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The TEL focus ring designated 312-T6G50L (Tokyo Electron OEM part number 2L10-252692-11) is a consumable plasma-confinement component fitted to the periphery of the electrostatic chuck inside Tokyo Electron 300 mm plasma etch process chambers. As a focus ring, it surrounds the 300 mm wafer and forms the immediate annular boundary between the wafer edge and the surrounding chamber hardware. Its principal job is to extend the plasma sheath and the etch field beyond the silicon edge so that dies at the outermost radius of the wafer see the same ion flux, sheath shape and etch chemistry as dies at the centre.
In a high-density etch chamber, the focus ring sits in one of the most aggressive locations in the entire tool. It is bombarded continuously by energetic ions, exposed to reactive fluorine, chlorine and bromine chemistries, and held at elevated temperature for the full duration of every plasma step. The “LAB 2S” notation in the raw part name reflects the specific layout, surface and segment configuration of this variant; the geometry is matched to a particular chamber generation and recipe set so that the sheath transition at the wafer edge is reproducible from wafer to wafer and from chamber to chamber.
Because the ring is sacrificial by design, it erodes during normal production and must be replaced on a defined interval. A correctly specified, dimensionally accurate ring keeps edge-die yield high; a worn, mismatched or out-of-tolerance ring is one of the most common root causes of edge etch-rate drift, tilted features and particle excursions. ESCT Fab Support supplies ES7099-206 as a second-source new component manufactured to the form, fit and function of the original.
The focus ring is far more than a passive spacer around the wafer. It actively shapes the electric field and plasma sheath at the wafer edge, manages the RF environment of the chuck periphery, and protects the underlying hardware from direct plasma attack. Within the TEL 300 mm etch architecture it performs the following functions:
Focus rings for 300 mm etch are made from materials selected to survive sustained ion bombardment while contributing as few particles and as little metallic contamination as possible. The choice of material and the quality of its surface finish directly determine erosion rate, particle behaviour and the consistency of the electrical edge condition.
The ring must endure continuous exposure to reactive halogen plasmas and energetic ions without releasing contaminants or eroding unpredictably. Edge-ring consumables of this class are typically produced from high-purity silicon, silicon carbide or quartz depending on the recipe; whichever applies, the material is chosen for predictable, low-rate sputter erosion and chemical compatibility.
The electrical and thermal influence of a focus ring is acutely sensitive to its geometry. Inner diameter, height, step profile and flatness all govern how the sheath transitions across the wafer edge, so the ring must be held to tight tolerances and a controlled surface finish.
Few consumables have as direct a line to edge-die yield as the focus ring. Its condition shows up immediately in edge etch-rate signatures, profile angle at the wafer perimeter and particle counts. The consequences of ring condition include:
As a sacrificial component the focus ring is expected to wear, but the way it wears, and how it is monitored, determines whether it is replaced proactively or causes a yield excursion first.
Continuous ion bombardment gradually sputters material from the ring, reducing its height and changing the step profile at the wafer edge. As the ring thins, the sheath drops relative to the silicon, edge ion trajectories bend and edge etch rate drifts. This is the primary, expected wear mechanism and the main reason the ring is replaced on a scheduled interval.
Thermal cycling, mechanical shock during handling, or stress concentrated at a thinned section can cause the ring to crack or shed chips. A fractured ring is a serious particle source and can disturb the local field, so any visible crack or chip warrants immediate removal regardless of how much erosion life appears to remain.
Polymer and etch by-products accumulate on the ring surface over time. Flaking deposits add particles, while uneven build-up or a poorly seated ring can distort the local RF environment and, in extreme cases, promote arcing at the wafer edge. Surface condition and seating should therefore be checked at every scheduled intervention.
Replacing a focus ring is a routine but precision task. The ring’s electrical behaviour depends on clean, even seating, so handling and cleanliness matter as much as the part itself. Always follow the relevant Tokyo Electron maintenance procedure for the specific chamber; the following sequence summarises good practice:
Focus rings are scheduled consumables, which makes reliable supply and consistent quality central to keeping etch tools productive. Sourcing them through ESCT Fab Support offers practical advantages for fabs and equipment service teams:
It surrounds the 300 mm wafer on the electrostatic chuck and extends the plasma sheath and etch field beyond the silicon edge. This keeps ion trajectories vertical and etch rate uniform at the outermost dies, while confining the plasma and protecting the chuck periphery from direct ion bombardment.
No. ES7099-206 is supplied as a second-source new component, manufactured and verified to match the form, fit and function of TEL OEM P/N 2L10-252692-11. It is a compatible new part and is not an original Tokyo Electron OEM-branded item.
The ring is a sacrificial consumable replaced on a scheduled interval defined by your process. The exact lifetime depends on recipe aggressiveness, RF power and run time, and is usually tracked through erosion measurement and edge etch-rate or particle monitoring. Replace immediately if cracking or chipping is found.
A thinned ring lets the sheath drop relative to the wafer, causing edge etch-rate drift and tilted profiles at the perimeter dies. A cracked or chipping ring becomes a particle source and can distort the local field or promote arcing, risking both yield loss and damage to surrounding hardware.
Focus rings of this class are made from plasma-resistant materials such as high-purity silicon, silicon carbide or quartz, chosen for the specific etch chemistry. Each is selected for predictable low-rate erosion, high purity and chemical compatibility. Confirm the exact material requirement for your chamber and recipe with ESCT before ordering.
Indicative lead time is 4-5 weeks. To order, quote ESCT P/N ES7099-206 or the TEL OEM number 2L10-252692-11, together with your chamber type and recipe details so the correct ring variant can be confirmed for your application.
The TEL focus ring 312-T6G50L (OEM P/N 2L10-252692-11, ESCT P/N ES7099-206) is a plasma-confinement consumable that controls edge etch uniformity, sheath shape and particle performance in Tokyo Electron 300 mm etch chambers. As a sacrificial part it erodes in normal use and must be replaced on schedule with a dimensionally accurate, plasma-resistant ring to protect edge-die yield and the underlying chuck. ESCT Fab Support supplies it as a verified second-source new component with clear OEM cross-referencing and an indicative 4-5 week lead time.
Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 2L10-252692-11. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.
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