FOCUS RING,TE-MODIFY

PART DETAILS

3D10-201448-11
FOCUS RING,TE-MODIFY

OEM P/N: 

3D10-201448-11

ESCT P/N: 

ES7099-019

PART TYPE:

2nd Source NEW

OEM: 

TEL
MORE INFO

TEL focus ring, TE-Modify configuration (OEM P/N 3D10-201448-11), edge confinement consumable for Tokyo Electron 300 mm plasma etch systems

ESCT P/N ES7099-019, 2nd source NEW replacement focus ring for TEL etch chambers

The TEL Focus Ring in the TE-Modify configuration (OEM P/N 3D10-201448-11) is a plasma-facing consumable that surrounds the 300 mm wafer at the outermost edge of a Tokyo Electron etch chamber. It sits in the immediate periphery of the electrostatic chuck (ESC), bridging the gap between the wafer edge and the surrounding chamber hardware. In that position it extends the electrical and plasma environment of the wafer surface outward, so that the field lines and ion trajectories seen by the last few millimetres of die behave more like those seen at the wafer centre.

The “TE-Modify” designation indicates a focus ring whose profile, height or material stack has been revised from the baseline part to tune edge behaviour, typically to correct edge tilt, recover critical-dimension uniformity, or adapt the ring to a process that runs hotter or at different pressure than the original recipe. Functionally it remains a focus ring: a sacrificial annular component that is consumed by ion bombardment over its service life and is replaced on a scheduled or metrology-driven basis.

Because the focus ring directly governs the sheath shape over the wafer edge, it is one of the most yield-critical consumables in a TEL etch chamber. As the ring erodes, the plasma sheath above the edge bends, ion incidence angle drifts away from vertical, and edge features begin to tilt or close. Maintaining the correct ring profile and replacing it at the right interval is therefore central to keeping edge die within specification.

Functional role of the focus ring in TEL etch platforms

In a Tokyo Electron capacitively coupled etch chamber, the focus ring is the component that makes the wafer edge electrically and geometrically continuous with the wafer interior. Without it, the plasma sheath would collapse sharply at the wafer perimeter and edge etching would be unusable. Its principal functions are:

  • Extending the plasma sheath radially outward so the electric field over the outer die remains as vertical as possible, keeping etch features straight to the wafer edge.
  • Confining the plasma over the active wafer area and shielding the ESC periphery, clamp ring and chamber surfaces from direct ion attack.
  • Providing a controlled RF return and impedance environment around the wafer perimeter, which stabilises the edge potential and the local etch rate.
  • Acting as the sacrificial wear surface that absorbs edge ion bombardment, protecting more expensive parts such as the ESC and electrode beneath it.
  • Setting the edge gas conductance and thermal boundary, which influences edge temperature and by-product transport at the wafer rim.
  • Delivering the TE-Modify profile adjustment that re-tunes edge tilt and CD without requiring changes to the recipe or chamber hardware.

Material and process performance

A focus ring lives in one of the harshest microenvironments in the fab: it is the part most directly exposed to accelerated ions, reactive radicals and elevated edge temperature, all while it must remain dimensionally and electrically consistent across hundreds or thousands of wafers. Material selection and dimensional control are what separate a ring that holds edge yield from one that drifts.

Plasma and erosion resistance

Focus rings of this type are produced from high-purity plasma-grade materials (commonly silicon, silicon carbide or quartz depending on the process chemistry) chosen so that erosion products are compatible with the etch and do not introduce foreign-species contamination. The TE-Modify variant is supplied to the modified dimensional and material specification rather than the baseline ring.

  • High-purity feedstock to limit metallic and particulate contamination of the wafer edge.
  • Controlled erosion behaviour so the ring thins predictably rather than spalling or flaking.
  • Resistance to fluorine- and chlorine-based chemistries used in dielectric and conductor etch.
  • Surface finish that minimises arc initiation sites and particle generation.

Dimensional and electrical consistency

Ring height, inner diameter and the step relative to the wafer plane determine sheath geometry over the edge. The TE-Modify profile is held to tight tolerance so that the as-installed ring reproduces the intended edge behaviour from the first wafer.

  • Tightly toleranced height and inner diameter to set a repeatable sheath step at the wafer edge.
  • Flatness and concentricity control to avoid azimuthal (angle-to-angle) etch variation.
  • Consistent bulk resistivity and dielectric properties for a stable RF return path.
  • Matched seating surfaces so the ring rests uniformly on the carrier or ESC periphery.

Impact on tool performance and yield

Because edge die make up a disproportionate share of the chips on a 300 mm wafer, the condition of the focus ring translates almost directly into edge yield. A correctly profiled ring keeps the outer ring of die in specification; a worn or wrong ring writes its signature straight into the wafer edge.

  • Edge critical-dimension and etch-depth uniformity track ring height; as the ring erodes, edge CD drifts.
  • Feature tilt at the wafer edge increases as the sheath bends over a worn ring, threatening profile and overlay budgets.
  • A degraded ring becomes a particle source, raising defectivity and reducing first-pass yield.
  • Run-to-run and chamber-to-chamber matching suffer when rings are at different points in their wear life.
  • Unplanned ring failure forces an unscheduled chamber open, costing throughput and re-qualification time.

