OEM P/N:
ESCT P/N:
PART TYPE:
OEM:
The Silicon Top Ring (AMAT OEM P/N 0200-03559K) is an upper, plasma-facing silicon ring that sits at the top of the reaction volume in a 300 mm plasma etch chamber, encircling the gas inlet or upper electrode assembly above the wafer plane. The “(C2)” and “(G)” designators in the raw part name identify the specific chamber configuration and ring revision; the core function remains the same across these variants, to provide a high-purity silicon boundary at the upper periphery of the plasma that both confines the discharge and acts as a sacrificial, scavenging surface.
Unlike the focus ring or edge ring that surrounds the wafer at the cathode, the top ring occupies the opposite face of the plasma sheath. It frames the upper plasma region, helps shape the radial electric field at the chamber ceiling, and presents a fresh silicon surface to the fluorine- and oxygen-bearing chemistries that dominate dielectric and silicon etch recipes. In doing so it influences the gas-phase chemistry, the radial uniformity of reactive species reaching the wafer, and the rate at which the chamber accumulates polymer and particulate contamination.
Because it is consumed by ion bombardment and chemical attack during normal operation, the silicon top ring is a scheduled-replacement consumable. Its condition directly affects etch repeatability, defectivity and the interval between wet-clean and preventive-maintenance events, which is why fabs treat it as a critical, regularly stocked spare rather than an occasional repair item.
In a plasma etch chamber the upper silicon ring performs several overlapping roles, balancing electrical, chemical and confinement duties that together stabilise the discharge and protect the wafer-facing process window:
The ring is machined from high-purity silicon selected for low metallic and dopant contamination, because anything liberated from its surface becomes a potential wafer contaminant. The resistivity and crystalline quality of the silicon govern how the ring couples RF energy and how predictably it erodes. In fluorine-rich chemistries the silicon surface is etched at a controlled rate, consuming free fluorine and stabilising the plasma; this scavenging behaviour is central to why silicon, rather than quartz or a ceramic, is specified for this position.
Machined flatness, edge profile and surface finish are tightly controlled so that the ring seats cleanly and erodes evenly. A consistent finish reduces local field enhancement and micro-arcing, while accurate thickness and concentricity preserve the upper plasma gap. As the ring is exposed to thousands of RF hours the silicon thins predictably; maintaining the original geometry within specification is what allows a replacement to drop in with no recipe re-tuning.
Because the top ring sits in the plasma and participates in the chemistry, its condition propagates directly into wafer-level results. A worn, eroded or contaminated ring shifts the etch environment in ways that show up as process drift and defectivity long before an obvious fault is flagged:
Continuous ion bombardment and chemical attack steadily consume the silicon, thinning the ring and rounding its edges. As the surface recedes, the plasma gap and scavenging capacity change, slowly pushing etch rate and uniformity out of specification. This is the normal end-of-life mechanism and the reason the ring is replaced on a defined consumable schedule rather than run to failure.
Polymer films build up on the ring during processing and can flake away if they grow too thick or if the underlying silicon roughens. Combined with micro-particles released by erosion, this raises chamber defectivity and contributes added-on defects at the wafer. A roughened or heavily redeposited surface is a clear signal that the ring is approaching the end of its useful life.
Silicon is brittle, so thermal cycling, mishandling during service, or improper seating can initiate chips and cracks. Localised arcing, aggravated by contamination, surface damage or poor seating, leaves pits and burn marks that further destabilise the plasma. Any cracked, chipped or arc-pitted ring should be replaced immediately to avoid particle showers and collateral damage to adjacent components.
The silicon top ring should be changed during a scheduled preventive-maintenance window by a trained technician, following the OEM service procedure for the specific chamber. The brittle, contamination-sensitive nature of silicon makes clean handling necessary. A typical sequence is as follows:
Silicon plasma-facing consumables wear on a predictable schedule, so they are ideal candidates for managed stocking. Sourcing the top ring through ESCT Fab Support gives fabs a cost-effective, dependable supply without compromising on form, fit and function:
It is an upper, plasma-facing silicon ring that confines the discharge at the top of the chamber, shapes the radial field and species distribution, and presents a high-purity silicon surface that scavenges free fluorine to keep the etch chemistry stable. It also protects adjacent hardware by acting as a sacrificial surface for ion bombardment and polymer deposition.
No. This is a second-source, new component supplied as an OEM-compatible part. It is manufactured and verified to match the form, fit and function of AMAT OEM P/N 0200-03559K, but it is not an original AMAT-branded part and is not sold as one.
Replacement interval depends on chemistry, power and duty cycle, so it is governed by each fab’s own RF-hour or wafer-count limits and preventive-maintenance schedule. Because the silicon erodes predictably, most fabs replace it on a planned basis rather than waiting for process drift, and they hold spares to support that cadence.
Typical indicators include visible erosion or thinning, edge rounding, surface roughening, arc pits or burn marks, cracking or chipping, and heavy polymer build-up. At the process level, drift in etch rate or uniformity and rising particle counts often signal that the ring is reaching the end of its service life.
Silicon actively participates in the plasma chemistry by scavenging free fluorine, which helps stabilise etch rate and selectivity in a way an inert quartz or ceramic surface would not. Its high purity also means that, as it erodes, it does not introduce harmful metallic contamination into the process.
The standard lead time is 4–5 weeks. We recommend factoring this into preventive-maintenance planning and holding appropriate safety stock so that a worn ring can be replaced promptly during a scheduled service window.
The Silicon Top Ring (AMAT OEM P/N 0200-03559K, ESCT P/N ES1099-012) is an upper, plasma-facing silicon consumable that confines the discharge, shapes the radial field and species distribution, and scavenges free fluorine to keep 300 mm plasma etch processes stable. As a sacrificial part it erodes predictably and protects costly structural hardware, but its condition feeds directly into etch uniformity, defectivity and tool availability, which is why timely, like-for-like replacement matters. Supplied by ESCT Fab Support as a second-source new part verified to form, fit and function, with a 4–5 week lead time, it offers a cost-effective and dependable way to keep etch chambers within their process window.
Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Applied Materials part number 0200-03559K. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Applied Materials, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.
Fill out the form below to request a quote for the part/s you require, making sure to include the OEM part number.
If the part you are looking for is not listed, get in touch and we will try to source it for you through our wide network of partners and suppliers.
