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The part designated “(C2)CEL, OUTER, SH-OX, RP470-02” is the outer silicon CEL (cathode electrode) ring used in Tokyo Electron 300 mm capacitively coupled plasma etch chambers. In the TEL naming convention, “CEL” identifies a silicon electrode element forming part of the powered or grounded electrode assembly, “OUTER” places this component at the radial periphery of the electrode stack surrounding the central cathode, and “SH-OX” denotes the associated oxide (quartz) shield region with which the ring is paired in the C2 chamber configuration. Functionally, it is an annular consumable that completes the electrode surface beyond the wafer edge and helps terminate the plasma sheath in a controlled manner across the outermost millimetres of the substrate.
Within the chamber, the outer CEL ring sits concentric with the wafer and the inner cathode, bridging the gap between the active electrode area and the grounded chamber liner and quartz shield. It is directly exposed to the plasma and to ion bombardment, and it carries a portion of the RF current that returns through the electrode assembly. Because it occupies the transition zone where the uniform bulk plasma gives way to the chamber wall environment, its surface condition, electrical continuity and dimensional stability have an outsized influence on etch behaviour at the wafer edge, precisely the region where process windows are tightest and yield is most easily lost.
As a plasma-facing silicon consumable, the outer CEL ring erodes over its service life and is replaced on a planned interval. ESCT Fab Support supplies ES7099-013 as a second-source, new alternative to the TEL original, manufactured to match the form, fit and function of OEM P/N 3D10-250317-21 so that fabs can maintain edge process performance without sole-source dependence.
The outer CEL ring is an electrically active consumable, not merely a mechanical spacer. It extends the cathode electrode surface radially beyond the wafer and shapes both the electric field and the plasma sheath in the edge region, while routing RF current and managing the boundary between the powered electrode and the surrounding quartz shield and liner.
The CEL ring is fabricated from high-purity silicon selected for controlled resistivity and predictable erosion under fluorine- and bromine-bearing chemistries. Using silicon as the electrode surface keeps the ring chemically compatible with the wafer it surrounds, so material sputtered or etched from the ring does not introduce foreign-element contamination at the wafer edge. Tight control of bulk purity and resistivity keeps the ring’s electrical contribution consistent from one part to the next.
Dimensional accuracy and surface finish are as important as material grade. The ring must seat flat and concentric so that the electrode plane is continuous and the gap to the SH-OX quartz shield is held within tolerance. Variation in flatness, inner or outer diameter, or surface texture shifts the local field and changes how the plasma confines at the periphery, which in turn moves the edge etch rate.
Because the outer CEL ring governs conditions in the edge zone, its condition propagates directly into device-level results. A worn, cracked or out-of-tolerance ring is one of the most common root causes of edge-band yield loss and of drift in chamber-matching campaigns.
The dominant wear mechanism is gradual erosion of the silicon surface under continuous ion bombardment. As the ring thins, the electrode plane drops and the sheath geometry at the edge changes, slowly pushing edge etch rate and profile away from the qualified centre point until the ring reaches its replacement limit.
Silicon is brittle, and thermal cycling combined with mishandling during preventive maintenance can initiate cracks or chip the inner and outer edges. Cracks disturb the local field, can compromise the RF return path and are a direct source of particulate contamination on production wafers.
Polymer and etch by-product films accumulate on the ring and across the adjacent quartz shield. Heavy or flaking deposits raise particle counts and can create localised arcing or impedance shifts, degrading plasma stability and accelerating damage to both the ring and surrounding hardware.
Replacement is a routine preventive-maintenance task but demands care, because the ring is brittle, electrically critical and a potential particle source. The following sequence reflects good practice for TEL etch chambers; always defer to the specific tool’s maintenance procedure and ESD controls.
Edge electrode consumables are replaced on a fixed cadence, so reliable supply and consistent quality matter more than for one-off spares. Sourcing ES7099-013 through ESCT Fab Support gives fabs a qualified second source that protects edge yield and tool uptime while easing the cost and lead-time pressure of single-vendor procurement.
It is the outer silicon CEL electrode ring. It extends the cathode surface beyond the wafer edge, shapes the plasma sheath and electric field in the peripheral zone, provides part of the RF return path and forms the controlled interface with the SH-OX quartz shield, all of which set edge etch uniformity and plasma confinement.
No. ES7099-013 is a second-source, new part. It is not an original OEM component, but it is manufactured to match OEM P/N 3D10-250317-21 in form, fit and function as a compatible replacement.
It is high-purity silicon with controlled resistivity, chosen for plasma compatibility with the silicon wafer it surrounds and for predictable, repeatable erosion behaviour as a sacrificial electrode surface.
Replace it at the wafer-count or hours interval set by your PM plan, or sooner if you see rising edge non-uniformity, increased particles, visible thinning, cracking or chipping, or instability in the RF match. Trending these indicators avoids surprise yield excursions.
Light cleaning to remove deposits may be part of routine PM, but the silicon itself is consumed by erosion and cannot be restored. Once the ring is thinned, cracked or out of tolerance it must be replaced to keep edge performance within the qualified window.
The current lead time is 4-5 weeks. Because this is a scheduled consumable, we recommend staging PM stock in advance and ordering against your replacement cadence to avoid tool downtime.
The outer CEL silicon electrode ring (ESCT P/N ES7099-013, matching OEM P/N 3D10-250317-21) is an electrically active, plasma-facing consumable for TEL 300 mm capacitively coupled etch chambers in the C2 / SH-OX shield configuration. It completes the cathode electrode beyond the wafer edge, shapes the sheath and field, carries RF return current and interfaces with the quartz shield, making it a key determinant of edge etch uniformity, particle performance and chamber matching. Supplied as a new second-source part built to OEM form, fit and function, ES7099-013 gives fabs a dependable, cost-effective option for keeping etch tools qualified and productive.
Disclaimer: This part is supplied by ESCT Fab Support as a new, OEM-compatible second-source component, verified to the form, fit and function of Tokyo Electron part number 3D10-250317-21. It is not an original OEM part and is not sold as one. It is not manufactured by, endorsed by, or affiliated with Tokyo Electron, and all manufacturer names and part numbers are quoted for identification and compatibility purposes only.
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