RING,FOCUS LAB 360-333-4.5

PART DETAILS

2L10-252673-11
RING,FOCUS LAB 360-333-4.5

OEM P/N: 

2L10-252673-11

ESCT P/N: 

ES7099-214

PART TYPE:

2nd Source NEW

OEM: 

TEL
MORE INFO

Focus ring (OEM P/N 2L10-252673-11), plasma edge-confinement consumable for TEL 300 mm etch systems

ESCT P/N ES7099-214, 2nd source NEW, OEM-compatible focus ring for Tokyo Electron plasma etch chambers

The part designated RING, FOCUS LAB 360-333-4.5 is a focus ring, one of the most heavily duty-cycled consumables inside a Tokyo Electron (TEL) 300 mm plasma etch chamber. A focus ring is the annular component that surrounds the wafer at the outer edge of the electrostatic chuck (ESC), sitting flush with or just proud of the wafer surface so that the plasma sheath does not collapse abruptly at the wafer perimeter. Without it, the discontinuity between the conductive wafer and the surrounding chamber hardware would distort the electric field, bend ion trajectories near the edge and ruin etch uniformity across the outermost die.

In TEL etch platforms the focus ring occupies the transition zone between the wafer clamp and the chamber liner. It is exposed continuously to energetic ion bombardment, reactive fluorine- and chlorine-based chemistries and elevated RF potentials. Because it is consumed by the very process it enables, the focus ring is treated as a scheduled-replacement item rather than a permanent fixture; its dimensions, flatness and electrical properties drift predictably with accumulated RF-on hours, and that drift maps directly onto edge yield.

ESCT Fab Support supplies this focus ring under part number ES7099-214 as a second-source, brand-new item verified to the form, fit and function of TEL OEM P/N 2L10-252673-11. It is intended as a cost-effective, dimensionally faithful alternative for fabs maintaining TEL 300 mm etch fleets that need to protect edge uniformity without carrying single-source supply risk.

Functional role of the focus ring in TEL etch platforms

The focus ring does far more than fill the gap around the wafer. It is an active participant in shaping the plasma sheath and the RF environment at the wafer edge, and its electrical and geometric behaviour determines whether the last few millimetres of silicon meet specification. Its principal functions include the following.

  • Extending the plasma sheath outward beyond the wafer so the sheath boundary stays flat and parallel across the wafer edge, keeping ion incidence vertical.
  • Maintaining consistent ion-flux and ion-energy distribution at the outer die, so edge etch rate and profile match the wafer centre.
  • Providing electrical continuity for the RF field at the wafer perimeter, presenting a controlled impedance so the sheath does not terminate abruptly at the wafer edge.
  • Confining the active plasma over the wafer and protecting the underlying ESC edge, clamp hardware and ceramic surfaces from direct ion attack.
  • Setting the physical step height and gap relative to the wafer, which tunes critical-dimension and profile-tilt behaviour in the edge exclusion zone.
  • Acting as a sacrificial surface that erodes in place of more expensive, longer-life chamber components.

Material and process performance

Focus rings for plasma etch are manufactured from materials chosen for plasma compatibility, electrical behaviour and low particle generation. The choice of material and the precision of its machining govern both how long the ring lasts and how cleanly it performs across that life.

Plasma-resistant material selection

Etch focus rings are commonly produced from high-purity silicon, silicon carbide or quartz, depending on the process chemistry and whether the ring must contribute to or remain inert within the plasma. Silicon and silicon-carbide rings are favoured where chemical compatibility with the wafer and low metallic contamination are critical, because they erode into the same species already present in a silicon-based etch and minimise foreign-material defects. The bulk resistivity of the ring material is selected to give the correct RF coupling at the edge.

  • High-purity feedstock to limit mobile-ion and metallic contamination of the wafer edge.
  • Controlled resistivity for predictable RF coupling and sheath behaviour.
  • Erosion products compatible with the etch chemistry to suppress particle defects.
  • Resistance to thermal shock from rapid RF on/off cycling and chamber thermal gradients.

Dimensional and surface precision

The numeric callouts in the part name, consistent with a nominal 360 mm outer reference, an inner aperture sized to the 300 mm wafer and a thickness on the order of 4.5 mm, reflect how tightly a focus ring is toleranced. Inner-diameter concentricity, flatness and step height relative to the wafer plane directly set the edge electric-field geometry, so the ring is precision-machined and inspected to keep the sheath flat where the wafer ends.

  • Tight inner-diameter and concentricity control to maintain a uniform wafer-to-ring gap all round.
  • Flatness and parallelism so the ring seats evenly on the ESC and contacts the RF return cleanly.
  • Controlled surface finish to limit micro-masking, arcing initiation sites and particle shedding.
  • Consistent thickness so the initial step height matches the process recipe baseline.

Impact on tool performance and yield

Because the focus ring controls the edge sheath, its condition propagates directly into device results on the outer rings of die, often the most yield-sensitive region of a 300 mm wafer. A worn, cracked or incorrectly seated ring shows up first as edge-to-centre non-uniformity long before it causes an obvious tool alarm.

