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The Silicon Focus Ring (C2 position, 2.6 mm nominal thickness) is a precision-machined, high-purity silicon consumable that encircles the 300 mm wafer inside a Tokyo Electron plasma etch chamber. It seats on the electrostatic chuck assembly immediately outboard of the wafer edge, where it forms a continuous, electrically and dimensionally controlled extension of the wafer plane. In TEL nomenclature the “C2” designation identifies the specific consumable position within the cathode stack, and the “2.6T” descriptor denotes the part’s as-supplied thickness, a dimension that is deliberately tracked because it directly governs how the plasma sheath bends across the wafer edge.
Because it sits at the boundary between the wafer and the chamber hardware, the focus ring performs a job no other component can: it stretches the active plasma region a few millimetres beyond the silicon being processed, so that the outermost dies see the same ion flux and angular distribution as dies near the centre. Without it, the sheath would collapse abruptly at the wafer edge, tilting ion trajectories and ruining edge etch profiles. As a sacrificial silicon part exposed to continuous ion bombardment and reactive chemistry, the focus ring erodes over its service life and is replaced on a planned cadence.
This page covers the ES7099-011 silicon focus ring offered by ESCT Fab Support as a second-source, new component verified to the form, fit and function of TEL OEM P/N 3D10-201448-21K1, with a typical lead time of 4–5 weeks.
Within a TEL 300 mm etch chamber the focus ring is a multi-purpose interface part. It is simultaneously an electrical extension of the wafer, a mechanical reference surface and a consumable shield that protects more expensive hardware beneath it. Its principal functions include:
A focus ring earns its place in the process recipe through its silicon purity, its dimensional precision and the way both interact with the plasma. The C2 2.6 mm part is engineered so that its material behaviour and as-machined geometry remain predictable across thousands of RF hours.
High-purity silicon is chosen because, in fluorine- and bromine-based etch chemistries, it erodes in a controlled, predictable way and does not introduce metallic contamination. The grade and resistivity are matched to the recipe so the ring participates in plasma chemistry the same way the wafer does. Key material characteristics include:
The 2.6 mm thickness is not incidental, it is a tuning parameter. Ring height relative to the wafer surface sets how far the sheath is lifted at the edge, so flatness, parallelism and inner-diameter tolerances are held tightly to keep edge results repeatable from ring to ring.
Because the focus ring governs the edge few millimetres of every wafer, its condition has an outsized effect on yield, the wafer edge is where a disproportionate share of die loss concentrates. A worn, mismatched or out-of-tolerance ring produces consequences that propagate straight to the yield report:
As a sacrificial part, the focus ring is expected to wear; the engineering goal is to retire it before that wear degrades process results. The dominant mechanisms are as follows.
Continuous ion bombardment steadily thins the ring and rounds its top inner edge. As thickness falls below the design value the sheath lift weakens, edge etch results drift and the ring reaches the end of its RF-hour budget.
Silicon is brittle. Thermal cycling, mishandling during installation, or an uneven seat can initiate cracks or edge chips, which generate particles and can cause catastrophic failure if a fragment lifts during processing.
Over time the plasma-facing surface roughens and accumulates redeposited films. These layers can flake, raising particle counts and altering the local RF load, which shifts edge uniformity even before the ring is fully eroded.
Replacement is a routine preventive-maintenance activity, but the edge sensitivity of the part demands care and cleanliness. Follow the TEL maintenance procedure for the specific chamber; the general sequence is as follows.
Focus rings are scheduled consumables, so a fab’s real exposure is not the cost of any single ring but the availability and consistency of the stream of rings that keep chambers in production. ESCT Fab Support supports that requirement with:
“C2” identifies the consumable’s position within the TEL cathode/consumable stack, and “2.6T” denotes the nominal thickness of approximately 2.6 mm. Both matter because the ring’s position and height determine how the plasma sheath is shaped at the wafer edge.
No. ES7099-011 is supplied as a second-source, new component manufactured to be compatible with TEL OEM P/N 3D10-201448-21K1 and verified to its form, fit and function. It is not an original TEL OEM part and is not sold as one.
Service life depends on the etch chemistry, power and duty cycle, so it is tracked in RF hours or wafer count rather than a fixed calendar interval. The ring is retired once erosion thins it enough to shift edge results or when inspection reveals cracking, chipping or excessive surface roughening.
The usual indicators are drift in edge etch rate and critical dimensions on monitor wafers, rising particle counts, and visible thinning or rounding of the inner top edge during PM inspection. Most fabs set an RF-hour limit and confirm it against measured edge performance.
Yes. Because the ring controls the plasma sheath at the wafer perimeter, a worn or out-of-tolerance ring degrades edge etch uniformity and feature profiles, and can add particle defects. Edge die loss and tighter clean intervals are common symptoms of running a ring past its useful life.
The typical lead time is 4–5 weeks. Because focus rings are consumed on a planned schedule, we recommend ordering against your PM cadence and maintaining buffer stock so chamber availability is never gated by part supply.
The C2 silicon focus ring (2.6 mm) is a sacrificial, high-purity silicon consumable that shapes the plasma sheath at the wafer edge in TEL 300 mm etch chambers, protecting underlying hardware while keeping edge etch uniformity within specification. Its purity, resistivity and precise thickness make it a process-critical part whose condition is tracked closely and replaced on a planned schedule. ESCT P/N ES7099-011 provides a second-source, new alternative to TEL OEM P/N 3D10-201448-21K1, with consistent material and tolerances and a 4–5 week lead time to support reliable PM planning.
Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 3D10-201448-21K1. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.
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