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The Monolithic “Talon+” silicon cathode (OEM P/N 716-073979-032) is a single-piece Czochralski (CZ) silicon upper-electrode component used in LAM plasma etch process chambers. The shorthand on the part label (“ELCTD, MONO TALON+, CZ, 18 STEP”) decodes to a monolithic silicon electrode machined from CZ-grown crystal, carrying an 18-step concentric profile on its plasma-facing surface. As a cathode-class electrode, it forms part of the RF electrode stack that couples power into the discharge and helps define the spatial distribution of plasma above the wafer.
In a 300 mm capacitively coupled etch chamber the silicon cathode sits within the powered or counter-electrode assembly, directly facing the wafer across the discharge gap. Because it is silicon rather than a coated metal, it participates chemically as well as electrically: it presents a controlled, consumable silicon surface to a fluorine- and oxygen-bearing plasma while simultaneously conducting RF current and shaping the local field. The 18-step machined relief on the surface is not cosmetic, it tailors the gap profile and the local plasma density radially, which is one of the primary levers an etch engineer uses to flatten etch-rate and critical-dimension uniformity from wafer centre to edge.
Because the Talon+ cathode is a wear item that is gradually consumed by ion bombardment and chemical attack, it is one of the highest-value scheduled-replacement parts in the chamber. Its condition directly governs particle counts, etch repeatability and the length of usable production campaigns between wet-cleans, making a reliable, qualified supply of replacement electrodes a core part of any fab’s consumables strategy.
The Talon+ monolithic cathode performs several overlapping electrical, chemical and mechanical jobs at the top of the discharge. It is simultaneously an RF electrode, a chemically active surface and a precision-machined boundary that defines the discharge gap geometry.
The “CZ” designation tells you the electrode is machined from Czochralski-grown monocrystalline silicon, the same growth route used for device wafers. This matters because purity and crystal quality directly set the particle and metals-contamination budget the electrode brings into the chamber.
The defining feature of the Talon+ geometry is its 18-step concentric machined surface. These stepped zones change the local gap height and therefore the local field and plasma density as a function of radius, giving process engineers fine radial control over etch behaviour.
Because the cathode sits directly in the discharge and faces the wafer, its physical and electrical state is reflected almost immediately in process results. A worn, contaminated or out-of-tolerance electrode degrades the very metrics the chamber exists to control.
The dominant wear mechanism is steady consumption of silicon by ion bombardment and chemical etching. Over a campaign the plasma-facing surface recedes and the carefully machined 18-step profile rounds and shallows, which slowly shifts the gap geometry and degrades the radial uniformity the electrode was designed to deliver.
As erosion progresses, micro-roughening, redeposited films and localised attack can cause the surface to shed silicon particulate. Once particle counts climb, the electrode becomes a defect source on the wafer well before it is fully consumed, often setting the practical replacement point.
Thermal cycling and mechanical or RF stress can initiate cracks in monocrystalline silicon, while poor clamping or contaminated contact surfaces invite localised arcing that pits the electrode. Any handling contamination or trapped moisture also risks introducing metals or particles into an otherwise high-purity surface.
Silicon electrodes are brittle, high-purity components and must be handled in a clean, controlled manner. The following sequence reflects good practice; always defer to the platform’s own service procedure and lock-out/tag-out requirements.
Silicon cathodes are scheduled consumables, so availability and consistency matter as much as the part itself. ESCT Fab Support stocks and sources these electrodes as a qualified second-source alternative, helping fabs control cost and protect uptime without compromising on form, fit and function.
It is the OEM shorthand for a monolithic (“MONO”) silicon electrode (“ELCTD”) of the Talon+ design, machined from Czochralski (“CZ”) crystal silicon and carrying an 18-step concentric profile on its plasma-facing surface. In plain terms, it is a single-piece silicon cathode for a plasma etch chamber.
No. This electrode is supplied as a second-source, new OEM-compatible part. It is verified to match the original in form, fit and function and cross-references to OEM P/N 716-073979-032, but it is not an original OEM-branded component.
A silicon surface participates chemically in the plasma, it helps scavenge free fluorine and stabilise the etch chemistry, while keeping metallic contamination low. A monolithic CZ silicon electrode therefore supports both clean process chemistry and stable RF coupling in a way a metal electrode cannot.
Typical indicators are drifting etch rate or uniformity, shifts in critical dimensions, rising particle counts and increasing difficulty holding the RF match. Most fabs replace the electrode on a defined campaign or PM interval set by process data rather than waiting for full erosion.
The current lead time is 4-5 weeks. Because this is a scheduled consumable, we recommend aligning orders with your preventive-maintenance calendar and holding appropriate buffer stock to avoid unplanned downtime.
Treat it as a brittle, high-purity item. Use powder-free gloves, avoid touching the plasma-facing surface, support it evenly, and tighten clamps to the specified torque and pattern. After fitting, season the chamber and re-qualify the process before returning to production.
The Monolithic “Talon+” CZ silicon cathode (OEM P/N 716-073979-032, ESCT P/N ES2099-055) is a single-piece, high-purity silicon upper electrode for LAM plasma etch chambers. Its 18-step machined profile tunes radial plasma density to hold etch-rate and CD uniformity, while its CZ silicon surface stabilises etch chemistry and keeps contamination low. As a consumable wear item, its condition directly drives uniformity, particle performance and uptime, which is why a qualified, well-stocked second-source supply is so useful to high-volume etch operations.
Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Lam Research part number 716-073979-032. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Lam Research, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.
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