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The Inner CEL cathode is the inboard segment of the silicon upper-electrode (cell) assembly used in Tokyo Electron (TEL) 300 mm capacitively coupled plasma etch chambers. Within the TEL nomenclature, “CEL” denotes the electrode cell that forms the powered or reference surface facing the wafer, and the “INNER” designation identifies the central disc that sits directly above the device area of the wafer, surrounded by an outer ring segment. The “SH-OX1.75” descriptor points to a shower-head style, oxide-process configuration with a defined edge geometry, consistent with a high-purity silicon electrode tuned for dielectric and oxide etch recipes.
As a cathode-class consumable, this component is one of the most directly plasma-exposed parts in the chamber. It is continuously bombarded by reactive fluorocarbon species and energetic ions, and in many TEL configurations it doubles as a gas-distribution surface, feeding process chemistry uniformly across the wafer through an array of fine holes. Because the inner electrode governs the plasma directly over the central die population, its condition has an outsized influence on centre-to-edge etch uniformity, polymer management and on-wafer particle counts.
ESCT Fab Support supplies the Inner CEL cathode under part number ES7099-005 as a second-source, new component manufactured to match the form, fit and function of TEL OEM part 3D10-250316-11. It is intended as a planned-replacement consumable for fabs seeking supply security and cost control on high-wear etch electrodes without compromising the silicon purity and dimensional fidelity that these chambers demand.
In a capacitively coupled etch chamber, the upper silicon electrode and the lower electrode together establish the RF field that sustains the plasma. The Inner CEL segment defines the electrical and chemical environment over the centre of the wafer, and in oxide and dielectric recipes it also acts as a sacrificial silicon source that consumes free fluorine and stabilises the fluorocarbon-to-fluorine ratio. Its principal functions include:
The Inner CEL is machined from high-purity silicon to minimise trace-metal contamination and to deliver a consistent erosion signature over the life of the part. In oxide etch, the silicon surface is intentionally consumed by fluorine, so the bulk purity, grain structure and surface finish directly affect how the electrode ages and how clean the process remains.
Because the inner segment mates against the outer CEL ring and the surrounding electrode hardware, its diameter, thickness, edge profile and hole pattern must match the OEM geometry precisely. Even small deviations alter the gap, the gas-flow distribution and the local field, which translates directly into uniformity drift on the wafer.
As the silicon surface most directly responsible for the plasma over the centre of the wafer, the Inner CEL cathode has a strong, measurable effect on process results. A worn, contaminated or mismatched electrode can degrade an otherwise healthy chamber and erode device yield in ways that are difficult to trace if the part is overlooked.
Continuous ion bombardment and fluorine attack steadily thin the silicon face and enlarge the gas-distribution holes. As the surface recedes, the electrode gap and flow conductance shift, gradually pulling centre etch rate and uniformity away from the qualified baseline until the part reaches its end of life.
Thermal cycling and localised hot spots can initiate micro-cracks, and once the silicon weakens it is prone to chipping and flaking, particularly around hole edges and the outer rim. The resulting debris is a direct source of on-wafer particles and killer defects, and severe cracking risks fracture during handling or operation.
Fluorocarbon recipes deposit polymer on the electrode face, and uneven or excessive build-up can clog gas holes, distort the local plasma and create conditions for arcing. Arc events leave pits and burn marks that compromise both electrical contact and surface uniformity, accelerating the decline in process stability.
The Inner CEL cathode should be replaced during scheduled preventive maintenance by trained technicians, observing the OEM service procedure for the specific chamber. The following sequence outlines good practice; always defer to your site documentation and ESH requirements.
Silicon upper-electrode segments are recurring consumables, so holding qualified spares keeps etch tools productive. Sourcing the Inner CEL cathode through ESCT Fab Support gives fabs a dependable alternative supply route with the quality discipline these parts require.
It is the central silicon segment of the upper electrode (cell) assembly. It forms the counter-electrode surface over the middle of the wafer, often distributes process gas through a perforated face, and in oxide recipes acts as a sacrificial fluorine scavenger that stabilises plasma chemistry and central etch uniformity.
No. This is a second-source, new component supplied by ESCT Fab Support under P/N ES7099-005. It is manufactured to match the form, fit and function of TEL OEM P/N 3D10-250316-11, but it is not an original OEM part and is not sold as one.
It sits in direct contact with the plasma, so it is steadily eroded by ion bombardment and fluorine attack. Over time the silicon thins, gas holes enlarge and polymer accumulates, all of which shift the etch result away from baseline and eventually require replacement.
As it erodes, centre etch rate and uniformity drift, selectivity can change, and particle counts may rise from flaking silicon. Because it influences the wafer centre most strongly, a degraded inner electrode is a common cause of centre-to-edge uniformity problems.
Replacement intervals depend on recipe aggressiveness, RF power and total RF hours, so they vary between fabs and applications. Most sites set the interval from accumulated erosion data and particle trends, and schedule the change during planned preventive maintenance. Keeping a qualified spare on hand avoids unplanned downtime.
The typical lead time is 4–5 weeks. Order using ESCT P/N ES7099-005, referencing TEL OEM P/N 3D10-250316-11 and your chamber configuration so our team can confirm fitment before shipment.
The Inner CEL cathode (TEL OEM P/N 3D10-250316-11, ESCT P/N ES7099-005) is the central high-purity silicon segment of the upper-electrode assembly in TEL 300 mm plasma etch chambers. It shapes the plasma over the wafer centre, distributes process gas, scavenges fluorine in oxide recipes and supports the RF return path, making it a critical determinant of uniformity, selectivity and particle performance. As a plasma-exposed consumable it wears predictably through erosion, cracking and polymer build-up, so qualified spares and disciplined preventive maintenance are what deliver it. ESCT Fab Support supplies this electrode as a second-source, new part built to OEM form, fit and function, giving fabs reliable supply at competitive cost.
Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 3D10-250316-11. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.
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