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The Cathode, Si, 777H, 5T is a precision-engineered silicon plasma-facing component used in Tokyo Electron (TEL) semiconductor equipment to support plasma generation, RF energy coupling, and stable process performance in advanced semiconductor manufacturing environments.
Installed within the process chamber as a primary plasma-generation surface, the cathode plays a critical role in establishing the electrical environment required for etch, deposition, and plasma-enhanced semiconductor processes. In applications where plasma uniformity, ion distribution, process repeatability, and defect control directly impact wafer yield, so cathode condition has to stay good.
Because cathodes operate under continuous plasma exposure, ion bombardment, RF electrical stress, thermal cycling, and reactive process chemistries, erosion, dimensional wear, surface degradation, or contamination buildup can contribute to plasma instability, process drift, increased particle generation, or chamber qualification failures. The Cathode, Si, 777H, 5T is engineered to support stable chamber performance under demanding fab operating conditions.
The ESCT equivalent part number for this component is ES7099-027, supplied as a 2nd Source NEW OEM-compatible replacement designed to meet form, fit, and functional requirements aligned with TEL equipment requirements.
The Cathode, Si, 777H, 5T functions as a critical plasma-generation and electrical interface component.
Core functions include:
In many TEL platforms, the cathode may operate alongside related hardware such as focus rings, ground rings, ESC assemblies, shield components, and chamber consumables that collectively support plasma control and process repeatability.
The cathode supports controlled plasma behavior throughout the process cycle.
Key performance characteristics include:
Stable plasma conditions give consistent wafer results.
Material integrity directly affects process consistency.
Performance attributes may include:
Surface condition plays a substantial role in chamber stability and particle control.
Designed for demanding semiconductor production environments.
Durability characteristics may include:
Reliable cathode condition helps maintain chamber qualification and process consistency.
The Cathode, Si, 777H, 5T may operate alongside related chamber components including:
Together these components support broader chamber control and process stability.
The Cathode, Si, 777H, 5T can directly influence chamber performance and equipment availability.
Potential impacts of wear or degradation include:
Replacing a degraded cathode can help restore chamber stability and improve process repeatability.
Continuous plasma exposure may gradually affect cathode performance.
Indicators include:
Electrical characteristics may change as wear progresses.
Symptoms may include:
Surface degradation may contribute to contamination concerns.
Indicators include:
Wear in the cathode may also increase stress on surrounding plasma-facing hardware and chamber consumables.
To support best performance:
The Cathode, Si, 777H, 5T is supplied as an OEM-compatible replacement for TEL semiconductor systems.
Key considerations:
OEM P/N: N/A ESCT P/N: ES7099-027 Part Type: 2nd Source NEW OEM: TEL
Maintaining strategic inventory of the ES7099-027 Cathode, Si, 777H, 5T can reduce downtime exposure and improve maintenance readiness.
It serves as a plasma-facing electrical component that supports plasma generation, RF energy transfer, and process stability within TEL semiconductor equipment.
The cathode directly influences plasma formation, electrical field distribution, and overall process consistency.
High-purity silicon is commonly used for plasma-facing applications because of its process compatibility, electrical characteristics, and ability to support stable chamber conditions.
Common indicators include:
Yes. Surface degradation can alter plasma behavior and contribute to non-uniform wafer processing.
Yes. Material erosion and surface degradation may increase particle generation risks.
Yes. Plasma instability and contamination-related issues can directly impact wafer quality and production yield.
Issues may be identified through PM inspections, plasma diagnostics, RF performance monitoring, particle trend analysis, or chamber qualification results.
Yes. Chamber qualification and process verification should be performed after cathode replacement.
Incorrect geometry, material properties, or dimensions can affect plasma behavior, RF performance, and chamber compatibility.
No. This is supplied as ESCT P/N ES7099-027, a 2nd Source NEW OEM-compatible replacement designed to meet TEL equipment requirements.
Yes. Chamber configuration, material requirements, and dimensional compatibility should always be confirmed.
Yes. ESCT supports compatibility verification aligned with equipment requirements.
Depending on availability, associated focus rings, ground rings, shields, ESC components, and plasma-facing chamber hardware may also be supported.
The Cathode, Si, 777H, 5T is a mission-critical plasma-facing component supporting plasma generation, RF energy transfer, and process stability in TEL semiconductor systems.
Its condition can directly influence process uniformity, contamination control, equipment uptime, and overall wafer yield.
Sourcing through ESCT Fab Support as ES7099-027 provides a verified 2nd Source NEW OEM-compatible replacement with reliable performance, faster availability, and semiconductor-focused technical support.
Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of the referenced Tokyo Electron part. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.
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