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The TEL Focus Ring identified by the laboratory designation 360-318-5.5 and OEM part number 2L10-252764-11 is a consumable plasma-confinement component used in Tokyo Electron 300 mm plasma etch process chambers. It is an annular ring that sits in the chamber periphery, surrounding the wafer at the outer edge of the electrostatic chuck. In this position it forms part of the dielectric and conductive environment that shapes the plasma sheath above the wafer, directly influencing how ions arrive at the substrate surface near its boundary.
Within a TEL capacitively coupled etch chamber, the focus ring is one of a small family of edge consumables (focus rings, edge rings, cover rings and insulator rings) that together establish the electrical and physical transition from the powered wafer area to the grounded chamber wall. Because the wafer edge is where sheath geometry naturally distorts, the focus ring exists specifically to extend the uniform plasma region outward, past the silicon, so that the outermost die experience the same flux, energy and directionality of ions as die at the wafer centre.
Although physically simple, the focus ring is a high-impact, high-wear part. It is sacrificially eroded by ion bombardment and fluorine- or chlorine-based chemistries during normal operation, and its dimensions, captured in the “5.5” thickness reference of the part name, are tuned so that fresh and partially worn rings hold the sheath in the correct shape across the maintenance interval. As erosion changes that geometry, edge etch results drift, which is why this ring is one of the most frequently scheduled replacement items in any TEL etch fleet.
The focus ring’s job is to make the wafer “look” electrically larger than it is, so that the plasma sheath does not bend inward at the silicon edge. By presenting a controlled dielectric and impedance profile just outside the wafer, the ring keeps ion trajectories vertical and the etch rate constant all the way to the wafer perimeter. Its core functions in a TEL etch chamber include:
A focus ring in a TEL etch chamber must survive continuous ion bombardment and aggressive halogen plasmas while keeping its profile and electrical character stable. The material choice is dictated by the process chemistry: silicon and silicon carbide rings are common in conductor and silicon etch, while quartz and ceramic variants appear in dielectric processes. Whatever the base material, the ring must offer predictable, slow erosion and low particle shedding.
The ring is engineered to erode slowly and evenly so that sheath geometry stays within tolerance for the full maintenance interval. Tight control of thickness and flatness, the dimensional intent behind the 360-318-5.5 reference, gives consistent edge behaviour from one ring to the next and a repeatable wear curve over its service life.
Because the ring sits at the wafer edge, any flaking, micro-cracking or redeposited material lands directly in the device area. Clean, dense material and a controlled surface finish minimise particle generation and metallic contamination, protecting yield on the outermost die where defect sensitivity is already high.
The condition of the focus ring is one of the most direct levers on edge yield in a TEL etch chamber. Because it governs the sheath shape over the outer few millimetres of the wafer, a worn or out-of-spec ring shows up immediately in edge measurements and excursion data. Practical consequences include:
The dominant wear mechanism is steady sputter and chemical erosion of the ring’s top surface and inner edge. As the “5.5” thickness dimension reduces, the sheath gradually pulls inward and edge etch results drift. This is expected, predictable wear and is the primary reason the ring is replaced on a scheduled wafer-count or RF-hour basis.
Repeated thermal cycling, mechanical handling and localised plasma loading can crack or chip the ring, particularly at the thin inner step. Cracks change the local electrical boundary, create particle sources and can lead to sudden edge uniformity failures rather than the slow drift of normal erosion.
Polymer and etch by-products can build up on the ring surface, eventually flaking off as particles or causing micro-arcing at the wafer edge. A ring that is incorrectly seated, contaminated underneath, or paired with a worn mating ring will also distort the RF return path and produce non-uniform, unrepeatable edge results.
Focus ring replacement is a routine but precision-sensitive preventive-maintenance task. Always follow the applicable TEL maintenance procedure and your fab’s safety and contamination protocols. A typical sequence is as follows:
Because focus rings are scheduled consumables, fabs running TEL 300 mm etch tools must hold reliable stock to protect chamber availability. ESCT Fab Support supplies this ring as a second-source, new, OEM-compatible part so you can secure supply, manage cost and keep maintenance on schedule without sole-source dependency. Working with ESCT for this part offers:
It surrounds the wafer at the edge of the chuck and shapes the plasma sheath so that ions reach the wafer perimeter as uniformly and vertically as they do at the centre. In effect it extends the usable plasma region beyond the silicon, protecting edge die etch quality and shielding the chuck from direct plasma erosion.
No. This is a second-source, new part supplied by ESCT Fab Support under reference ES7099-229. It is manufactured to be compatible with TEL OEM P/N 2L10-252764-11 and is verified to the same form, fit and function, but it is not an original OEM-branded component.
Replacement is driven by erosion, so intervals are set by wafer count, RF hours or measured edge-uniformity drift rather than a fixed calendar period. Each process and chamber has its own wear rate; follow your established preventive-maintenance limits and trend edge data to set the right interval for your application.
As the ring thins, the sheath bends inward at the edge, causing edge etch-rate and critical-dimension drift, tilted profiles on perimeter die and rising particle counts. Left unchecked this leads to edge yield loss, process excursions and, in the worst case, unplanned downtime and scrapped wafers.
The typical lead time is 4-5 weeks. Order using ESCT reference ES7099-229, quoting OEM P/N 2L10-252764-11 to confirm the match. We recommend planning orders around your maintenance schedule and holding buffer stock for this consumable to avoid tool downtime.
Yes. Because the ring is part of the edge electrical and physical environment, any ring change should be followed by chamber conditioning and qualification. Confirm edge uniformity and particle performance against your specification before returning the tool to production after fitting a new ring.
The TEL Focus Ring 360-318-5.5 (OEM P/N 2L10-252764-11, ESCT P/N ES7099-229) is a sacrificial plasma-confinement consumable that surrounds the wafer in Tokyo Electron 300 mm etch chambers. By shaping the plasma sheath at the wafer edge, it keeps ion flux uniform and vertical across the perimeter, protects the underlying chuck and directly governs edge etch uniformity, particle performance and edge die yield. As a scheduled wear item, it must be held in stock and replaced on a controlled interval to keep TEL etch chambers in qualification. ESCT Fab Support offers it as a new, second-source, OEM-compatible ring with a 4-5 week lead time, providing a dependable, cost-effective supply route for this critical etch consumable.
Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 2L10-252764-11. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.
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