotes a revised version of the part, typically reflecting a refined stepped geometry. Such revisions are introduced to tune edge process performance or improve consumable life. You should fit the revision that matches your chamber configuration and recipe set, so confirm the correct version against your tool documentation before ordering.
There is no universal interval; replacement depends on chemistry, RF power, duty cycle and the fab’s particle and CD specifications. Most fabs monitor edge uniformity, particle counts and RF parameters and replace the ring once step recession begins to push results toward their control limits. Tracking accumulated RF hours is a common way to plan this.
The typical lead time is 4-5 weeks. Because this is a routinely consumed edge part, we recommend factoring the lead time into your preventive-maintenance planning and holding an appropriate safety stock so that scheduled cleans are never delayed waiting on consumables.
The Silicon Ground Ring (Lower), Stepped V2 (TEL P/N 2L10-252701-12; ESCT P/N ES7099-221) is a high-purity silicon edge consumable for TEL 300 mm plasma etch chambers. It grounds and confines the plasma at the wafer periphery, shapes the edge sheath through its precise stepped profile and erodes sacrificially to protect surrounding hardware. Its condition directly influences edge CD, etch uniformity, RF stability and particle performance, so it is replaced on a planned cadence. Supplied by ESCT Fab Support as a new, second-source, OEM-compatible part with a 4-5 week lead time, it offers a cost-effective, dependable route to keeping etch tools within specification.
Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 2L10-252701-12. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.
Fill out the form below to request a quote for the part/s you require, making sure to include the OEM part number.
If the part you are looking for is not listed, get in touch and we will try to source it for you through our wide network of partners and suppliers.
