FOCUS RING 2.6T

PART DETAILS

3D10-201448-21(M)
FOCUS RING 2.6T

OEM P/N: 

3D10-201448-21(M)

ESCT P/N: 

ES7099-065

PART TYPE:

2nd Source NEW

OEM: 

TEL
MORE INFO

TEL focus ring 2.6T (OEM P/N 3D10-201448-21(M)), edge-confinement focus ring for Tokyo Electron 300 mm plasma etch systems

ESCT P/N ES7099-065, 2nd source new, OEM-compatible focus ring for TEL plasma etch chambers

The TEL Focus Ring 2.6T (Tokyo Electron OEM P/N 3D10-201448-21(M)) is a circumferential focus ring that sits at the outermost edge of the electrostatic chuck in a 300 mm plasma etch chamber. It encircles the wafer perimeter, bridging the gap between the silicon edge and the chamber hardware so that the plasma sheath and electric field experienced by the last few millimetres of the wafer mirror, as closely as possible, the conditions seen at die in the wafer interior. The “2.6T” designation reflects a specific ring thickness/profile revision within the focus ring family, a parameter that directly governs how the sheath bends over the wafer edge.

In a TEL etch chamber the focus ring is a sacrificial consumable. It is positioned in the bombardment path, sees the same energetic ions and reactive fluorine- or chlorine-based chemistries as the wafer, and is deliberately eroded so that the wafer is not. As it wears, the ring profile changes, the sheath geometry shifts, and edge etch behaviour drifts, which is why this part is one of the most closely monitored consumables in any high-volume etch operation.

Because the ring defines the electrical and physical boundary of the active wafer area, its material grade, dimensional accuracy and surface finish translate directly into edge critical dimension (CD) uniformity, edge-die yield and particle performance. A correctly specified focus ring extends usable wafer area to the very edge of the substrate; a worn or out-of-spec ring sacrifices the outer annulus of die.

Functional role of the focus ring in TEL plasma etch platforms

The focus ring is far more than a mechanical spacer. It is an active participant in shaping the plasma at the wafer edge, and it carries out several interrelated functions simultaneously:

  • Extends the plasma sheath beyond the physical wafer edge so that ion trajectories at the perimeter remain near-vertical rather than bending inward.
  • Maintains uniform edge critical dimension and etch rate across the outermost few millimetres of the 300 mm wafer, recovering edge-die yield.
  • Provides a controlled, repeatable RF return path and dielectric/impedance boundary at the wafer edge, stabilising the local sheath voltage.
  • Acts as a sacrificial barrier that protects the underlying electrostatic chuck, edge ring stack and chamber hardware from direct ion bombardment and chemical attack.
  • Confines the plasma over the active surface and minimises stray etching of components outboard of the wafer.
  • Helps manage thermal coupling at the wafer edge, contributing to a consistent edge temperature profile during long etch steps.

Material and process performance

Focus rings for TEL etch chambers are manufactured from plasma-grade materials selected for erosion resistance, electrical behaviour and low particle generation. The ES7099-065 is supplied to match the OEM material specification and dimensional envelope so that sheath behaviour and consumable lifetime track the original part.

Plasma and chemical resistance

The ring must withstand sustained exposure to energetic ions and aggressive halogen chemistries without rapid, non-uniform erosion. Material purity and microstructure are critical here, because trace contaminants and grain boundaries become preferential erosion sites that drive surface roughening and particle release.

  • High-purity material to limit metallic and particulate contamination of the wafer edge.
  • Erosion characteristics tuned to give a predictable, repeatable consumable lifetime.
  • Resistance to fluorine- and chlorine-based plasmas without delamination or cracking.

Dimensional and electrical conformance

Ring thickness, inner diameter, step geometry and flatness all influence how the sheath transitions across the wafer edge. The “2.6T” profile must be held to tight tolerance, because even small deviations in height or step relative to the wafer plane shift the edge electric field and degrade edge CD control.

  • Tight control of thickness, inner diameter and step height to match the OEM 2.6T profile.
  • Flatness and seating accuracy for repeatable contact with the chuck and edge stack.
  • Consistent dielectric/conductive behaviour so the RF return path and edge impedance match the original.

Impact on tool performance and yield

Because the focus ring governs the boundary condition for the entire etch, its condition has an outsized effect on results at the wafer edge, and the wafer edge is where the densest, highest-value die often sit on a 300 mm substrate. A degraded or mismatched ring shows up quickly in fab metrics:

  • Edge CD drift and tilt/striation defects as ion trajectories at the perimeter bend inward.
  • Loss of edge-die yield as the outer annulus falls outside specification.
  • Increased particle counts and added-defect events from a roughened, eroded ring surface.
  • Etch rate and selectivity non-uniformity between centre and edge of the wafer.
  • Shortened maintenance intervals and unplanned downtime when wear is not tracked.
  • Process drift that forces recipe re-centring and additional qualification wafers.

Common wear and failure modes

As a deliberately sacrificial part, the focus ring is expected to wear, the engineering challenge is predicting and bounding that wear so it never compromises the wafer. The dominant degradation mechanisms are well understood.