Common wear and failure modes

Progressive erosion and height loss

The dominant wear mode is gradual thinning under ion bombardment. As the ring loses height, the sheath above the wafer edge bends, edge etch rate and CD shift, and feature tilt grows. This is expected, recoverable wear and is the basis for scheduling ring replacement before edge metrology drifts out of specification.

Cracking, chipping and spalling

Thermal cycling, mechanical handling and localised arcing can produce cracks, edge chips or surface spalling. These defects shed particles onto the wafer, distort the local field, and can render the ring unusable well before its erosion limit. Careful handling and gentle seating during installation reduce the risk.

Deposition build-up and arcing

Polymer and etch by-product can accumulate on the ring surface, altering its electrical behaviour and seeding arc sites. Arcing burns localised pits that act as particle sources and disturb the edge sheath. Build-up that cannot be cleaned within the maintenance cycle is a signal that the ring should be retired.

Installation and replacement guidance

Focus ring replacement is a routine preventive-maintenance task but one that directly affects edge yield, so it should follow the TEL maintenance procedure for the specific chamber. The following sequence reflects general best practice:

  • Vent the chamber, confirm it is at a safe temperature, and follow lockout/tagout and the tool’s energy-isolation procedure before opening.
  • Remove the worn focus ring carefully, noting its orientation, and inspect the ESC periphery, seating surfaces and any carrier for residue, damage or eroded material.
  • Clean the seating area per the maintenance specification so the new ring rests flat and concentric with the wafer plane.
  • Handle the new TE-Modify ring (OEM P/N 3D10-201448-11) only with clean, lint-free gloves and approved tooling, keeping plasma-facing surfaces free of fingerprints and particles.
  • Seat the ring in the correct orientation, verifying it is fully and evenly engaged with no rock, tilt or gap around its circumference.
  • Close the chamber, pump down, leak-check, and run the prescribed season/conditioning recipe to stabilise surfaces before production.
  • Qualify with edge metrology and a particle check, then log the install date and wafer count to anchor the wear-tracking schedule.

Spare parts strategy for TEL etch consumables

Focus rings are consumed continuously, so a reliable, qualified supply keeps etch chambers in production and avoiding edge-yield excursions. ESCT Fab Support supplies this ring as a second-source new component verified to form, fit and function, giving fabs a sourcing alternative without compromising performance.

  • Second-source new part verified to the form, fit and function of OEM P/N 3D10-201448-11 in its TE-Modify configuration.
  • Catalogued under ESCT P/N ES7099-019 for fast, unambiguous reordering.
  • A cost-effective alternative to single-source OEM procurement for a high-turnover consumable.
  • Supports consignment and scheduled-replenishment arrangements that match focus-ring consumption rates.
  • Backed by ESCT technical support for compatibility and installation questions.
  • Quoted lead time of 4-5 weeks to support planned maintenance and buffer-stock strategies.

Frequently asked questions

What does this focus ring do in a TEL etch chamber?

It surrounds the 300 mm wafer at the chamber edge and extends the plasma sheath and field outward, keeping ion trajectories vertical over the outer die. This preserves edge etch uniformity and feature profile, while shielding the ESC periphery and providing a controlled RF return at the wafer rim.

Is this an original OEM part?

No. This is supplied as a second-source new part, verified to the form, fit and function of TEL OEM P/N 3D10-201448-11. It is not an original Tokyo Electron OEM part and is offered as a compatible alternative for fabs seeking a qualified second source.

What does the “TE-Modify” designation mean?

It indicates a modified focus-ring configuration whose profile, height or material stack has been revised from the baseline ring, typically to correct edge tilt or recover CD uniformity for a particular process. It remains a focus ring and is built to the modified specification rather than the standard part.

How do I know when the ring needs replacing?

Replacement is usually driven by accumulated wafer count combined with edge metrology trends, rising edge CD drift or feature tilt, and by visual inspection for cracking, chipping or heavy deposition. Most fabs set a wafer-count limit and confirm it against measured edge performance.

Will installing a new ring require chamber re-qualification?

After any focus-ring change the chamber should be seasoned with the prescribed conditioning recipe and then qualified with edge metrology and a particle check before returning to production, in line with your standard preventive-maintenance procedure.

What is the lead time for this part?

The current quoted lead time is 4-5 weeks. Because the focus ring is a continuously consumed item, we recommend factoring this into buffer-stock planning and scheduled replenishment so chambers are never held up waiting for an edge consumable.

Summary

The TEL Focus Ring in the TE-Modify configuration (OEM P/N 3D10-201448-11, ESCT P/N ES7099-019) is a yield-critical edge consumable for Tokyo Electron 300 mm plasma etch chambers. Seated around the wafer at the ESC periphery, it shapes the plasma sheath over the outer die, confines the plasma, provides a stable RF return and absorbs edge ion bombardment as a sacrificial part. Its profile and erosion behaviour set edge CD, feature tilt and particle performance, tying timely, in-specification replacement to edge yield. Supplied by ESCT as a second-source new component verified to form, fit and function, it offers fabs a dependable, cost-effective sourcing alternative for a high-turnover etch consumable.

Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 3D10-201448-11. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.

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