FOCUS RING 2.6T

PART DETAILS

3D10-201448-21(M)
FOCUS RING 2.6T

OEM P/N: 

3D10-201448-21(M)

ESCT P/N: 

ES7099-063

PART TYPE:

2nd Source NEW

OEM: 

TEL
MORE INFO

Focus ring 2.6T (OEM P/N 3D10-201448-21(M)), edge confinement consumable for TEL 300 mm plasma etch systems

ESCT P/N ES7099-063 | Tokyo Electron (TEL) compatible focus ring | 2nd source NEW

The Focus Ring 2.6T is a chamber consumable fitted to Tokyo Electron (TEL) 300 mm plasma etch process modules, where it sits concentrically around the wafer at the outer perimeter of the electrostatic chuck. Designated by OEM part number 3D10-201448-21(M) and supplied by ESCT Fab Support under part number ES7099-063, this ring is one of the most exposed and most frequently replaced components in the reactor. The “2.6T” suffix denotes a specific thickness and profile variant within the focus ring family, a dimensional detail that directly governs how the plasma sheath bends across the wafer edge during processing.

In a capacitively coupled or reactive-ion etch chamber, the focus ring extends the wafer surface electrically and physically beyond the silicon edge. Without it, the plasma sheath would terminate abruptly at the wafer boundary, distorting the electric field and tilting ion trajectories at the outermost dies. By presenting a continuation of the chuck profile, the ring keeps the sheath flat and the ion flux vertical right out to the wafer edge, preserving feature profiles in the edge exclusion zone where yield is most fragile.

Because it is directly in the path of energetic ions and reactive radicals, the focus ring is a sacrificial part. It erodes over time, and as it thins the sheath geometry shifts, edge etch rates drift, and tilt angle changes. Disciplined replacement of the focus ring is therefore central to maintaining edge-to-edge uniformity and a stable process window across a chamber’s service life.

Functional role of the focus ring in TEL plasma etch platforms

The focus ring performs several interlinked roles that together determine how cleanly the outermost annulus of the wafer is processed. Its functions extend well beyond simply surrounding the wafer:

  • Extends the wafer plane electrically so the plasma sheath remains flat across the edge, keeping ion incidence vertical on the outermost dies.
  • Confines and shapes the plasma over the wafer edge, preventing the discharge from wrapping around or terminating prematurely at the silicon boundary.
  • Provides a controlled RF return and impedance environment at the wafer periphery, helping balance the coupling between the powered electrode and the edge region.
  • Protects the underlying electrostatic chuck, edge seals and ceramic surfaces from direct ion bombardment and chemical attack.
  • Acts as a sacrificial wear surface, absorbing erosion that would otherwise degrade more costly chamber hardware.
  • Establishes a repeatable edge boundary condition so that process recipes transfer predictably from chamber to chamber.

Material and process performance

Focus rings of this type are manufactured from high-purity materials selected for plasma resistance, electrical behaviour and low particle generation. Silicon and silicon carbide are common choices for TEL etch focus rings, with quartz used in some applications, each offering a distinct balance of erosion rate, conductivity and contamination control.

Plasma and chemical resistance

The ring must withstand sustained exposure to fluorine- and chlorine-bearing chemistries, oxygen plasmas and continuous ion bombardment without shedding particles or contaminating the wafer. High-purity construction minimises metallic contamination, while a controlled and predictable erosion characteristic allows the part’s wear to be tracked and compensated through recipe and gap adjustments.

  • High-purity material grade to limit metallic and particulate contamination of the wafer edge.
  • Resistance to halogen chemistries and energetic ion sputtering across long campaigns.
  • Predictable, uniform erosion that supports thickness-based life tracking.

Dimensional and electrical stability

The 2.6T profile is held to tight thickness and flatness tolerances because even small dimensional changes alter sheath shape and edge tilt. Stable resistivity and a consistent surface finish keep the RF return path and field continuity remain repeatable, so each newly installed ring reproduces the established edge process rather than introducing a step change.

  • Tight thickness and flatness control to preserve sheath geometry at the wafer edge.
  • Consistent resistivity for a repeatable RF return and impedance match.
  • Clean, defect-free seating surfaces for reliable thermal and electrical contact with the chuck.

Impact on tool performance and yield

Because the focus ring controls the etch environment at the wafer edge, its condition translates directly into measurable device and productivity outcomes:

  • Edge etch-rate and critical-dimension uniformity, which determine yield in the high-value outer dies.
  • Profile and tilt control at the wafer periphery, preventing sidewall bowing or angled features near the edge.
  • Chamber-to-chamber matching, so multiple tools running the same recipe deliver comparable results.
  • Particle performance, since an eroded or cracked ring becomes a defect source that drives down die yield.
  • Mean time between cleans and overall tool availability, both of which depend on a predictable ring replacement cadence.

Common wear and failure modes

As a sacrificial part, the focus ring degrades in characteristic ways that engineers monitor closely.