Erosion and profile loss

Continuous ion bombardment progressively erodes the ring, reducing its height and rounding its inner edge. As the profile recedes, the sheath over the wafer edge collapses, ion tilt increases and edge CD drifts, the classic end-of-life signature that defines the replacement interval.

Surface roughening and particle generation

Non-uniform erosion roughens the exposed surface and can liberate particulate, which redeposits on the wafer as added defects. Micro-cracking or flaking, often aggravated by thermal cycling, accelerates this and is a frequent driver of yield excursions before the ring reaches its nominal wear limit.

Thermal and mechanical damage

Repeated heating and cooling cycles, combined with handling during preventive maintenance, can chip or crack the ring or degrade its seating. Poor seating contact disturbs the RF return path and the thermal interface, producing intermittent edge non-uniformity that is difficult to diagnose if the ring is not inspected.

Installation and replacement guidance

Focus ring replacement is a routine preventive-maintenance activity, but it must be carried out cleanly and precisely because seating and orientation directly affect process results. Always follow the relevant TEL maintenance documentation and your fab’s safety procedures. A typical sequence is:

  • Vent the chamber, isolate RF and gas, and place the tool in its approved maintenance state.
  • Don clean-room gloves and use clean tooling to avoid contaminating the new ring; handle by the edges only.
  • Remove the worn focus ring and inspect the electrostatic chuck, edge ring stack and seating surfaces for residue or damage.
  • Clean the seating area per the approved procedure so the new ring beds down fully and squarely.
  • Seat the ES7099-065 ring concentrically, confirming correct orientation and full, even contact with no rocking.
  • Reassemble the chamber, pump down, leak-check and run the prescribed season/conditioning sequence.
  • Qualify with monitor wafers, verifying edge CD and particle performance before returning the tool to production.

Spare parts strategy for TEL etch consumables

Focus rings are high-turnover consumables, so the way they are sourced has a direct impact on cost-of-ownership and tool availability. ESCT Fab Support supplies the ES7099-065 as a second-source, new, OEM-compatible alternative that is verified to form, fit and function, giving fabs a dependable way to control consumable spend without compromising process integrity.

  • New, second-source part matched to the OEM 3D10-201448-21(M) form, fit and function.
  • Cost-effective alternative to single-source OEM purchasing for a frequently replaced consumable.
  • Supports buffer stocking to protect preventive-maintenance schedules and minimise downtime.
  • Quoted lead time of 4-5 weeks to support planning and replenishment cycles.
  • Clear ESCT part identification (ES7099-065) for straightforward reordering and traceability.

Frequently asked questions

What does the “2.6T” in the part name mean?

The “2.6T” denotes a specific thickness/profile revision of this focus ring family. Ring height and step geometry are critical to how the plasma sheath bends across the wafer edge, so a profile-specific designation gives the correct sheath behaviour and edge CD performance for the intended chamber configuration.

Is this an original TEL OEM part?

No. This is a second-source, new part supplied by ESCT Fab Support as an OEM-compatible alternative to Tokyo Electron P/N 3D10-201448-21(M). It is not an original TEL part, but it is manufactured and verified to match the original in form, fit and function.

Why does a worn focus ring hurt edge yield?

As the ring erodes, its profile recedes and the plasma sheath over the wafer edge changes shape. Ions that should strike vertically begin to tilt inward, which distorts edge critical dimension and feature profiles. The outermost die fall out of specification first, so a worn ring reduces usable wafer area and edge-die yield.

How often should the focus ring be replaced?

Replacement intervals are process-specific and depend on chemistry, power and run hours. Most fabs track ring wear against edge CD, particle data and accumulated RF hours, and replace the ring at a qualified end-of-life threshold rather than on a fixed calendar. Follow your established preventive-maintenance criteria for this recipe and chamber.

What is the lead time for ES7099-065?

The quoted lead time is 4-5 weeks. Because focus rings are high-turnover consumables, we recommend maintaining buffer stock and ordering against forecast consumption so that replacements are always on hand for scheduled preventive maintenance.

Will installing this ring require process re-qualification?

As with any focus ring change, the chamber should be seasoned and qualified with monitor wafers before returning to production. Because the ES7099-065 is matched to the OEM profile and material specification, it is intended to drop into the existing qualification flow without recipe re-centring, but standard post-PM verification of edge CD and particles still applies.

Summary

The TEL Focus Ring 2.6T (OEM P/N 3D10-201448-21(M), ESCT P/N ES7099-065) is a sacrificial edge-confinement consumable for Tokyo Electron 300 mm plasma etch chambers. By extending and shaping the plasma sheath across the wafer perimeter, it preserves edge critical dimension, protects the chuck and edge stack, and recovers useful edge-die yield. Its erosion-driven profile loss makes profile-specific dimensional accuracy and material purity essential, and its high turnover makes a reliable, cost-effective supply chain equally important. Supplied as a new, second-source, OEM-compatible part verified to form, fit and function, ES7099-065 helps fabs hold etch edge performance while controlling consumable cost and downtime.

Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 3D10-201448-21(M). It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.

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