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The Core Inner Electrode, LAM OEM part number 716-069688-005, is the central silicon cathode element that sits at the heart of the powered electrode assembly in a Lam Research capacitively coupled plasma (CCP) etch chamber. It is the inner section of a segmented electrode stack, located directly beneath or surrounding the wafer plane, and forms part of the conductive surface through which radio-frequency power is delivered into the process gas to strike and sustain the plasma. Because it occupies the innermost zone of the cathode, its condition governs the behaviour of the plasma over the central region of the wafer.
In a segmented electrode design, the “inner” electrode is distinguished from the surrounding outer ring or edge components, allowing the chamber to be tuned for radial uniformity. The core inner electrode therefore acts both as an RF-coupling surface and as a plasma-facing consumable, exposed continuously to ion bombardment, reactive fluorine and chlorine chemistries and elevated thermal load. As a high-purity silicon component, it is also a sacrificial chemistry contributor that participates in the etch process rather than simply containing it.
Within the wider chamber, the part works in concert with the outer electrode, focus and edge rings, the upper electrode or showerhead and the electrostatic chuck. Its flatness, resistivity and surface finish all feed directly into etch rate, etch profile and the particle budget of every wafer that passes through the chamber, which is why it is treated as a scheduled-replacement consumable rather than a permanent fixture.
The core inner electrode performs several overlapping roles that combine electrical, chemical and thermal duties at the centre of the chamber. Each of these contributes to how cleanly and repeatably the central area of the wafer is processed.
As a cathode core that both carries RF and participates in the chemistry, the electrode relies on tightly specified silicon material properties. These properties determine how cleanly it couples power and how little it contaminates the process.
The geometry and finish of the plasma-facing surface are as important as the bulk material, since they set the sheath profile and the particle performance of the electrode.
Because the core inner electrode governs the central plasma zone, its condition propagates directly into device-level results. A worn, contaminated or poorly seated electrode shows up quickly in process monitors and in final yield.
Continuous ion bombardment and reactive-gas attack steadily consume the plasma-facing silicon, thinning the electrode and changing its surface profile. As material is lost the sheath geometry shifts, etch rate at the centre drifts and the part eventually reaches an end-of-life thickness beyond which uniformity can no longer be tuned back in.
Roughening of the eroded surface and the build-up of polymer or by-product films can lead to flaking, where loosely adhered material detaches and lands on the wafer. This is a leading cause of defect-driven yield loss and is often the practical trigger for replacement, even before the electrode is fully consumed.
Thermal cycling and mechanical stress can crack the brittle silicon, while degraded seating or contamination at the backing interface raises contact resistance and creates localised hot spots. Both conditions promote arcing, which damages the electrode surface, destabilises the plasma and can scrap the wafers in process at the time of the event.
Replacement should follow the OEM maintenance procedure for the specific chamber and be carried out by trained personnel under proper contamination control. The sequence below summarises good practice for a consumable inner electrode.
Inner electrodes are scheduled consumables, so keeping verified replacements on hand is central to controlling cost of ownership and avoiding extended downtime. ESCT Fab Support supplies this electrode as a qualified alternative to sole-sourcing from the OEM.
It is the central silicon cathode element of the powered electrode assembly. It couples RF power into the process gas, shapes the plasma sheath over the centre of the wafer, provides part of the RF return path and acts as a sacrificial high-purity silicon surface within the etch chemistry.
No. This is a second-source new component supplied by ESCT Fab Support as an OEM-compatible equivalent to LAM P/N 716-069688-005. It is not an original LAM part, but it is verified to match the original in form, fit and function.
Typical indicators include rising particle counts, drift in centre-to-edge etch uniformity, increased arcing events and the electrode reaching its end-of-life thickness through erosion. Most fabs replace it on a scheduled preventive-maintenance interval tied to RF hours or wafer count.
Silicon provides the right electrical resistivity for stable RF coupling while contributing predictably to the fluorine-based etch chemistry. High purity minimises metallic contamination of the wafer, and a controlled microstructure helps the electrode erode evenly rather than pitting or flaking prematurely.
The indicative lead time is 4-5 weeks. Because the electrode is a planned consumable, we recommend ordering against your preventive-maintenance schedule and holding a buffer stock to protect tool availability.
When the material and dimensions match the original, the electrode behaves consistently from chamber to chamber, which supports fleet matching. As with any consumable change, qualify the part on one chamber and confirm etch rate, uniformity and particle data before rolling it out across the fleet.
The Core Inner Electrode (LAM P/N 716-069688-005, ESCT P/N ES2099-039) is the central silicon cathode that delivers RF power and shapes the plasma over the middle of the wafer in a Lam Research plasma etch chamber. Its purity, resistivity, flatness and surface finish drive etch uniformity, profile control and particle performance, while erosion, flaking, cracking and arcing define its service life. Supplied by ESCT Fab Support as a verified second-source new consumable, it offers a cost-effective, readily reorderable alternative to single-source procurement for fabs maintaining 300 mm etch capacity.
Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Lam Research part number 716-069688-005. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Lam Research, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.
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