  • Edge etch-rate and critical-dimension drift as the ring erodes and its step height changes.
  • Profile tilt and feature bowing at the wafer edge from a distorted sheath boundary.
  • Rising particle counts and defectivity as the ring surface roughens or flakes.
  • RF impedance shifts that can affect matching, reflected power and process repeatability.
  • Loss of edge-exclusion-zone die and reduced overall wafer yield.
  • Increased risk of arcing damage to the ESC if the ring cracks or no longer shields the chuck edge.

Common wear and failure modes

Erosion and step-height loss

The dominant ageing mechanism is gradual erosion under ion bombardment. As material is sputtered away, the ring thins, the step height relative to the wafer changes and the sheath geometry shifts. This slow drift degrades edge uniformity progressively, which is why focus rings are tracked against RF-on hours and replaced before they fall out of process window.

Cracking and thermal fatigue

Repeated rapid heating and cooling during RF cycling, combined with the brittleness of silicon, silicon-carbide and quartz, can initiate cracks, particularly from edge chips or seating-surface stress. A cracked ring can shed large particles, create arcing paths and, in the worst case, fragment and damage the wafer or chuck.

Contamination, deposition and arcing

Polymer and by-product films can build up on the ring surface, then flake to generate defects, while localised charge concentration on a worn or contaminated ring can trigger micro-arcing. Arcing pits the ring and nearby hardware and injects metallic or particulate contamination onto the wafer edge.

Installation and replacement guidance

Focus-ring replacement should follow the tool owner’s qualified preventive-maintenance procedure and be carried out by trained personnel under appropriate vacuum and ESD controls. The sequence below summarises good practice; always defer to the site PM specification.

  • Vent the chamber, isolate RF and follow lock-out/tag-out before opening the process module.
  • Remove the worn ring carefully, noting its orientation, and inspect the ESC edge and RF contact surfaces for erosion, deposition or damage.
  • Clean the seating surfaces per procedure so the new ring sits flat with reliable electrical contact and no trapped particles.
  • Unpack the new ring in a clean environment using powder-free gloves, handling only the edges to avoid contamination and surface damage.
  • Seat the ring in its correct orientation, verifying concentricity to the wafer pocket and full, even contact with no rocking or gaps.
  • Close the chamber, pump down and run any required seasoning or burn-in recipe to stabilise the surface before production.
  • Reset the consumable life counter and confirm edge uniformity with a qualification wafer before releasing the tool.

Spare parts strategy for TEL 300 mm etch fleets

Because focus rings are consumed on a predictable schedule, they are ideal candidates for a managed second-source spares programme. ESCT Fab Support supplies ES7099-214 to help fabs keep TEL etch chambers running without over-committing to a single supply channel.

  • Brand-new, second-source parts verified to the form, fit and function of TEL OEM P/N 2L10-252673-11.
  • A cost-effective alternative that reduces single-source dependency on a high-turnover consumable.
  • Predictable supply to support planned preventive-maintenance cycles and buffer-stock strategies.
  • Indicative lead time of 4-5 weeks, supporting forward ordering against scheduled PM intervals.
  • Clear ESCT cross-referencing (ES7099-214) for straightforward stores and BOM management.

Frequently asked questions

What does this focus ring do in a TEL etch chamber?

It surrounds the wafer at the edge of the electrostatic chuck and extends the plasma sheath beyond the wafer so the sheath stays flat and ions strike vertically at the perimeter. This keeps edge etch rate, critical dimension and profile consistent with the wafer centre, while shielding the chuck from direct ion attack.

Is this an original OEM part?

No. ES7099-214 is supplied as a brand-new, second-source part that is OEM-compatible with TEL P/N 2L10-252673-11 and verified to its form, fit and function. It is not an original TEL OEM component and is not sold as one.

How often does a focus ring need to be replaced?

Replacement is driven by accumulated RF-on time and process chemistry rather than calendar time. Fabs track each ring against a consumable-life counter and swap it during scheduled preventive maintenance once erosion begins to push edge uniformity towards the limits of the process window.

What material is the ring made from?

Etch focus rings are typically high-purity silicon, silicon carbide or quartz, selected for plasma compatibility, controlled resistivity and low contamination. The exact material is matched to the chamber and process so that erosion products remain compatible with the etch chemistry and particle generation is minimised.

How will I know the ring is worn out?

The earliest sign is usually edge-to-centre process drift (a change in edge etch rate, critical dimension or profile) followed by rising particle counts. Visible thinning, chipping, cracking or arcing pits seen during preventive maintenance confirm that the ring has reached end of life.

What is the lead time for ES7099-214?

The indicative lead time is 4-5 weeks. Because focus rings are consumed on a predictable schedule, ordering ahead against your planned PM intervals is recommended so replacement stock is on hand before the installed ring reaches its limit.

Summary

The focus ring supplied as ESCT P/N ES7099-214 (TEL OEM P/N 2L10-252673-11) is a precision edge-confinement consumable for Tokyo Electron 300 mm plasma etch chambers. By extending and flattening the plasma sheath at the wafer edge, controlling RF coupling and protecting the electrostatic chuck, it safeguards edge uniformity and yield on the most defect-sensitive region of the wafer. As a brand-new, second-source, OEM-compatible part with a 4-5 week lead time, it lets fabs maintain TEL etch fleets reliably while reducing single-source supply risk on a high-turnover consumable.

Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 2L10-252673-11. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.

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