Erosion and thinning

Continuous ion bombardment gradually sputters the ring’s surface, reducing its thickness. As the 2.6T profile thins, the local sheath drops and ion tilt at the wafer edge increases, causing edge critical dimensions and etch rate to drift out of specification. This is the dominant, expected wear mode and the primary trigger for scheduled replacement.

Cracking and chipping

Thermal cycling, mechanical handling and arc events can initiate cracks or chip the ring’s edges, particularly as the material thins late in life. Fragments and flakes become particle sources that contaminate wafers, while a cracked ring can disturb the local field and RF return, producing sudden, hard-to-trace edge defects.

Surface roughening and deposition

Polymer and by-product films can build up on the ring while the exposed surface roughens under bombardment. These changes alter the surface condition and emissivity, shift thermal behaviour at the edge and, once films delaminate, release particles. Roughening also accelerates non-uniform erosion, shortening usable life.

Installation and replacement guidance

Replacing the focus ring is a routine but precision task that should follow the TEL maintenance procedure for the specific chamber and always be carried out under cleanroom discipline. A typical sequence is:

  • Vent the chamber, isolate RF, gas and electrostatic-chuck power, and follow lock-out procedures before opening the lid.
  • Remove the worn focus ring carefully and inspect the underlying chuck surface, edge seals and adjacent rings for damage or residue.
  • Clean the seating area to remove polymer and particulate, leaving a flat, debris-free contact surface.
  • Handle the new ES7099-063 ring with clean, powder-free gloves or dedicated tooling, avoiding contact with the active surfaces.
  • Seat the ring fully concentric with the wafer pocket, confirming it lies flat with no rocking, gap or misalignment.
  • Reassemble the chamber, pump down, and run leak-check, season and qualification recipes per the OEM specification.
  • Reset the part-life counter and verify edge uniformity and particle performance on monitor wafers before returning the tool to production.

Spare parts strategy for TEL etch chamber consumables

Focus rings are high-turnover consumables, so a reliable supply keeps etch capacity online. ESCT Fab Support helps fabs secure these parts without being constrained to a single channel:

  • Second-source new parts verified to the form, fit and function of OEM P/N 3D10-201448-21(M).
  • Indicative lead time of 4-5 weeks, supporting planned consumable replenishment and buffer-stock strategies.
  • A defined ESCT reference, ES7099-063, for clean cross-referencing in maintenance and procurement systems.
  • Cost-competitive sourcing that helps reduce the cost of ownership for high-frequency consumables.
  • Supply diversification that lowers exposure to single-supplier shortages and extended OEM lead times.

Frequently asked questions

What does the “2.6T” designation mean?

The “2.6T” suffix identifies a specific thickness and profile variant within the focus ring family for this TEL platform. Thickness is critical because it sets the height of the plasma sheath relative to the wafer edge; the correct variant matches the sheath geometry and edge tilt the established process.

Is this an original OEM part?

No. This focus ring is supplied as a second-source, new OEM-compatible part. It is manufactured and verified to match the form, fit and function of the original component referenced by OEM P/N 3D10-201448-21(M), but it is not an original Tokyo Electron part and is not sold as one.

How often should the focus ring be replaced?

Replacement intervals depend on the chemistry, power and duty cycle of your process. Most fabs track accumulated RF hours or wafer counts and replace the ring once erosion-driven edge drift approaches the process control limit. Monitoring edge uniformity and ring thickness lets you set a cadence specific to your recipe.

How does focus ring wear affect my wafers?

As the ring erodes, the sheath height at the wafer edge falls and ion tilt increases. This shows up as drift in edge critical dimensions, etch rate and feature profile, typically degrading yield on the outermost dies first. A worn or cracked ring can also generate particles.

What is the lead time for ES7099-063?

The indicative lead time is 4-5 weeks. Because focus rings are consumed continuously, we recommend maintaining a buffer stock and placing orders against your projected replacement rate to avoid gaps in availability.

Will installing this ring affect chamber matching?

A correctly specified ring held to the proper thickness and flatness reproduces the established edge boundary condition, so it should not disturb chamber matching. As with any consumable change, run your standard qualification and monitor-wafer checks after installation to confirm edge uniformity and particle performance.

Summary

The Focus Ring 2.6T (OEM P/N 3D10-201448-21(M), ESCT P/N ES7099-063) is a sacrificial edge-confinement consumable for TEL 300 mm plasma etch chambers. By extending the wafer plane and shaping the plasma sheath, it keeps ion incidence vertical at the wafer edge and protects the chuck beneath it, making it decisive for edge uniformity, particle performance and yield on the outer dies. Manufactured from high-purity plasma-resistant material and held to tight dimensional tolerances, it erodes predictably and should be replaced on a disciplined schedule. Supplied as a second-source new part with a 4-5 week lead time, ES7099-063 offers fabs a cost-effective, supply-resilient route to keeping their etch tools running within specification.

Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 3D10-201448-21(M). It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.

REQUEST A QUOTE

Fill out the form below to request a quote for the part/s you require, making sure to include the OEM part number.

If the part you are looking for is not listed, get in touch and we will try to source it for you through our wide network of partners and suppliers.